A Systematic investigation on structural and optical properties of sol-Gel spin coating fabricate CdS Nanocrystalline thin films: Effect of Ni doping

2021 ◽  
Author(s):  
BRIJLATA SHARMA ◽  
Rajesh Lalwani ◽  
Ruby Das ◽  
Devi Singh Raghuwanshi
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Spin Coating ◽  
Sol Gel ◽  
Band Edge ◽  
Photoluminescence Spectra ◽  
Cds Thin Film ◽  
Vis Spectroscopy ◽  
Deposited Films ◽  
Nanocrystalline Thin Films

Abstract In the present work, we have successfully fabricated undoped and Ni-doped Nanocrystalline CdS thin film on an ultrasonically cleaned glass substrate employing the Sol-Gel spin coating technique. The structural and spectroscopic properties of the films were investigated using XRD spectra, UV-Vis spectroscopy and photoluminescence spectra respectively. The X-Ray diffraction spectra revealed the polycrystalline nature of films with cubic structure and (111) as preferred orientation. The average particle size evaluated by the Debye-Scherrer formula lying in the range 6.65nm to 12.05 nm for the deposited films. According to UV-VIS Spectroscopy, the average transmittance of films in the visible region varies between 70–90%. The optical band gap of CdS thin film was evaluated from absorption spectra. The bandgap of the deposited films is in the range of 2.48 eV to 2.70 eV which is higher than that of bulk CdS (2.42eV). This verifies the blue shifting in band edge of CdS Nanocrystalline thin films due to the quantum confinement effect. Photoluminescence spectra of the thin film showed that the fundamental band edge emission peak centred at 485nm also called blue band emission.

scholarly journals Preparation of Glass Plate-Supported Nanostructure ZnO Thin Film Deposited by Sol-Gel Spin-Coating Technique and Its Photocatalytic Degradation to Monoazo Textile Dye

2008 ◽  
Vol 2008 ◽  
pp. 1-5 ◽  
Author(s):  
Mohammad Hossein Habibi ◽  
Mohammad Khaledi Sardashti
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Photocatalytic Degradation ◽  
Spin Coating ◽  
Sol Gel ◽  
Glass Plate ◽  
Zno Thin Films ◽  
Visible Range ◽  
Textile Dye ◽  
Axis Orientation

Glass plate-supported nanostructure ZnO thin films were deposited by sol-gel spin coating. Films were preheated at275∘Cfor 10 minutes and annealed at 350, 450, and550∘Cfor 80 minutes. The ZnO thin films were transparent ca 80–90% in visible range and revealed that absorption edges at about 370 nm. Thec-axis orientation improves and the grain size increases which was indicated by an increase in intensity of the (002) peak at34.4∘in XRD corresponding to the hexagonal ZnO crystal. The photocatalytic degradation of X6G an anionic monoazo dye, in aqueous solutions, was investigated and the effects of some operational parameters such as the number of layer and reusability of ZnO nanostructure thin film were examined. The results showed that the five-layer coated glass surfaces have a very high photocatalytic performance.

Synthesis and Characterizations of Strontium Substituted Hydroxyapatite Thin Films

2010 ◽  
Vol 93-94 ◽  
pp. 231-234
Author(s):  
B. Hongthong ◽  
Satreerat K. Hodak ◽  
Sukkaneste Tungasmita
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Chemical Composition ◽  
Spin Coating ◽  
Phase Structure ◽  
Sol Gel ◽  
Cross Linking ◽  
X Ray Diffraction ◽  
X Ray ◽  
Sol Gel Process

Strontium substituted hydroxyapatite(SrHAp) were fabricated both in the form of powder as reference and thin film by using inorganic precursor reaction. The sol-gel process has been used for the deposition of SrHAp layer on stainless steal 316L substrate by spin coating technique, after that the films were annealed in air at various temperatures. The chemical composition of SrHAp is represented (SrxCa1-x)5(PO4)3OH, where x is equal to 0, 0.5 and 1.0. Investigations of the phase structure of SrHAp were carried out by using X-ray diffraction technique (XRD). The results showed that strontium is incorporated into hydroxyapatite where its substitution for calcium increases in the lattice parameters, and Sr3(PO4)2 can be detected at 900°C. The SEM micrographs showed that SrHAp films exhibited porous structure before develop to a cross-linking structure.

