scholarly journals A micromagnetic study: lateral size dependence of the macroscopic properties of rectangular parallelepiped Cobalt-ferrite nanoferromagnetic

2020 ◽  
Vol 4 (1) ◽  
pp. 16
Author(s):  
Nur Aji Wibowo ◽  
Susatyo Pranoto ◽  
Cucun Alep Riyanto ◽  
Andreas Setiawan
Keyword(s):  
Cobalt Ferrite ◽  
Size Dependence ◽  
Rectangular Parallelepiped ◽  
Magnetic Characteristics ◽  
Micromagnetic Simulations ◽  
Barrier Energy ◽  
Reversal Time ◽  
Curve Profile ◽  
20 Nm ◽  
The Impact

<span lang="EN-US">The purpose of this study is to provide systematic information through micromagnetic simulations related to the impact of particle size on the magnetic characteristics of Cobalt-ferrite MNP. The micromagnetic computations performed were based on LLG equation. The MNPs sample was simulated in the form of a rectangular parallelepiped with a thickness of 20 nm and square surface with lateral length varies from 10 to 80 nm at an interval of 10 nm. </span><span lang="EN-ID">The results of this study indicate that the size changes in Cobalt-ferrite MNP have a significant impact on various magnetic properties, such as the magnitude of the barrier energy, coercive and nucleation fields, magnetization rate, magnetization curve profile, and magnetization mode.</span><span lang="EN-ID">Cobalt-ferrite MNP with a size of 10 nm shows a single domain with a relatively short magnetization reversal time and high coercive field.</span>

scholarly journals Photocrosslinking and photopatterning of magneto-optical nanocomposite sol–gel thin film under deep-UV irradiation

2021 ◽  
Vol 11 (1) ◽  
Author(s):  
C. Bidaud ◽  
D. Berling ◽  
D. Jamon ◽  
E. Gamet ◽  
S. Neveu ◽  
...  
Keyword(s):  
Uv Irradiation ◽  
Cobalt Ferrite ◽  
Sol Gel ◽  
Optical Devices ◽  
High Concentration ◽  
Nanocomposite Thin Films ◽  
Deep Uv ◽  
High Concentrations ◽  
193 Nm ◽  
The Impact

AbstractThis paper is aimed at investigating the process of photocrosslinking under Deep-UV irradiation of nanocomposite thin films doped with cobalt ferrite magnetic nanoparticles (MNPs). This material is composed of a hybrid sol–gel matrix in which MNP can be introduced with high concentrations up to 20 vol%. Deep-UV (193 nm) is not only interesting for high-resolution patterning but we also show an efficient photopolymerization pathway even in the presence of high concentration of MNPs. In this study, we demonstrate that the photocrosslinking is based on the free radical polymerization of the methacrylate functions of the hybrid precursor. This process is initiated by Titanium-oxo clusters. The impact of the nanoparticles on the photopolymerization kinetic and photopatterning is investigated. We finally show that the photosensitive nanocomposite is suitable to obtain micropatterns with sub-micron resolution, with a simple and versatile process, which opens many opportunities for fabrication of miniaturized magneto-optical devices for photonic applications.

Size-Dependence of Photoluminescence Property of ZnO Nanoparticles

2014 ◽  
Vol 887-888 ◽  
pp. 143-146 ◽  
Author(s):  
Xiao Fang Wang ◽  
Yun Liang Fang ◽  
Tian Le Li ◽  
Fu Juan Wang
Keyword(s):  
Grain Size ◽  
Lower Energy ◽  
Size Dependence ◽  
Surface States ◽  
Photoluminescence Property ◽  
Precipitation Method ◽  
Pl Spectra ◽  
Broadband Emission ◽  
Band Emission ◽  
20 Nm

Nanometer-sized ZnO crystals with the diameter from 20 nm to 110 nm were prepared by homogenous precipitation method (HPM). The photoluminescence (PL) spectra of as-prepared nanoparticles under excitation at the wavelength of 320 nm were detected. The PL spectra were fitted with Gaussian curves, in which a good fitting consisting of six Gaussian peaks was obtained. We observed that the multi-peak centers do not change much, while the relative amplitude of Gaussian combination to the band-to-band emission decreases rapidly with the increased grain size. It shows that the broadband emission at the lower energy is associated with the surface states.

