scholarly journals Correction Procedures for Temperature and Irradiance of Photovoltaic Modules: Determination of Series Resistance and Temperature Coefficients by Means of an Indoor Solar Flash Test Device

2021 ◽  
Vol 65 (2-4) ◽  
pp. 264-270
Author(s):  
Silvia Luciani ◽  
Gianluca Coccia ◽  
Sebastiano Tomassetti ◽  
Mariano Pierantozzi ◽  
Giovanni Di Nicola
Keyword(s):  
Series Resistance ◽  
Experimental Tests ◽  
Standard Test ◽  
Operating Conditions ◽  
Test Device ◽  
Solar Simulator ◽  
Photovoltaic Modules ◽  
Current Voltage ◽  
And Control

The comparison between I-V (current-voltage) curves measured on site and I-V curves declared by the manufacturer allows to detect decrease of performance and control the degradation of photovoltaic modules and strings. On site, I-V curves are usually obtained under operating conditions (OPCs), i.e. at variable solar radiation and module temperature. OPC curves must be translated into standard test conditions (STCs), at a global irradiance of 1000 W/m2 and a module temperature of 25 °C. The correction at STC conditions allows to estimate the deviation between the power of the examined module and the maximum power declared by the manufacturer. A possible translation procedure requires two correction parameters: Rs’, the internal series resistance, and k’, the corresponding temperature coefficient. The aim of this work is to determine the correction parameters carrying out specific experimental tests as indicated by IEC 60891. A set of brand-new photovoltaic modules was experimentally characterized determining their I-V curves by means of an indoor solar flash test device based on a class A+ AM 1.5 solar simulator. Using the OPC I-V curves, obtained at several conditions of irradiance and temperature, it was possible to determine the correction parameters of the photovoltaic modules being considered.

Determination of the Performance of Photovoltaic Modules Using Environmental Conditions

2011 ◽  
Vol 367 ◽  
pp. 507-515
Author(s):  
Tajudeen H. Sikiru ◽  
Olorunfemi Ojo ◽  
Boyi Jimoh
Keyword(s):  
Ambient Temperature ◽  
Environmental Conditions ◽  
Environmental Parameters ◽  
Standard Test ◽  
Characteristic Model ◽  
Photovoltaic Modules ◽  
Naturally Occurring ◽  
Current Voltage ◽  
Pv Modules

Manufacturers usually specify photovoltaic (PV) modules at standard test conditions of and , which may not be attainable anywhere in the world. Therefore, to determine the performance of PV modules at naturally occurring irradiance and ambient temperature, this paper proposes a theoretical methodology. This method could be used to predict the performance of PV modules given the irradiance and the ambient temperature at the site of installation. A novel technique that is based on the current-voltage characteristic model is used, it accounts for the variability in the environmental parameters. The irradiance and the ambient temperature of Zaria, Nigeria were used as an illustrative example, which showed the effects of the environmental conditions on the performance of PV modules.

New Method to Determine the a-Si:H Pin Diode Series Resistance by Noise Measurements

1998 ◽  
Vol 507 ◽  
Author(s):  
F. Blecher ◽  
K. Seibel ◽  
M. Hillebrand ◽  
M. Böhm
Keyword(s):  
Series Resistance ◽  
Partial Information ◽  
Low Noise ◽  
Operating Conditions ◽  
New Method ◽  
Measuring System ◽  
Pin Diode ◽  
Noise Current ◽  
Current Voltage ◽  
Noise Measurements

ABSTRACTThe series resistance limits the linearity of photodiodes and decreases the efficiency of solar cells. It is usually determined from IV-measurements for moderate and high forward current density. This method, however, provides only partial information about Rs, since the series resistance depends on the operating point. An alternative method is based on noise measurements. System noise of the measuring system with a low-noise current-voltage converter has been investigated. A new method for extraction of photodiode series resistance from noise measurements is suggested. Noise measurements are carried out for a-Si:H pin diodes. The series resistance of an amorphous pin diode has been extracted for different operating conditions using the new measurement method.

