scholarly journals Effect of Deposition Parameters on Kinematics Growth and Optical Properties of PbS Nano Films Deposited by Chemical Bath Deposition

2014 ◽  
Vol 34 ◽  
pp. 1-10 ◽  
Author(s):  
Ali M. Mousa ◽  
Slma M. Hassen ◽  
S. Mohmoed
Keyword(s):  
Growth Rate ◽  
Optical Properties ◽  
Energy Range ◽  
Band Gap ◽  
Chemical Bath Deposition ◽  
Deposition Time ◽  
Ph Value ◽  
Bath Temperature ◽  
Synthesis Conditions ◽  
Deposition Parameters

The paper presents a study regarding the kinetic of chemical bath deposition (CBD) PbS nano films. Nano films were deposited from chemical bath containing thiourea, lead nitrite, and ammonia. The deposition kinematics and optical investigations have been performed to compare the properties of the films grown with different precursor solutions. We are able to determine the growth rate as a function of the synthesis conditions and it was found that the growth rate of deposited nano layer affected significantly by synthesis conditions. The main characteristic of nano films is the band gap. This parameter determined from spectroscopy Measurements of transmission, in the energy range of 240-840 nm is influenced by many factors such as deposition time, bath temperature, pH value of the path and molar concentration of the reactants.

Properties of CdS Thin Films Grown by Chemical Bath Deposition as a Function of Bath Temperature

2009 ◽  
Vol 609 ◽  
pp. 243-247 ◽  
Author(s):  
H. Moualkia ◽  
S. Hariech ◽  
M.S. Aida
Keyword(s):  
Thin Films ◽  
Optical Properties ◽  
Band Gap ◽  
Chemical Bath Deposition ◽  
Bath Temperature ◽  
Band Gap Energy ◽  
X Ray Diffraction ◽  
Glass Substrates ◽  
Cds Thin Films ◽  
Direct Band

The present work deals with the preparation and characterization of cadmium sulfur (CdS) thin films. These films are prepared by chemical bath deposition on the well cleaned glass substrates. The thickness of the samples was measured by using profilometer DEKTAK, structural and optical properties were studied by X-ray diffraction analysis, and UV-visible spectrophotometry. The optical properties of the films have been investigated as a function of temperature. The band gap energy and Urbach energy were also investigated as a function of temperature. From the transmittance data analysis the direct band gap ranges from 2.21 eV to 2.34 eV. A dependence of band gap on temperature has been observed and the possible raisons are discussed. Transmission spectra indicates a high transmission coefficient (75 %). Structural analysis revealed that the films showed cubic structure, and the crystallite size decreased at a higher deposition temperature.

Deposition time dependent study of structural and optical properties of PbS thin films grown by CBD method

2020 ◽  
Vol 13 ◽  
Author(s):  
Minakshi Chaudhary ◽  
Yogesh Hase ◽  
Ashwini Punde ◽  
Pratibha Shinde ◽  
Ashish Waghmare ◽  
...  
Keyword(s):  
Thin Films ◽  
Optical Properties ◽  
Band Gap ◽  
Deposition Time ◽  
Secondary Growth ◽  
Cost Effective ◽  
Xrd Analysis ◽  
Structural Morphology ◽  
Glass Substrates ◽  
Cbd Method

: Thin films of PbS were prepared onto glass substrates by using a simple and cost effective CBD method. Influence of deposition time on structural, morphology and optical properties have been investigated systematically. The XRD analysis revealed that PbS films are polycrystalline with preferred orientation in (200) direction. Enhancement in crystallinity and PbS crystallite size has been observed with increase in deposition time. Formation of single phase PbS thin films has been further confirmed by Raman spectroscopy. The surface morphology analysis revealed the formation of prismatic and pebble-like PbS particles and with increase in deposition time these PbS particles are separated from each other without secondary growth. The data obtained from the EDX spectra shows the formation of high-quality but slightly sulfur rich PbS thin films over the entire range of deposition time studied. All films show increase in absorption with increase in deposition time and a strong absorption in the visible and sub-band gap regime of NIR range of the spectrum with red shift in band edge. The optical band gap shows decreasing trend, as deposition time increases but it is higher than the band gap of bulk PbS.