scholarly journals ZTC bias point of advanced fin based device: The importance and exploration

2015 ◽  
Vol 28 (3) ◽  
pp. 393-405 ◽  
Author(s):  
Sushanta Mohapatra ◽  
Kumar Pradhan ◽  
Prasanna Sahu
Keyword(s):  
Power Dissipation ◽  
Temperature Compensation ◽  
Performance Metrics ◽  
Zero Temperature ◽  
Sweet Spot ◽  
Static Power ◽  
20 Nm ◽  
Bias Point ◽  
The Impact ◽  
Present Understanding

The present understanding of this work is about to evaluate and resolve the temperature compensation point (TCP) or zero temperature coefficient (ZTC) point for a sub-20 nm FinFET. The sensitivity of geometry parameters on assorted performances of Fin based device and its reliability over ample range of temperatures i.e. 25?C to 225?C is reviewed to extend the benchmark of device scalability. The impact of fin height (HFin), fin width (WFin), and temperature (T) on immense performance metrics including on-off ratio (Ion/Ioff), transconductance (gm), gain (AV), cut-off frequency (fT), static power dissipation (PD), energy (E), energy delay product (EDP), and sweet spot (gmfT/ID) of the FinFET is successfully carried out by commercially available TCAD simulator SentaurusTM from Synopsis Inc.

Control of structural and magnetic characteristics of cobalt ferrite by post-calcination mechanical milling

2019 ◽  
Vol 134 ◽  
pp. 286-294 ◽  
Author(s):  
V. Mahdikhah ◽  
A. Ataie ◽  
A. Babaei ◽  
S. Sheibani ◽  
C.W.Ow- Yang ◽  
...  
Keyword(s):  
Mechanical Milling ◽  
Cobalt Ferrite ◽  
Magnetic Characteristics

Detailed magnetic characteristics of cobalt ferrite (CoxFe3−xO4) nanoparticles synthesized in the presence of PVP surfactant

2020 ◽  
Vol 126 (4) ◽  
Author(s):  
M. Almasi Kashi ◽  
S. Alikhanzadeh-Arani ◽  
E. Bagherian Jebeli ◽  
A. H. Montazer
Keyword(s):  
Cobalt Ferrite ◽  
Magnetic Characteristics

Size dependence of magnetorheological properties of cobalt ferrite ferrofluid

2015 ◽  
Author(s):  
B. Radhika ◽  
Rasmita Sahoo ◽  
S. Srinath
Keyword(s):  
Cobalt Ferrite ◽  
Size Dependence

scholarly journals Comparative Simulation Analysis of Process Parameter Variations in 20 nm Triangular FinFET

2017 ◽  
Vol 2017 ◽  
pp. 1-8 ◽  
Author(s):  
Satyam Shukla ◽  
Sandeep Singh Gill ◽  
Navneet Kaur ◽  
H. S. Jatana ◽  
Varun Nehru
Keyword(s):  
Process Parameters ◽  
Simulation Analysis ◽  
Oxide Thickness ◽  
Channel Length ◽  
Deep Submicron ◽  
Device Structure ◽  
Short Channel ◽  
20 Nm ◽  
The Impact ◽  
Fin Shape

Technology scaling below 22 nm has brought several detrimental effects such as increased short channel effects (SCEs) and leakage currents. In deep submicron technology further scaling in gate length and oxide thickness can be achieved by changing the device structure of MOSFET. For 10–30 nm channel length multigate MOSFETs have been considered as most promising devices and FinFETs are the leading multigate MOSFET devices. Process parameters can be varied to obtain the desired performance of the FinFET device. In this paper, evaluation of on-off current ratio (Ion/Ioff), subthreshold swing (SS) and Drain Induced Barrier Lowering (DIBL) for different process parameters, that is, doping concentration (1015/cm3 to 1018/cm3), oxide thickness (0.5 nm and 1 nm), and fin height (10 nm to 40 nm), has been presented for 20 nm triangular FinFET device. Density gradient model used in design simulation incorporates the considerable quantum effects and provides more practical environment for device simulation. Simulation result shows that fin shape has great impact on FinFET performance and triangular fin shape leads to reduction in leakage current and SCEs. Comparative analysis of simulation results has been investigated to observe the impact of process parameters on the performance of designed FinFET.

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