Enhanced Electrical Properties of AZO/IZO Multilayered Thin Film with Post Laser Annealing Process

2021 ◽  
Vol 21 (3) ◽  
pp. 1971-1977
Author(s):  
Jihye Kang ◽  
Dongsu Park ◽  
Donghun Lee ◽  
Masao Kamiko ◽  
Sung-Jin Kim ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Optical Properties ◽  
Multilayer Structure ◽  
Laser Annealing ◽  
Transparent Conducting Oxide ◽  
Sol Gel ◽  
Electrical And Optical Properties ◽  
Vis Spectroscopy ◽  
Doped Zno

In this research, alternative deposition process of ZnO-based thin films have been studied for transparent conducting oxide (TCO) application. To improve the electrical and optical properties of transparent oxide thin films, alternatively stacked Al-doped ZnO and In-doped ZnO thin films were investigated. Multilayer structure of alternative 6 layers of thin films were prepared in this research. Especially, Aluminum and Indium were chosen as dopant materials. Thin films of Al-doped ZnO (AZO) and In-doped ZnO (IZO) were alternatively deposited by spin coating with sol-gel method. After deposition of multilayered thin films, multi steps of furnace (F), rapid thermal annealing (R) and CO2 laser annealing (L) processes were carried out and investigated thin film properties by dependence of post-annealing sequence and thin film structures. The electrical and optical properties of thin films were investigated by 4-point probe and UV-vis spectroscopy and its shows the greatest sheet resistance value of 0.59 kΩ/sq. from AZO/IZO multilayered structure and upper 85% of transmittance. The structural property and surface morphology were measured by X-Ray Diffraction (XRD) and field emission scanning electron microscopy (FE-SEM). The Al- and In-doped ZnO thin film shows the highest intensity value at (002) peak of AZO/IZO multilayer structure which was performed FRL process.

Effect of Bi dopant on morphological and optical properties of ZnO semiconductor films produced by the sol-gel spin coating process

2021 ◽  
Vol 63 (8) ◽  
pp. 778-782
Author(s):  
Tülay Yıldız ◽  
Nida Katı ◽  
Kadriye Yalçın
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Surface Roughness ◽  
Optical Properties ◽  
Spin Coating ◽  
Sol Gel ◽  
Zno Thin Film ◽  
Spin Coating Method ◽  
Coating Method ◽  
Doped Zno

Abstract In this study, undoped semiconductor ZnO thin film and Bi-doped ZnO thin films were produced using the sol-gel spin coating method. By changing each parameter of the spin coating method, the best conditions for the formation of the film were determined via the trial and error method. When the appropriate parameter was found, the specified parameter was applied for each film. The structural, superficial, and optical properties of the films produced were characterized via atomic force microscope (AFM), UV-visible spectroscopy, and Fourier transform infrared (FTIR), and the effects of Bi dopant on these properties were investigated. When the morphological properties of the undoped and Bi-doped ZnO films were examined, it was observed that they had a structure in a micro-fiber shape consisting of nanoparticles. When the surface roughness was examined, it was observed that the surface roughness values became larger as the rate of Bi dopant increased. By examining the optical properties of the films, it was determined that they were direct band transition materials and Bi-doped thin films were involved in the semiconductor range. In addition, optical properties changed positively with Bi dopant. Since Bi-doped ZnO thin film has a wide bandgap and good optical properties, it is a material that can be used in optoelectronic applications.

