Capacitance-voltage measurements of hetero-layer OLEDs treated by an electric field and thermal annealing

2021 ◽  
Vol 10 (3) ◽  
pp. 217-226
Keyword(s):  
Electric Field ◽  
Thermal Annealing ◽  
Capacitance Voltage

Rapid Thermal Annealing of High Energy Si Implants Into GaAs

1987 ◽  
Vol 92 ◽  
Author(s):  
Ronald N. Legge ◽  
Wayne M. Paulson
Keyword(s):  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Ohmic Contacts ◽  
Low Dose ◽  
High Energy ◽  
Low Noise ◽  
Furnace Annealing ◽  
Conventional Furnace ◽  
Capacitance Voltage ◽  
Lec Gaas

ABSTRACTRapid thermal annealing (RTA) technology offers potential advantages for the processing of ion implanted GaAs. High energy implants of 300 keV or above are used for power MESFETs as well as in the ohmic contacts for low noise devices. The purpose of this paper is to investigate and characterize the RTA of Si implants into LEC GaAs using implant energies of 300keV and above, and a range of doses from 2.3 ×1012 to 3×1014 /cm2. The wafers were analyzed using capacitance-voltage and Hall measurements. Factors which cause variability in pinchoff voltage are identified and an RTA process comparable to conventional furnace annealing is presented for low dose implants. Superior implant activation is observed for higher dose implants through the use of higher annealing temperature.

Variation of Thermal Donors in Diffused Wafers by rapid Thermal Annealing

1991 ◽  
Vol 224 ◽  
Author(s):  
Takahide Sugiyama ◽  
Akira Usami ◽  
Akira Ito ◽  
Taichi Natori ◽  
Yutaka Tokuda ◽  
...  
Keyword(s):  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Deep Level ◽  
Total Concentration ◽  
Annihilation Rate ◽  
Low Oxygen ◽  
Heat Treated ◽  
Capacitance Voltage ◽  
Transient Spectroscopy ◽  
Low Oxygen Concentration

AbstractVariations of thermal donors (TDs) in highly phosphorus-diffused n-type silicon wafers (diffused wafer) have been studied with deep-level transient spectroscopy and capacitance-voltage measurements. The introduction and annihilation of TDs have been performed with heat treatment at 450°C and rapid thermal annealing (RTA) in the temperature range 600-900°C,respectively. In diffused floating zone-grown (FZ) silicon wafer, TDs were observed. It is thought that oxygen diffuses into FZ silicon during the diffusion process, since no TDs are generally formed in FZ silicon for the low oxygen concentration. The behavior of TDs in diffused wafer corresponded with that in oxygen-rich bulk silicon. TDs were completely annihilated by RTA at 700 and 800°C for the as-diffused wafers and the heat-treated ones at 450°C for 24 h, respectively, and the annihilation rate for the as-diffused wafers was fast, as compare to that for the heat-treated ones. This results may be caused by difference in the total concentration and cluster size of TDs.

Vertical Electric Field-Induced Abnormal Capacitance-Voltage Electrical Characteristics in a-InGaZnO TFTs

2021 ◽  
pp. 1-6
Author(s):  
Chuan-Wei Kuo ◽  
Ting-Chang Chang ◽  
Hong-Chih Chen ◽  
Yu-Ching Tsao ◽  
Jian-Jie Chen ◽  
...  
Keyword(s):  
Electric Field ◽  
Electrical Characteristics ◽  
Vertical Electric Field ◽  
Capacitance Voltage

Rapid Thermal Annealing of As in Si

1989 ◽  
Vol 146 ◽  
Author(s):  
N.T. Shih ◽  
F.S. Huang ◽  
C.H. Chu ◽  
W.S. Chen
Keyword(s):  
Electric Field ◽  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Chebyshev Polynomial ◽  
Depth Profiling ◽  
Electrical Characterization ◽  
Thermal Treatments ◽  
Hot Electron ◽  
Polynomial Distribution ◽  
Electron Effects

ABSTRACTThe results of a detailed investigation of diffusion of ion implanted As in Si during Rapid Thermal Annealing are reported. A series of experiments has been performed on samples prepared for various thermal treatments, such as peroxidation and preheat. The RTA conditions were chosen at 850°C for 15 seconds in order to study the metastable state. Sample analysis includes depth profiling by RBS and Spreading Resistance measurements, electrical characterization employing Hall measurements, and residual defects by cross-section TEM and planar image. The carrier concentration profile shows the different extent of the mixed Gaussian-Chebyshev polynomial distribution for various prepared samples. We believe the neutral interstitial state I°(Si) survives during RTA for asreceived samples. It gives a Gaussian curve in As profile. The denuded region produced after thermal treatments reduces the oxygen content and creates less 1°(Si) during SPE. So the Gaussian-Chebyshev polynomial distribution was obtained. From the above study, we believe the Gaussian profile can be obtained by controlling RTA conditions This Gaussian-like profile can also suppress hot electron effects by its smooth gradient (generating small electric field) near drain and large overlap under spacer (making large electric field away from gate). So we fabricated rapid thermal annealing singlediffusion drain n-MOSFET. The reduction of hot electron effects was studied, too.

Plasma-Induced Electron Traps in n-InP

1995 ◽  
Vol 378 ◽  
Author(s):  
Yoshifumi Sakamoto ◽  
Takashi Sugino ◽  
Koichiro Matsuda ◽  
Junji Shirafuji
Keyword(s):  
Activation Energy ◽  
Electric Field ◽  
Thermal Annealing ◽  
Hydrogen Plasma ◽  
Hydrogen Atoms ◽  
Plasma Exposure ◽  
Electron Traps ◽  
Transient Spectroscopy ◽  
Capacitance Transient ◽  
Isothermal Capacitance Transient Spectroscopy

AbstractDeep electron traps in n-InP introduced during plasma exposure have been studied by means of isothermal capacitance transient spectroscopy (ICTS). Three electron traps, (Ec–0.21 eV), (Ec–0.34 eV) and (Ec–0.54 eV), which are designated E2, E3 and E4, respectively, are detected in n-InP treated with H2 plasma and by subsequent annealing. The E2 trap is induced by plasma exposure and the E3 trap is produced by thermal annealing. The E4 trap is generated by both plasma exposure and thermal annealing. These three traps are passivated with hydrogen atoms. The E2 trap density near the surface of hydrogen-plasma-treated samples is strongly enhanced by applying electric field because of dissociation of hydrogen from E2 trap. The E2 trap is annealed out with the activation energy of 1.5 eV and the attempt-to-escape frequency of 3.2 × 1014 s−1. Phosphine plasma treatment is effective in suppressing generation of these electron traps.

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