PHYSICAL ORIGINS OF 1/f NOISE IN Si δ-DOPED SCHOTTKY DIODES

2014 ◽  
Vol 13 (01) ◽  
pp. 1450003 ◽  
Author(s):  
ALEXEY V. KLYUEV ◽  
EVGENY I. SHMELEV ◽  
ARKADY V. YAKIMOV
Keyword(s):  
Experimental Data ◽  
Schottky Diode ◽  
Series Resistance ◽  
Schottky Diodes ◽  
Voltage Characteristic ◽  
Schottky Junction ◽  
Current Voltage Characteristic ◽  
Impurity Atoms ◽  
Current Voltage

A model of Schottky diode with δ-doping is suggested. The aim is the determination of technological areas of the diode, which are responsible for the 1/f noise. Series resistance of base and contacts, and the possible leakage are taken into account. Equivalent parameters of the diode are defined from the analysis of the current–voltage characteristic. The model of fluctuations in the charge of non-compensated donors in δ-layer of Schottky junction (ΔNs – model) and model of 1/f noise in leakage current are suggested for an explanation of experimental data. Our study show that, in the investigated diodes, in a million atomic impurities, there are about 1–10 special impurity atoms with stochastically modulated ionization energy.

Development of Mathematical Equation for Photovoltaic Array Internal Resistance Measurement under Operating Conditions

2016 ◽  
Vol 839 ◽  
pp. 59-64
Author(s):  
Nattawut Khaosaad ◽  
Nipon Ketjoy ◽  
Sarayooth Vaivudh ◽  
Kobsak Sriprapha
Keyword(s):  
Series Resistance ◽  
Crystalline Silicon ◽  
Internal Resistance ◽  
Standard Test ◽  
Operating Conditions ◽  
Resistance Measurement ◽  
Shunt Resistance ◽  
Photovoltaic Array ◽  
Pv Array ◽  
Linear Regression Technique

A novel technique has been developed for PV array internal resistance measurement while keeping the plant in operation in contrary to flash test or basic equation (Eb) for which the modules need to be disconnected from the system. We present an equation developed for the array’s internal resistance measurement for PV technologies namely Amorphous Silicon (a-Si), Poly Crystalline Silicon (p-Si) and Hybrid Crystalline Silicon (HIT). Monthly Measured I-V characteristic curves of PV Array were converted to Standard Test Conditions following the IEC 60891 standard. Multiple regression analysis and linear regression technique were used to develop the equation for estimating the PV array internal resistance. The developed equations (Ed) will find the relationships of the 4 variables that are Series resistance (Rs), Shunt resistance (Rsh), maximum voltage (Vm) and maximum current (Im). The results revealed that the Ed can be applied to measure the PV array internal resistance value with low error margin than Eb. The series resistance calculated using Ed is higher than Eb about 1.11 %, 1.88 % and 0.87 % for a-Si, p-Si and HIT respectively. The shunt resistance calculated using Ed is higher than Eb about 0.07 %, 0.09 % and 0.09% for a-Si, p-Si and HIT respectively.

scholarly journals Electrical properties and the determination of interface state density from I-V, C-f and G-f measurements in Ir/Ru/n-InGaN Schottky barrier diode

2017 ◽  
Vol 51 (12) ◽  
pp. 1698
Author(s):  
R. Padma ◽  
V. Rajagopal Reddy
Keyword(s):  
Electrical Properties ◽  
Barrier Height ◽  
Series Resistance ◽  
Forward Bias ◽  
Interface State ◽  
State Density ◽  
Interface State Density ◽  
Current Voltage ◽  
Density Of Interface States

The electrical properties of the Ir/Ru Schottky contacts on n-InGaN have been investigated by current-voltage (I-V), capacitance-voltage (C-V), capacitance-frequency (C-f) and conductance-frequency (G-f) measurements. The obtained mean barrier height and ideality factor from I-V are 0.61 eV and 1.89. The built-in potential, doping concentration and barrier height values are also estimated from the C-V measurements and the corresponding values are 0.62 V, 1.20x1017 cm-3 and 0.79 eV, respectively. The interface state density (NSS) obtained from forward bias I-V characteristics by considering the series resistance (RS) values are lower without considering the series resistance (RS). Furthermore, the interface state density (NSS) and relaxation time (tau) are also calculated from the experimental C-f and G-f measurements. The NSS values obtained from the I-V characteristics are almost three orders higher than the NSS values obtained from the C-f and G-f measurements. The experimental results depict that NSS and tau are decreased with bias voltage. The frequency dependence of the series resistance (RS) is attributed to the particular distribution density of interface states. DOI: 10.21883/FTP.2017.12.45189.8340

scholarly journals A method of determining the parameters in systems with serialized Current-Voltage characteristics

