scholarly journals Properties of Tin Monosulphide Films Grown by Chemical Bath Deposition

2013 ◽  
Vol 2013 ◽  
pp. 1-5 ◽  
Author(s):  
Gedi Sreedevi ◽  
Kotte Tulasi Ramakrishna Reddy
Keyword(s):  
Band Gap ◽  
Chemical Bath Deposition ◽  
Structural Parameters ◽  
Bath Temperature ◽  
Optical Absorption Coefficient ◽  
Complexing Agent ◽  
Secondary Phases ◽  
Orthorhombic Crystal Structure ◽  
X Ray ◽  
Tin Chloride

Tin monosulphide (SnS) films have been successfully grown by a simple and low-cost wet chemical process, chemical bath deposition (CBD), using tin chloride and thioacetamide as precursors and tartaric acid as complexing agent. The layers were grown on glass substrate at different bath temperatures (Tb) that varied in the range 50–70°C. The energy dispersive X-ray analysis (EDAX) studies showed that all the grown films were nearly stoichiometric. The X-ray diffraction analysis indicated that the films had an intense peak at 31.6° that corresponds to the (111) plane of SnS and exhibited orthorhombic crystal structure. The intensity of (111) plane increases with the increase in bath temperature and became sharp at Tb=70°C, where the other crystal planes got suppressed, this indicates better crystallinity of the layers grown at this temperature. No other secondary phases of tin sulphide were observed. The structural parameters such as lattice constants and crystallite size were also calculated. The optical studies revealed that the layers had high optical absorption coefficient (>104 cm−1). The energy band gap was found to be allowed and direct and varied between 1.30 eV and 1.35 eV. The band gap decreased with the rise in bath temperature. The refractive index and the extinction coefficient were also evaluated. The details of these results will be presented and discussed.

Effect of bath temperature on the chemical bath deposition of PbSe thin films

1970 ◽  
Vol 6 (2) ◽  
pp. 126-132 ◽  
Author(s):  
Anuar Kassim ◽  
Tan Wee Tee ◽  
Ho Soon Min ◽  
Shanthi Monohorn ◽  
Saravanan Nagalingam
Keyword(s):  
Thin Films ◽  
Band Gap ◽  
Chemical Bath Deposition ◽  
Lead Nitrate ◽  
Bath Temperature ◽  
Band Gap Energy ◽  
Sodium Selenate ◽  
X Ray Diffraction ◽  
X Ray ◽  
Gap Energy

PbSe thin films are prepared by chemical bath deposition technique over microscope glass substrates from an aqueous acidic bath containing lead nitrate and sodium selenate. The influence of bath temperature on the properties of PbSe film is investigated. The X-ray diffraction analysis showed the deposited films were polycrystalline and having the (111) orientation. The surface morphology study revealed that the grains have cubic shape crystal. The band gap energy was decreased from 2.0 to 1.3 eV as the bath temperature was increased from 40 to 80°C. The films deposited at 80°C showed good crystallinity and uniformly distributed over the surface of substrate with larger grain sizes. Therefore, the optimum bath temperature is 80°C. Keywords: Lead selenide; X-ray diffraction; Band gap energy; Chemical bath deposition; Thin films DOI: 10.3126/kuset.v6i2.4021Kathmandu University Journal of Science, Engineering and Technology Vol.6. No II, November, 2010, pp.126-132

scholarly journals Influence of Bath Temperature on Structural, Optical and Electrical Properties of Cadmium Sulfi de Thin Films Prepared by Chemical Bath Deposition

2019 ◽  
Vol 21 (4) ◽  
pp. 490-497
Author(s):  
Mikhail V. Gapanovich ◽  
Natalia A. Tikhonina ◽  
Tatiana S. Kokovina ◽  
Dmitry N. Varseev ◽  
Vladimir V. Rakitin ◽  
...  
Keyword(s):  
New York ◽  
Band Gap ◽  
Chemical Bath Deposition ◽  
Deposition Temperature ◽  
Chemical Deposition ◽  
Bath Temperature ◽  
Thin Solid Films ◽  
Solid Films ◽  
Energy Mater