scholarly journals Influence of Bath Temperature on Structural, Optical and Electrical Properties of Cadmium Sulfi de Thin Films Prepared by Chemical Bath Deposition

2019 ◽  
Vol 21 (4) ◽  
pp. 490-497
Author(s):  
Mikhail V. Gapanovich ◽  
Natalia A. Tikhonina ◽  
Tatiana S. Kokovina ◽  
Dmitry N. Varseev ◽  
Vladimir V. Rakitin ◽  
...  
Keyword(s):  
New York ◽  
Band Gap ◽  
Chemical Bath Deposition ◽  
Deposition Temperature ◽  
Chemical Deposition ◽  
Bath Temperature ◽  
Thin Solid Films ◽  
Solid Films ◽  
Energy Mater

Abstract. The effect of bath temperature (60-90 °C) on structural, optical and electrical propertiesof CdS thin films deposited by chemical bath deposition (CBD) at a constant precursorconcentration and deposition time was studied. From the XRD analysis, it was found that thestructure of CdS thin fi lms varied with temperature. At lower temperature hexagonal structurewas dominated while at high temperature, the cubic structure was prominent. The band gap ofthe as-prepared CdS thin fi lms was calculated from the UV-Vis spectroscopic data, and it wasfound to be decreased with the increase of temperature. The resistivity of the CdS thin fi lms alsodecreased with the increase in temperature.       REFERENCES1. Kumar S., Sharma P., Sharma V. CdS nanofi lms: effect of deposition temperature on morphology andoptical band gap. Physica Scripta, 2013, v. 88(4), p. 045603. DOI: https://doi.org/10.1088/0031-8949/88/04/0456032. Rondiyaa S., Rokadea A., Gabhalea B., Pandharkara S., Chaudharia M., Dateb A., et al. Effectof bath temperature on optical and morphology properties of CdS thin fi lms grown by chemical bathdeposition. Energy Procedia, 2017, v. 110, pp. 202–209. DOI: https://doi.org/10.1016/j.egypro.2017.03.1283. Fangyang Liu, Yanqing Lai, Jun Liu, Bo Wang, Sanshuang Kuang, Zhian Zhang, et al. Characterizationof chemical bath deposited CdS thin fi lms at different deposition temperature. J. Alloys Compd., 2010,v. 493(1–2), pp. 305–308. DOI: https://doi.org/10.1016/j.jallcom.2009.12.0884. Hariech S., Aida M. S., Bougdira J., Belmahi M., Medjahdi G., Genиve D., et al. Cadmium sulfi de thinfi lms growth by chemical bath deposition. J. Semicond., 2018, v. 39(3), p. 034004. DOI: https://doi.org/10.1088/1674-4926/39/3/0340045. Mane R. S., Lokhande C. D. Chemical deposition method for metal chalcogenide thin fi lms. J. Mater.Chem. Phys., 2000, v. 65(1), p. 1–31. DOI: https://doi.org/10.1016/s0254-0584(00)00217-06. Hodes G. Chemical solution deposition of semiconductor fi lms. Monograph, Boca Raton, CRCPress, 2002, 388 p. DOI: https://doi.org/10.1201/97802039090967. George P. J., Sanchez-Juarez A., Nair P. K. Modifi cation of electrical, optical and crystalline propertiesof chemically deposited CdS fi lms by thermal diffusion of indium and tin. Semicond. Sci. Technol., 1996, v.11(7), pp. 1090–1095. DOI: https://doi.org/10.1088/0268-1242/11/7/0218. Oliva A. I., Solis-Canto O., Castro-Rodriguez R., Quintana P. Formation of the band gap energy on CdSthin fi lms growth by two different techniques Thin Solid Films, 2001, v. 391(1), pp. 28–35. DOI: https://doi.org/10.1016/s0040-6090(01)00830-69. Lejmi N., Savadogo O. The effect of heteropolyacids and isopolyacids on the properties ofchemically bath deposited CdS thin fi lms. Sol. Energy Mater. Sol. Cells, 2001, v. 70(1), pp. 71–83. DOI: https://doi.org/10.1016/s0927-0248(00)00412-810. Gray D.E. American Institute of Physics Handbook. 