scholarly journals Thermodynamics of Organic Electrochemical Transistors

Author(s):  
matteo cucchi ◽  
Anton Weissbach ◽  
Lukas Bongartz ◽  
Hsing Tseng ◽  
Hans Kleemann ◽  
...  

Abstract Bioelectronics which bridge the gap between conventional electronics and biological systems are actively researched due to their fascinating perspectives in healthcare and other fields. A key element of future bioelectronics is the organic electrochemical transistor (OECT) that, by employing a mixed ion-electron conducting materials, can perform switching tasks in electrolytic environments and serve as sensoric or actoric element. OECTs differ substantially from their inorganic field-effect counterparts, mainly due to their electrochemical, rather than electrostatic, gate operation principle. However, the working mechanism of OECTs is modeled as the one of the field-effect transistor: this approach not only fails to give quantitative agreement with experimental observation but also ignores the material properties of the channel and the chemical dynamics that stem for the operation of the device. Here, we present a new comprehensive unified model that can explain the behavior of OECTs across a broad range of materials, designs, and operation regimes. We treat the polymeric channel as a thermodynamic binary system and show that the entropy of mixing is the major driving force behind the operation of the OECT. We are able to quantify the entropic and enthalpic interactions between charged species for a variety of materials and solvents and harness this knowledge to provide guidelines for material modeling and insights for device fine-tuning for targeted applications. Finally, our thermodynamic model provides a description of the intrinsic origin of the ubiquitous hysteretic behavior of OECTs.

2019 ◽  
Vol 18 ◽  
pp. 145
Author(s):  
M. Fragopoulou ◽  
V. Konstantakos ◽  
M. Zamani ◽  
S. Siskos ◽  
T. Laopoulos ◽  
...  

A new dosemeter based on a depleted Metal-Oxide-Semiconductor field effect transistor, sensitive to both neutrons and gamma radiation was manufactured at LAAS-CNRS Laboratory, Toulouse France. In order to be used for neutron dosimetry a thin film of lithium fluoride was deposited on the surface of the gate of the device. The characteristics of the dosemeter such as its response to neutron dose were investigated. The response in thermal neutrons was found to be high. In fast neutrons the response was lower than that of thermal neutrons but higher than the one presented in literature.


2021 ◽  
Vol 22 (1) ◽  
pp. 339-346
Author(s):  
Muhaimin Bin Mohd Hashim ◽  
AHM Zahirul ALAM ◽  
Naimah Binti Darmis

Conventional Field Effect Transistor (FET) are well known to require at least 60mV/decade at 300K change in the channel potential to change the current by a factor of 10. Due to this, 60mV/decade becomes the bottleneck of this day transistor. A comprehensive study of the Negative Capacitance Field Effect Transistor (NCFETis presented.  This paper shows the effect of ferroelectric material in MOSFET structure by replacing the insulator in the conventional MOSFET. It should be possible to obtain a steeper subthreshold swing (SS) compared to the one without a ferroelectric material layer, thus breaking the fundamental limit on the operating voltage of MOSFET.  27% of the subthreshold slope reduction is observed by introducing ferroelectric in the dielectric layer compared to the conventional MOSFETs. Hence, the power dissipation in MOSFET can be mitigated and shine to a new technology of a low voltage/low power transistor operation. ABSTRAK: Transistor Kesan Medan Konvensional (FET) terkenal memerlukan sekurang-kurangnya 60mV / dekad pada 300K perubahan pada saluran yang berpotensi untuk mengubah arus dengan faktor 10. Oleh kerana itu, 60mV / dekad menjadi hambatan transistor hari ini. Kajian komprehensif mengenai Negative Capacitance Field Effect Transistor (NCFETis dikemukakan. Makalah ini menunjukkan kesan bahan ferroelektrik dalam struktur MOSFET dengan mengganti penebat dalam MOSFET konvensional. Sebaiknya dapatkan swing swing subthreshold (SS) yang lebih curam berbanding dengan satu tanpa lapisan bahan ferroelektrik, sehingga melanggar had asas pada voltan operasi MOSFET. 27% pengurangan cerun subthreshold diperhatikan dengan memperkenalkan ferroelektrik di lapisan dielektrik berbanding dengan MOSFET konvensional. Oleh itu, pelesapan daya dalam MOSFET dapat dikurangkan dan bersinar dengan teknologi baru operasi transistor voltan rendah / kuasa rendah.


2020 ◽  
Vol 8 (24) ◽  
pp. 8120-8124 ◽  
Author(s):  
Kaushik Bairagi ◽  
Sara Catalano ◽  
Francesco Calavalle ◽  
Elisabetta Zuccatti ◽  
Roger Llopis ◽  
...  

Polymer field-effect transistors with 2D graphene electrodes are devices that merge the best of two worlds: on the one hand, the low-cost and processability of organic materials and, on the other hand, the chemical robustness, extreme thinness and flexibility of graphene.


2013 ◽  
Vol 4 ◽  
pp. 330-335 ◽  
Author(s):  
Denis E Presnov ◽  
Sergey V Amitonov ◽  
Pavel A Krutitskii ◽  
Valentina V Kolybasova ◽  
Igor A Devyatov ◽  
...  

Background: An experimental and theoretical study of a silicon-nanowire field-effect transistor made of silicon on insulator by CMOS-compatible methods is presented. Results: A maximum Nernstian sensitivity to pH change of 59 mV/pH was obtained experimentally. The maximum charge sensitivity of the sensor was estimated to be on the order of a thousandth of the electron charge in subthreshold mode. Conclusion: The sensitivity obtained for our sensor built in the CMOS-compatible top-down approach does not yield to the one of sensors built in bottom-up approaches. This provides a good background for the development of CMOS-compatible probes with primary signal processing on-chip.


2010 ◽  
Vol E93-C (5) ◽  
pp. 540-545 ◽  
Author(s):  
Dong Seup LEE ◽  
Hong-Seon YANG ◽  
Kwon-Chil KANG ◽  
Joung-Eob LEE ◽  
Jung Han LEE ◽  
...  

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