Abstract. The effect of bath temperature (60-90 °C) on structural, optical and electrical propertiesof CdS thin films deposited by chemical bath deposition (CBD) at a constant precursorconcentration and deposition time was studied. From the XRD analysis, it was found that thestructure of CdS thin fi lms varied with temperature. At lower temperature hexagonal structurewas dominated while at high temperature, the cubic structure was prominent. The band gap ofthe as-prepared CdS thin fi lms was calculated from the UV-Vis spectroscopic data, and it wasfound to be decreased with the increase of temperature. The resistivity of the CdS thin fi lms alsodecreased with the increase in temperature.       REFERENCES1. Kumar S., Sharma P., Sharma V. CdS nanofi lms: effect of deposition temperature on morphology andoptical band gap. Physica Scripta, 2013, v. 88(4), p. 045603. DOI: https://doi.org/10.1088/0031-8949/88/04/0456032. Rondiyaa S., Rokadea A., Gabhalea B., Pandharkara S., Chaudharia M., Dateb A., et al. Effectof bath temperature on optical and morphology properties of CdS thin fi lms grown by chemical bathdeposition. Energy Procedia, 2017, v. 110, pp. 202–209. DOI: https://doi.org/10.1016/j.egypro.2017.03.1283. Fangyang Liu, Yanqing Lai, Jun Liu, Bo Wang, Sanshuang Kuang, Zhian Zhang, et al. Characterizationof chemical bath deposited CdS thin fi lms at different deposition temperature. J. Alloys Compd., 2010,v. 493(1–2), pp. 305–308. DOI: https://doi.org/10.1016/j.jallcom.2009.12.0884. Hariech S., Aida M. S., Bougdira J., Belmahi M., Medjahdi G., Genиve D., et al. Cadmium sulfi de thinfi lms growth by chemical bath deposition. J. Semicond., 2018, v. 39(3), p. 034004. DOI: https://doi.org/10.1088/1674-4926/39/3/0340045. Mane R. S., Lokhande C. D. Chemical deposition method for metal chalcogenide thin fi lms. J. Mater.Chem. Phys., 2000, v. 65(1), p. 1–31. DOI: https://doi.org/10.1016/s0254-0584(00)00217-06. Hodes G. Chemical solution deposition of semiconductor fi lms. Monograph, Boca Raton, CRCPress, 2002, 388 p. DOI: https://doi.org/10.1201/97802039090967. George P. J., Sanchez-Juarez A., Nair P. K. Modifi cation of electrical, optical and crystalline propertiesof chemically deposited CdS fi lms by thermal diffusion of indium and tin. Semicond. Sci. Technol., 1996, v.11(7), pp. 1090–1095. DOI: https://doi.org/10.1088/0268-1242/11/7/0218. Oliva A. I., Solis-Canto O., Castro-Rodriguez R., Quintana P. Formation of the band gap energy on CdSthin fi lms growth by two different techniques Thin Solid Films, 2001, v. 391(1), pp. 28–35. DOI: https://doi.org/10.1016/s0040-6090(01)00830-69. Lejmi N., Savadogo O. The effect of heteropolyacids and isopolyacids on the properties ofchemically bath deposited CdS thin fi lms. Sol. Energy Mater. Sol. Cells, 2001, v. 70(1), pp. 71–83. DOI: https://doi.org/10.1016/s0927-0248(00)00412-810. Gray D.E. American Institute of Physics Handbook. 3rd Edition, McGraw-Hill, New York, pp. 4–58.11. Ravi Kant Choubey, Dipti Desai, Kale S. N., Sunil Kumar. Effect of annealing treatment anddeposition temperature on CdS thin fi lms for CIGS solar cells applications. J. Mater. Sci: Mater. in Elec.,2016, v. 27(8), pp. 7890–7898. DOI: https://doi.org/10.1007/s10854-016-4780-212. Lo Y. S., Choubey R. K., Yu W. C., Hsu W. T., Lan C. W. Shallow bath chemical deposition of CdSthin fi lm. Thin Solid Films, 2011, v. 520(1), pp. 217-223. DOI: https://doi.org/10.1016/j.tsf.2011.07.03513. Cortes A., Gomez H., Marotti R. E., Riveros G., Dalchiele E. A. Grain size dependence of the bandgapin chemical bath deposited CdS thin fi lms. Sol. Energy Mater. Sol. Cells, 2004, v. 82(1-2), pp. 21–34. DOI:https://doi.org/10.1016/j.solmat.2004.01.002 14. Ahmad F. R., Yakimov A., Davis R. J., Her J. H., Cournoyer J. R., Ayensu N. M. Effect of thermal annealingon the properties of cadmium sulfi de deposited via chemical bath deposition. Thin Solid Films, 2013,v. 535, pp. 166–170. DOI: https://doi.org/10.1016/j.tsf.2012.10.08515. Rakhshani A. E., Al-Azab A. S. Characterization of CdS fi lms prepared by chemical-bath deposition.J. Phys. Condens. Matter., 2000, v. 12, pp. 8745–8756. DOI: https://doi.org/10.1088/0953-8984/12/40/31616. Al Kuhaimi S. A. // Vacuum, 1998, v. 51, pp. 349–55.17. Zelaya-Angel O., Alvarado-Gil J. J., Lozada-Morales R., Vargas H., Ferreira da Silva A. Band-gapshift in CdS semiconductor by photoacoustic spectroscopy: Evidence of a cubic to hexagonal lattice transition.Appl. Phys. Lett., 1994, v. 64(3), pp. 291–293. DOI: https://doi.org/10.1063/1.11118418. Chopra K. L. Thin Film Phenomena. McGraw-Hill, New York, 1969, 266 p.19. Pattabi M., Uchil J. Synthesis of cadmium sulphide nanoparticles. Sol. Energy Mater. Sol. Cells, 2000,v. 63(4), pp. 309–314. DOI: https://doi.org/10.1016/s0927-0248(00)00050-720. Hani Khallaf, Isaiah O. Oladeji, Guangyu Chai, Lee Chow. Characterization of CdS thin fi lms grown bychemical bath deposition using four different cadmium sources. Thin Solid Films, 2008, v. 516(21), pp. 7306–7312. DOI: https://doi.org/10.1016/j.tsf.2008.01.00421. Sasikala G., Thilakan P., Subramanian C. Modifi cation in the chemical bath deposition apparatus,growth and characterization of CdS semiconducting thin fi lms for photovoltaic applications. Sol. Ener gyMater. Sol. Cells, 2000, v. 62(3), pp. 275–293. DOI: https://doi.org/10.1016/s0927-0248(99)00170-122. Toma A., Vigil O., Alvarado-Gil J. J., Lozada-Morales R., Zelaya-Angel O., Vargas H., et al. Infl uenceof thermal annealings in different atmospheres on the band-gap shift and resistivity of CdS thin fi lms. J. Appl.Phys., 1995, v. 78(4), p. 2204–2207. DOI: https://doi.org/10.1063/1.360136