2021 ◽  
Vol 2090 (1) ◽  
pp. 012077
Author(s):  
R.O. Ocaya ◽  
F. Yakuphanoğlu
Keyword(s):  
Ideality Factor ◽  
Empirical Data ◽  
Series Resistance ◽  
Measurement Data ◽  
The Other ◽  
Actual Measurement ◽  
Independent Variables ◽  
Current Voltage ◽  
Current Voltage Characteristics

Abstract We propose a method of determining the parameters of systems with serialized characteristics, which may suggest the existence of symmetry in the system. The method is demonstrated in extracting the parameters of a metal-semiconductor in the presence of significant series resistance, which is itself important but limits the accuracy of the existing methods in the determination of the other calculated parameters such as barrier height and ideality factor. We show the steps involved in establishing whether symmetry exists, and show that some functional interrelations between the parameters and the independent variables can readily be established. We use actual measurement data from an experimental diode and show that the results outperform the popular Cheung-Cheung approach. This general approach, therefore, represents a significant advancement in the analysis of serialized empirical data.

scholarly journals Use of an Indoor Solar Flash Test Device to Evaluate Production Loss Associated to Specific Defects on Photovoltaic Modules

2020 ◽  
Vol 15 (5) ◽  
pp. 639-646
Author(s):  
Silvia Luciani ◽  
Gianluca Coccia ◽  
Sebastiano Tomassetti ◽  
Mariano Pierantozzi ◽  
Giovanni Di Nicola
Keyword(s):  
Visual Inspection ◽  
Photovoltaic Module ◽  
Production Loss ◽  
Test Device ◽  
Solar Simulator ◽  
Photovoltaic Modules ◽  
Class A ◽  
Pv Modules ◽  
Non Destructive ◽  
Destructive Methods

During their lifetime, photovoltaic (PV) plants are subject to a normal degradation of their components, and they are consequently characterized by decrease of the expected production. In order to prevent and evaluate failures and loss of production, specific tests can be carried out on the PV modules. Non-destructive methods, such as visual inspection and infrared thermography, can be performed in order to determine production failures or defects on the PV modules. I-V curves allow to estimate the performance of photovoltaic modules and strings, estimating the deviation between the power of the examined module and that declared by the manufacturer. The aim of this work is to evaluate the efficiency loss of photovoltaic modules associated to specific defects, causing in a systematic way some faults on a set of brand-new modules and assessing the relative decrease of power. The set of brand-new photovoltaic modules, after being damaged, was experimentally characterized determining their I-V curves by means of an indoor solar flash test device based on a class A+ AM 1.5 solar simulator. Using the I-V curves as a dataset, it was possible to estimate the incidence of different defects on the power of the photovoltaic module being considered.

scholarly journals A Neural Approach of Multimodel Representation of Complex Processes

2008 ◽  
Vol 3 (2) ◽  
pp. 149 ◽  
Author(s):  
Nesrine Elfelly ◽  
Jeans-Yves Dieulot ◽  
Pierre Borne
Keyword(s):  
Parametric Identification ◽  
Parameters Estimation ◽  
Operating Conditions ◽  
Good Precision ◽  
Design Problems ◽  
Suggested Approach ◽  
Modeling And Control ◽  
Complex Processes ◽  
And Control

<p>The multimodel approach was recently developed to deal with the issues of complex processes modeling and control. Despite its success in different fields, it still faced with some design problems, and in particular the determination of the models and of the adequate method of validities computation. <br />In this paper, we propose a neural approach to derive different models describing the process in different operating conditions. The implementation of this approach requires two main steps. The first step consists in exciting the system with a rich (e.g. pseudo random) signal and collecting measurements. These measurements are classified by using an adequate Kohonen self-organizing neural network. The second step is a parametric identification of the base-models by using the classification results for order and parameters estimation. The suggested approach is implemented and tested with two processes and compared to the classical modeling approach. The obtained results turn out to be satisfactory and show a good precision. These also allow to draw some interpretations about the adequate validities’ calculation method based on classification results.</p>

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