65.3: 3.1-Inch Flexible Top-Emitting AMOLED on Plastic Substrate Driven by Organic Thin Film Transistors

2009 ◽  
Vol 40 (1) ◽  
pp. 986 ◽  
Author(s):  
Jing-Yi Yan ◽  
Hsiang-Liang Chen ◽  
Shu-Tung Yeh ◽  
Jin-Long Liao ◽  
Yen-Yu Wu ◽  
...  
2003 ◽  
Vol 42 (Part 1, No. 1) ◽  
pp. 299-304 ◽  
Author(s):  
Yoshiki Iino ◽  
Youji Inoue ◽  
Yoshihide Fujisaki ◽  
Hideo Fujikake ◽  
Hiroto Sato ◽  
...  

MRS Advances ◽  
2015 ◽  
Vol 1 (10) ◽  
pp. 645-650 ◽  
Author(s):  
Tomi Hassinen ◽  
Ari Alastalo ◽  
Kim Eiroma ◽  
Tiia-Maria Tenhunen ◽  
Vesa Kunnari ◽  
...  

ABSTRACTWe report fully-printed top-gate-bottom-contact organic thin-film transistors using substrates prepared from cellulose nanofibers and commercially available printing inks to fabricate the devices. Gravure printing was used to coat the substrate with a polymer resist to decrease the surface roughness and close the surface. Transistor structures were fabricated using inkjet printing for conductors and gravure printing for the dielectric and semiconducting layers. The obtained transistor performance is compared to that of similar transistors on plastic substrate.


2006 ◽  
Vol 89 (9) ◽  
pp. 093504 ◽  
Author(s):  
Seung Hoon Han ◽  
Sang Mi Cho ◽  
Jun Hee Kim ◽  
Jae Won Choi ◽  
Jin Jang ◽  
...  

2020 ◽  
Vol 91 (3) ◽  
pp. 30201
Author(s):  
Hang Yu ◽  
Jianlin Zhou ◽  
Yuanyuan Hao ◽  
Yao Ni

Organic thin film transistors (OTFTs) based on dioctylbenzothienobenzothiophene (C8BTBT) and copper (Cu) electrodes were fabricated. For improving the electrical performance of the original devices, the different modifications were attempted to insert in three different positions including semiconductor/electrode interface, semiconductor bulk inside and semiconductor/insulator interface. In detail, 4,4′,4′′-tris[3-methylpheny(phenyl)amino] triphenylamine (m-MTDATA) was applied between C8BTBTand Cu electrodes as hole injection layer (HIL). Moreover, the fluorinated copper phthalo-cyanine (F16CuPc) was inserted in C8BTBT/SiO2 interface to form F16CuPc/C8BTBT heterojunction or C8BTBT bulk to form C8BTBT/F16CuPc/C8BTBT sandwich configuration. Our experiment shows that, the sandwich structured OTFTs have a significant performance enhancement when appropriate thickness modification is chosen, comparing with original C8BTBT devices. Then, even the low work function metal Cu was applied, a normal p-type operate-mode C8BTBT-OTFT with mobility as high as 2.56 cm2/Vs has been fabricated.


2010 ◽  
Vol 130 (2) ◽  
pp. 161-166
Author(s):  
Yoshinori Ishikawa ◽  
Yasuo Wada ◽  
Toru Toyabe ◽  
Ken Tsutsui

2013 ◽  
Vol E96.C (11) ◽  
pp. 1360-1366 ◽  
Author(s):  
Ichiro FUJIEDA ◽  
Tse Nga NG ◽  
Tomoya HOSHINO ◽  
Tomonori HANASAKI

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