Effect of Molarity on Structural and Optical Properties of Chemically Deposited Nanocrystalline PbS Thin Film

2017 ◽  
Vol 74 ◽  
pp. 22-35 ◽  
Author(s):  
Manash Pratim Sarma ◽  
G. Wary
Keyword(s):  
Thin Films ◽  
Ph Value ◽  
Bath Temperature ◽  
Ion Source ◽  
Complexing Agent ◽  
X Ray ◽  
Force Microscopy ◽  
Nanocrystallite Size ◽  
Atomic Force ◽  
Cbd Method

Thin films of PbS were deposited by chemical bath deposition (CBD) method under various molarities using lead acetate as Pb2+ ion source, thiourea as S2- ion source and ammonia as complexing agent at a fixed pH value of 9 under bath temperature of 333 K. Four different molarities of PbS thin films were prepared. The as-prepared films were characterized by using X-ray diffraction (XRD), X-ray fluorescence (XRF), EDX, field emission scanning electron microscopy (FESEM) and atomic force microscopy (AFM). Parameters like crystallite size, lattice constant, microstrain, dislocation density were calculated. Optical constants such as extinction coefficient, absorption coefficient were measured from absorption spectra. Studies show that average nanocrystallite size increases from14.2 nm to 18.1 nm as the molarity of the film increases. Optical studies reveal the decrease of band gap from 1.75 eV to 1.44 eV with increasing molarity of the film indicating higher electrical conductivity of the films.