3rd Edition, McGraw-Hill, New York, pp. 4–58.11. Ravi Kant Choubey, Dipti Desai, Kale S. N., Sunil Kumar. Effect of annealing treatment anddeposition temperature on CdS thin fi lms for CIGS solar cells applications. J. Mater. Sci: Mater. in Elec.,2016, v. 27(8), pp. 7890–7898. DOI: https://doi.org/10.1007/s10854-016-4780-212. Lo Y. S., Choubey R. K., Yu W. C., Hsu W. T., Lan C. W. Shallow bath chemical deposition of CdSthin fi lm. Thin Solid Films, 2011, v. 520(1), pp. 217-223. DOI: https://doi.org/10.1016/j.tsf.2011.07.03513. Cortes A., Gomez H., Marotti R. E., Riveros G., Dalchiele E. A. Grain size dependence of the bandgapin chemical bath deposited CdS thin fi lms. Sol. Energy Mater. Sol. Cells, 2004, v. 82(1-2), pp. 21–34. DOI:https://doi.org/10.1016/j.solmat.2004.01.002 14. Ahmad F. R., Yakimov A., Davis R. J., Her J. H., Cournoyer J. R., Ayensu N. M. Effect of thermal annealingon the properties of cadmium sulfi de deposited via chemical bath deposition. Thin Solid Films, 2013,v. 535, pp. 166–170. DOI: https://doi.org/10.1016/j.tsf.2012.10.08515. Rakhshani A. E., Al-Azab A. S. Characterization of CdS fi lms prepared by chemical-bath deposition.J. Phys. Condens. Matter., 2000, v. 12, pp. 8745–8756. DOI: https://doi.org/10.1088/0953-8984/12/40/31616. Al Kuhaimi S. A. // Vacuum, 1998, v. 51, pp. 349–55.17. Zelaya-Angel O., Alvarado-Gil J. J., Lozada-Morales R., Vargas H., Ferreira da Silva A. Band-gapshift in CdS semiconductor by photoacoustic spectroscopy: Evidence of a cubic to hexagonal lattice transition.Appl. Phys. Lett., 1994, v. 64(3), pp. 291–293. DOI: https://doi.org/10.1063/1.11118418. Chopra K. L. Thin Film Phenomena. McGraw-Hill, New York, 1969, 266 p.19. Pattabi M., Uchil J. Synthesis of cadmium sulphide nanoparticles. Sol. Energy Mater. Sol. Cells, 2000,v. 63(4), pp. 309–314. DOI: https://doi.org/10.1016/s0927-0248(00)00050-720. Hani Khallaf, Isaiah O. Oladeji, Guangyu Chai, Lee Chow. Characterization of CdS thin fi lms grown bychemical bath deposition using four different cadmium sources. Thin Solid Films, 2008, v. 516(21), pp. 7306–7312. DOI: https://doi.org/10.1016/j.tsf.2008.01.00421. Sasikala G., Thilakan P., Subramanian C. Modifi cation in the chemical bath deposition apparatus,growth and characterization of CdS semiconducting thin fi lms for photovoltaic applications. Sol. Ener gyMater. Sol. Cells, 2000, v. 62(3), pp. 275–293. DOI: https://doi.org/10.1016/s0927-0248(99)00170-122. Toma A., Vigil O., Alvarado-Gil J. J., Lozada-Morales R., Zelaya-Angel O., Vargas H., et al. Infl uenceof thermal annealings in different atmospheres on the band-gap shift and resistivity of CdS thin fi lms. J. Appl.Phys., 1995, v. 78(4), p. 2204–2207. DOI: https://doi.org/10.1063/1.360136

Structural and optical properties of delafossite-type CuAlO2 thin films prepared by RF reactive sputtering

2005 ◽  
Vol 905 ◽  
Author(s):  
B. Yang ◽  
Y. M. Lu ◽  
C. Neumann ◽  
A. Polity ◽  
C. Z. Wang ◽  
...  
Keyword(s):  
Thin Films ◽  
Optical Properties ◽  
Band Gap ◽  
Reactive Sputtering ◽  
Wavelength Dependence ◽  
X Ray Diffraction ◽  
Structural And Optical Properties ◽  
Deposition Parameters ◽  
Delafossite Structure ◽  
Average Transmittance