Electrical Properties of Nanostructured Titanium Dioxide Thin Films Prepared by Sol-Gel Spin-Coating Method

2011 ◽  
Vol 312-315 ◽  
pp. 1027-1031
Author(s):  
Mohd Noor Asiah ◽  
Mat Zain Basri ◽  
Mohamad Rusop
Keyword(s):  
Thin Films ◽  
Titanium Dioxide ◽  
Electrical Properties ◽  
Spin Coating ◽  
Annealing Temperature ◽  
Sol Gel ◽  
Tio2 Thin Films ◽  
Nanostructured Titanium ◽  
Annealing Temperatures ◽  
Vis Spectroscopy

This paper investigated the electrical properties of nanostructured Titanium Dioxide (TiO2) thin films prepared by the sol-gel method at different annealing temperatures. The precursor used was Titanium (IV) butoxide at concentration of 0.4 M. The TiO2 thin films were deposited on the glass and silicon substrates by using the spin coating technique. The influence of annealing temperatures on the electrical, structural, surface morphology and optical properties of the films were characterized by I-V measurement, X-Ray Diffraction (XRD), Scanning Electron Microscopy (SEM) and UV-Vis Spectroscopy, respectively. It was found that the electrical properties of TiO2¬ thin films were changed due to the changes of annealing temperatures. As the annealing temperatures rises, the resistivity of the film found to be decreased. The result also shows that films which does not applied annealing temperature called as deposited were found to be amorphous while the films with annealing temperature T = 350oC and above became crystalline structure. The anatase phase can be obtained at annealing temperatures from T = 350oC up to T = 500oC.

Electrical and Structural Properties of TiO2 Thin Film Prepared at Different Annealing Temperatures by Sol-Gel Spin-Coating Method

2013 ◽  
Vol 667 ◽  
pp. 371-374 ◽  
Author(s):  
M. Basri ◽  
Mohd Nor Asiah ◽  
Mohd Khairul bin Ahmad ◽  
Mohamad Hafiz Mamat ◽  
Mohamad Rusop Mahmood
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Structural Properties ◽  
Spin Coating ◽  
Sol Gel ◽  
Annealing Treatment ◽  
Tio2 Thin Films ◽  
Glass Substrates ◽  
Annealing Temperatures ◽  
Coating Method

Titanium Dioxide (TiO2) thin films have been prepared on glass substrates by using sol-gel method and spin-coating technique. The samples have been annealed at temperatures of 350°C ~ 500oC. The electrical and structural properties of the thin films due to the changes of annealing treatment process were investigated by 2 point probes I-V measurement and X-ray Diffraction (XRD) respectively. The result show that resistivity of the thin film decreased with annealing temperatures. XRD characterization indicates crystalline structure of TiO2 thin films improved as annealed at higher temperatures.

scholarly journals Polymorphs of Neodymium Niobate and Tantalate Thin Films Prepared by Sol-Gel Method

2019 ◽  
Vol 19 (1) ◽  
pp. 34-43
Author(s):  
H. Bruncková ◽  
Ľ. Medvecký ◽  
E. Múdra ◽  
A. Kovalčiková
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Surface Morphology ◽  
Spin Coating ◽  
Sol Gel ◽  
Coating Process ◽  
Spin Coating Process ◽  
Gel Method ◽  
Afm Analysis ◽  
Thin Film Devices

AbstractNeodymium niobate NdNbO4 (NNO) and tantalate NdTaO4 (NTO) thin films (~100 nm) were prepared by sol-gel/spin-coating process on Pb(Zr0.52Ti0.48)O3/Al2O3 substrates with annealing at 1000°C. The precursors of films were synthesized using Nb or Ta tartrate complexes. The XRD results of NNO and NTO films confirmed tetragonal T-NdNbO4 and T-NdTaO4 phases, respectively, with traces of monoclinic MNdNbO4 and M´-NdTaO4. The surface morphology and topography were investigated by SEM and AFM analysis. NTO was smoother with roughness 5.24 nm in comparison with NNO (6.95 nm). In the microstructure of NNO, small spherical (~ 20-50 nm) T-NdNbO4 and larger needle-like particles (~100 nm) of M-NdNbO4 phase were observed. The compact clusters composed of fine spherical T-NdTaO4 particles (~ 50 nm) and cuboidal M´-NdTaO4 particles (~ 100 nm) were found in NTO. The results of this work can contribute to formation of different polymorphs of films for the application in environmental electrolytic thin film devices.