Properties of CdS Thin Films Grown by Chemical Bath Deposition as a Function of Bath Temperature

2009 ◽  
Vol 609 ◽  
pp. 243-247 ◽  
Author(s):  
H. Moualkia ◽  
S. Hariech ◽  
M.S. Aida
Keyword(s):  
Thin Films ◽  
Optical Properties ◽  
Band Gap ◽  
Chemical Bath Deposition ◽  
Bath Temperature ◽  
Band Gap Energy ◽  
X Ray Diffraction ◽  
Glass Substrates ◽  
Cds Thin Films ◽  
Direct Band

The present work deals with the preparation and characterization of cadmium sulfur (CdS) thin films. These films are prepared by chemical bath deposition on the well cleaned glass substrates. The thickness of the samples was measured by using profilometer DEKTAK, structural and optical properties were studied by X-ray diffraction analysis, and UV-visible spectrophotometry. The optical properties of the films have been investigated as a function of temperature. The band gap energy and Urbach energy were also investigated as a function of temperature. From the transmittance data analysis the direct band gap ranges from 2.21 eV to 2.34 eV. A dependence of band gap on temperature has been observed and the possible raisons are discussed. Transmission spectra indicates a high transmission coefficient (75 %). Structural analysis revealed that the films showed cubic structure, and the crystallite size decreased at a higher deposition temperature.

scholarly journals Growth of Polycrystalline In2S3 Thin Films by Chemical Bath Deposition Using Acetic Acid as a Complexing Agent for Solar Cell Application

2013 ◽  
Vol 2013 ◽  
pp. 1-6 ◽  
Author(s):  
G. R. Gopinath ◽  
K. T. Ramakrishna Reddy
Keyword(s):  
Acetic Acid ◽  
Solar Cell ◽  
Chemical Bath Deposition ◽  
Visible Region ◽  
Optical Transmittance ◽  
Xrd Analysis ◽  
Complexing Agent ◽  
Solar Cell Application ◽  
X Ray ◽  
Glass Substrates

In2S3 films have been successfully deposited on Corning glass substrates via chemical bath deposition (CBD) method using acetic acid as a novel complexing agent. The layers were grown by employing synthesis using indium sulphate and thioacetamide (TA) as precursors by varying TA concentration in the range of 0.1–0.5 M, keeping other deposition parameters constant. Energy dispersive X-ray analysis (EDAX) revealed an increase of S/In ratio in the films with the increase of TA concentration in the solution. The X-ray diffraction (XRD) analysis indicated a change in preferred orientation from (311) plane related to cubic structure to the (103) direction corresponding to the tetragonal crystal structure. The evaluated crystallite size varied in the range of 15–25 nm with the increase of TA concentration. Morphological analysis showed that the granular structure and the granular density decrease with the raise of TA concentration. The optical properties of the layers were also investigated using UV-Vis-NIR analysis, which indicated that all the In2S3 films had the optical transmittance >60% in the visible region, and the evaluated energy band varied in the range of 2.87–3.32 eV with the change of TA concentration. Further, a thin film heterojunction solar cell was fabricated using a novel absorber layer, SnS, with In2S3 as a buffer. The unoptimized SnS/In2S3/ZnO:Al solar cell showed a conversion efficiency of 0.6%.

STRUCTURAL PARAMETERS AND OPTICAL CONSTANTS OF CdS NANOCRYSTALLINE THIN FILMS

NANO ◽  
2011 ◽  
Vol 06 (03) ◽  
pp. 251-258 ◽  
Author(s):  
B. VISWANATHAN ◽  
J. DHARMARAJA ◽  
J. BALAMURUGAN
Keyword(s):  
Electron Microscopy ◽  
Thin Films ◽  
Band Gap ◽  
Crystallite Size ◽  
Optical Conductivity ◽  
Optical Constants ◽  
Optical Band Gap ◽  
Structural Parameters ◽  
Stoichiometric Composition ◽  
Bath Temperature