AbstractDelafossite-type CuAlO2 thin films have been deposited by radio frequency (RF) reactive sputtering on sapphire using a CuAlO2 ceramic target. A study of structural and optical properties was performed on films of varying deposition parameters such as substrate temperature and oxygen partial pressure and also post annealing. The crystalline phase in the films was identified to be the delafossite structure by x-ray diffraction. The optical properties, such as the wavelength dependence of the transmittance and the band gap, were determined. The average transmittance is 80% in the wavelength range of 400-1500 nm and the band gap is 3.81 eV.

scholarly journals Properties of Tin Monosulphide Films Grown by Chemical Bath Deposition

2013 ◽  
Vol 2013 ◽  
pp. 1-5 ◽  
Author(s):  
Gedi Sreedevi ◽  
Kotte Tulasi Ramakrishna Reddy
Keyword(s):  
Band Gap ◽  
Chemical Bath Deposition ◽  
Structural Parameters ◽  
Bath Temperature ◽  
Optical Absorption Coefficient ◽  
Complexing Agent ◽  
Secondary Phases ◽  
Orthorhombic Crystal Structure ◽  
X Ray ◽  
Tin Chloride

Tin monosulphide (SnS) films have been successfully grown by a simple and low-cost wet chemical process, chemical bath deposition (CBD), using tin chloride and thioacetamide as precursors and tartaric acid as complexing agent. The layers were grown on glass substrate at different bath temperatures (Tb) that varied in the range 50–70°C. The energy dispersive X-ray analysis (EDAX) studies showed that all the grown films were nearly stoichiometric. The X-ray diffraction analysis indicated that the films had an intense peak at 31.6° that corresponds to the (111) plane of SnS and exhibited orthorhombic crystal structure. The intensity of (111) plane increases with the increase in bath temperature and became sharp at Tb=70°C, where the other crystal planes got suppressed, this indicates better crystallinity of the layers grown at this temperature. No other secondary phases of tin sulphide were observed. The structural parameters such as lattice constants and crystallite size were also calculated. The optical studies revealed that the layers had high optical absorption coefficient (>104 cm−1). The energy band gap was found to be allowed and direct and varied between 1.30 eV and 1.35 eV. The band gap decreased with the rise in bath temperature. The refractive index and the extinction coefficient were also evaluated. The details of these results will be presented and discussed.

Effect of bath temperature on the chemical bath deposition of PbSe thin films

1970 ◽  
Vol 6 (2) ◽  
pp. 126-132 ◽  
Author(s):  
Anuar Kassim ◽  
Tan Wee Tee ◽  
Ho Soon Min ◽  
Shanthi Monohorn ◽  
Saravanan Nagalingam
Keyword(s):  
Thin Films ◽  
Band Gap ◽  
Chemical Bath Deposition ◽  
Lead Nitrate ◽  
Bath Temperature ◽  
Band Gap Energy ◽  
Sodium Selenate ◽  
X Ray Diffraction ◽  
X Ray ◽  
Gap Energy

PbSe thin films are prepared by chemical bath deposition technique over microscope glass substrates from an aqueous acidic bath containing lead nitrate and sodium selenate. The influence of bath temperature on the properties of PbSe film is investigated. The X-ray diffraction analysis showed the deposited films were polycrystalline and having the (111) orientation. The surface morphology study revealed that the grains have cubic shape crystal. The band gap energy was decreased from 2.0 to 1.3 eV as the bath temperature was increased from 40 to 80°C. The films deposited at 80°C showed good crystallinity and uniformly distributed over the surface of substrate with larger grain sizes. Therefore, the optimum bath temperature is 80°C. Keywords: Lead selenide; X-ray diffraction; Band gap energy; Chemical bath deposition; Thin films DOI: 10.3126/kuset.v6i2.4021Kathmandu University Journal of Science, Engineering and Technology Vol.6. No II, November, 2010, pp.126-132

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