Comparison of surface morphology and structure of Al2O3 thin films deposited by sol-gel and ALD methods

2017 ◽  
Vol 2 (82) ◽  
pp. 49-57 ◽  
Author(s):  
M. Szindler ◽  
L.A. Dobrzański ◽  
M.M. Szindler ◽  
M. Pawlyta ◽  
T. Jung
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Spin Coating ◽  
Sol Gel ◽  
Aluminium Oxide ◽  
Silicon Solar Cells ◽  
Atomic Force ◽  
Transmission Electron ◽  
Morphology And Structure ◽  
Al2o3 Thin Film

Purpose: of this research was examination Al2O3 thin film obtained with two different method, by sol-gel and ALD, and comparison the surface morphology and structure of deposited thin films. The films deposited on the monocrystalline silicon were tested for their suitability for use in silicon solar cells. Design/methodology/approach: Trimethylaluminum (TMA) was used as a precursor of Al2O3 which is reacted with water enabled the deposition of thin films by ALD method. By the sol-gel method the aluminium tri-sec butoxide (TBA) was used as a precursor to obtain Al2O3 thin films. The aluminium oxide solutions prepared by sol-gel method were deposited by spin coating technique. Examination of the structure and morphology of the surface of the Al2O3 thin films deposited by sol gel and ALD method were performed using atomic force microscope and transmission electron microscope. For the analysis of surface topography deposited thin films atomic force microscope XE-100 from Park Systems was used. Qualitative analysis of the chemical composition was carried out using an energy dispersion spectrometer (EDS). The detailed structural studies were conducted using a Titan 80-300 scanning-transmission electron microscope S/TEM from the FEI Company. Detailed research on the structure of the deposited Al2O3 thin films were performed. The HRTEM images and diffraction SAED were recorded. Findings: The small atoms clusters of a width less than 20 nm were documented. The thin film deposited by spin-coating technique on silicon substrate with 3000 rpm is characterized by RMS and Ra values of, respectively, 0.26 and 0.2 nm. RMS was defined as rough mean square parameter and Ra was defined as the arithmetic mean deviation of the profile from the mean line. An analysis of the frequency histograms of irregularities of the thin film obtained by the spin coating on a silicon substrate at 3000 rpm shows that a large part of them does not exceed 0.5 nm, and the single irregularities reach up to 2.2 nm. When comparing the AFM pictures with the thin films deposited by ALD technique and spin-coating it has been found that the thin films obtained on polished silicon substrates are similar in morphology. The EDS spectra shows the characteristic for oxygen (0.525 keV) and aluminum (1.486 keV) reflections derived from the thin film. In Al2O3 thin film obtained by ALD method the occurrence of α phase of aluminum oxide with a hexagonal structure was identified, just like in the case of thin film deposited by sol-gel. Practical implications: Known aluminium oxide properties and the possibility of obtaining a uniform thin layer show that it can be good material for different application. Precise description of the properties of Al2O3 is very important, since this material is one of the most frequently used in catalyst industry, in medicine, electronics and photovoltaics, as well as a protective layer. The Al2O3 thin film can act as passive and anti-reflective layer simultaneously in silicon solar cell. Using this thin film can simplify the technology of manufacturing silicon solar cells Originality/value: The paper presents researches of aluminium oxide thin films deposited by sol-gel and atomic layer deposition method on monocrystalline silicon.

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