Optical constants of cadmium sulfide (CdS) thin films were determined in the spectral range of 400–1200 nm from optical absorption and transmittance measurements for different bath temperatures. X-ray diffraction (XRD), field emission scanning electron microscopy (FESEM), and transmission electron microscopy (TEM) were the techniques used to determine the crystallite structure and morphology of the films. EDX images showed that a sample had a stoichiometric composition. The crystallite size and microstrain were calculated using the Williamson–Hall method. The optical band gap values of the films varied from 2.35 eV to 2.5 eV, depending on the bath temperature. Optical study was performed to calculate the refractive index (n), extinction coefficient (k), optical conductivity (σ), dielectric constant (real and imaginary), and optical band gap using transmission spectra. It has been observed that the conductivity of the synthesized films has a close relationship with the size of the crystallites. The optical conductivity and the crystallite size increase at a temperature of up to 70°C and then start decreasing when the temperature is still increased due to the change in phase from hexagonal to cubic in nature. Moreover, we observed that beyond this temperature the XRD peak shifts toward the nanoregion. The values of microstructure parameters change drastically, whereas the trend of optical constants remains the same.

scholarly journals Effect of deposition temperature on the structural and optical properties of chemically prepared nanocrystalline lead selenide thin films

2012 ◽  
Vol 3 ◽  
pp. 438-443 ◽  
Author(s):  
Anayara Begum ◽  
Amir Hussain ◽  
Atowar Rahman
Keyword(s):  
Thin Films ◽  
Dislocation Density ◽  
Optical Absorption ◽  
Crystallite Size ◽  
Lattice Constant ◽  
Deposition Temperature ◽  
Structural Parameters ◽  
Lead Selenide ◽  
Complexing Agent ◽  
X Ray

Nanocrystalline lead selenide (PbSe) thin films were prepared on glass substrates by a chemical bath deposition method, using sodium selenosulfate (Na2SeSO3) as a source of Se2− ions, and lead acetate as a source of Pb2+ ions. Trisodium citrate (TSC) was used as a complexing agent. PbSe films were prepared at various deposition temperatures while the pH value was kept fixed at 11, and the effect on the resulting film properties was studied by X-ray diffraction (XRD), X-ray fluorescence (XRF), scanning electron microscopy (SEM) and optical absorption studies. The structural parameters, such as the lattice constant (a), crystallite size (D), dislocation density (ρ) and microstrain (ε) were evaluated from the XRD spectra. It was found that average crystallite size, as calculated from Scherrer’s formula, increased from 23 to 33 nm as the deposition temperature was varied from 303 to 343 K. The dislocation density and microstrain were found to vary inversely with the crystallite size, whereas the lattice constant was found to increase with an increase in crystallite size. The optical absorption spectra of the nanocrystalline PbSe films showed a blue shift, and the optical band gap (E g ) was found to increase from 1.96 to 2.10 eV with the decrease in crystallite size.

scholarly journals Effect of Annealing Temperature and Time on the Optical Properties of SnS Thin Films Prepared by Chemical Bath Deposition

2013 ◽  
Vol 1 (2) ◽  
pp. 121-130
Author(s):  
J.I Onwuemeka ◽  
F.M Ezike ◽  
N.C Nwulu
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Optical Properties ◽  
Band Gap ◽  
Chemical Bath Deposition ◽  
Complexing Agent ◽  
Rutherford Back Scattering ◽  
Double Beam ◽  
Two Samples ◽  
Sns Thin Films

A research on the deposition and Characterization of SnS Thin Films by Chemical Bath Deposition Technique using Ammonia (NH3) as a complexing agent. Thin film of Tin (II) sulphide (SnS) is deposited onto glass substrates using chemical bath deposition (CBD) at room temperature for 3hours and 1hour. The optical properties of the film were measured using Double Beam UV- Spectrophotometer with serial number UV061514, Energy dispersive X-ray florescence (EDXRF) determines the compositions together with Rutherford Back Scattering (RBS) analysis revealed that thin films have percentage compositions of the elements (Sn/S, 50.1/49.9 for 3hours and Sn/S, 50.4/49.6 for 1hour) and their thicknesses are 100nm for 3hours and 150nm for 1hour. It was found that SnS thin film exhibits p-type conduction. Optical band gap values of direct and indirect transitions are estimated to be 1.98eV to 2.01eV and 1.82eV to 1.98eV for the two samples respectively. The other optical properties calculated from transmittance using appropriate equations are absorbance, reflectance, band gap , absorption coefficient, optical conductivity, refractive index and extinction coefficient.

scholarly journals Effect of Graphene Nanoparticles Addition on Superconductivity of YBa2Cu3O7~δ Synthesized via the Thermal Treatment Method

Coatings ◽  
2022 ◽  
Vol 12 (1) ◽  
pp. 91
Author(s):  
Aliah Nursyahirah Kamarudin ◽  
Mohd Mustafa Awang Kechik ◽  
Siti Nabilah Abdullah ◽  
Hussein Baqiah ◽  
Soo Kien Chen ◽  
...  
Keyword(s):  
Thermal Treatment ◽  
Low Cost ◽  
Treatment Method ◽  
Industrial Applications ◽  
Secondary Phases ◽  
Orthorhombic Crystal ◽  
Orthorhombic Crystal Structure ◽  
X Ray ◽  
Average Grain Size ◽  
Graphene Nanoparticles

The development of high-temperature superconductor (HTS) YBa2Cu3O7~δ (Y123) bulks in industrial applications were established years ago. It is one of the developments that currently attracts great attention especially in transportation, superconductor cables and wires. This study is focused on the preparation of the Y123 bulk superconductors by the thermal treatment method due to the promising ways to develop high-quality Y123 superconductors with its simplicity, low cost, and relatively low reaction temperature used during the process. Y123 were added with graphene nanoparticles (x = (0.0–1.0) wt.%). Samples were then characterized by X-ray diffraction (XRD) analysis, field-emission scanning electron microscopy (FESEM), energy-dispersive X-ray spectroscopy (EDX), and alternating current susceptibility (ACS). It was found that Y123 confirmed that the majority of phases in all the XRD patterns was the orthorhombic crystal structure and the Pmmm space group with secondary phases belonged to Y2Ba1Cu1O5 (Y211). The highest Tc obtained when graphene nanoparticles were added in the Y123 sample was x = 1.0 wt.%, followed by x = 0.5 wt.% with 92.64 and 92.59 K, respectively. From the microstructure analysis, the average grain size significantly decreased to 4.754 µm at x = 0.5 wt.%. The addition of graphene nanoparticles had disturbed the grain growth of Y123, affecting the superconducting properties of the samples. On the other hand, the intergranular critical current density, Jcm, was found to increase with graphene nanoparticle addition and had the highest value at x = 1.0 wt.%, indicating that graphene nanoparticles acted as pinning centers in the Y123 matrix.

scholarly journals Effect of thiourea on structure, morphology and optical properties of spray deposited CZTS thin films for solar cell applications

2021 ◽  
Vol 10 (1) ◽  
pp. 39
Author(s):  
Ramesh B. Mahewar ◽  
Ravikumar R. Vidule ◽  
Limbraj S. Ravangave
Keyword(s):  
Optical Properties ◽  
Band Gap ◽  
Copper Chloride ◽  
X Ray ◽  
Tin Chloride ◽  
Structure Morphology ◽  
Thiourea Concentration ◽  
Analytical Reagent ◽  
Czts Thin Films ◽  
Deposited Films

<p>Cu2ZnSnS4 (CZTS) films of different Thiorea (SC (NH2)2) molarity were deposited by using simple chemical spray technique at substrate temperature 275°C. Analytical reagent Grade Copper chloride (CuCl2), Zinc chloride (ZnCl2), Tin chloride (SnCl4.5H2O) were used as Cu+ , Zn+ , and Sn+ ion sources respectively and thiourea (SC(NH2)2) (0.02, 0.04 0.06 0.08, and 0.1 M) was used as a Sion source. A set of five CZTS films was deposited using five different molarity of thiourea. The structure, Morphology, Elemental analysis and optical properties of these films were studied using X-ray diffratometer (XRD), Scanning Electron Microscopy (SEM) Energy Dispersive X-ray Analysis (EDX) and UV-Visible spectroscopy techniques respectively. The XRD spectra showed that all films are polycrystalline tetragonal structure with preferential orientation along (112) plane. The calculated crystallite size was increased with increase in thiourea concentration. Variations of optical band gap with thiourea molarity have been investigated using Tauc plots. SEM micrographs exhibits CZTS spherical granules regularly arranged with some void spaces. Purity of deposited films was investigated using EDX analysis. All the CZTS films exhibits higher absorption coefficient (𝛼 &gt; 104) cm-1 and band gap in the reported range (1.2-1.53 eV) can be used as an absorber layer in solar cells.</p>

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