scholarly journals Impedance Characterization of AlGaN/GaN/Si High Electron Mobility Transistors

2021 ◽  
Author(s):  
Hana MOSBAHI ◽  
Malek GASSOUMI ◽  
MOhamed Ali ZAIDI
Keyword(s):  
Electrical Transport ◽  
Complex Impedance ◽  
High Electron Mobility Transistors ◽  
High Electron ◽  
Impedance Plot ◽  
Electron Mobility Transistors ◽  
Conductance Data ◽  
Impedance Characterization ◽  
Made In

Abstract AlGaN/GaN HEMTs grown on high resistive silicon (111) substrate grown by molecular beam epitaxy have been investigated using impedance measurements. Passivation of the HEMT devices is made in order to improve the electron transport. As has been found from conductance data, the electron traps are eliminated after passivation. The impedance spectroscopy has been, on the other hand, studied from the electrical transport. As a result, a complex impedance plot was revealed an equivalent circuit models indicating single semicircles and the solid interface.

Device and Circuit Models of Monolithic InAlN/GaN NAND and NOR Logic Cells Comprising D- and E-Mode HEMTs

2019 ◽  
Vol 28 (supp01) ◽  
pp. 1940009
Author(s):  
Aleš Chvála ◽  
Lukáš Nagy ◽  
Juraj Marek ◽  
Juraj Priesol ◽  
Daniel Donoval ◽  
...  
Keyword(s):  
Dynamic Performance ◽  
High Electron Mobility Transistors ◽  
Logic Circuits ◽  
High Electron ◽  
Enhancement Mode ◽  
Electron Mobility Transistors ◽  
Dual Gate ◽  
Logic Cells ◽  
First Time

This paper presents monolithic integrated InAlN/GaN NAND and NOR logic cells comprising depletion-mode, enhancement-mode and dual-gate enhancement-mode high electron mobility transistors (HEMTs). The designed NAND and NOR logic cells consist of the depletion-mode and enhancement-mode HEMT transistors integrated onto a single die. InAlN/GaN-based NAND and NOR logic cells with good static and dynamic performance are demonstrated for the first time. Calibrated static and dynamic electrophysical models are proposed for 2D device simulations in Sentaurus Device environment. Sentaurus Device mixed-mode setup interconnects the transistors to NAND and NOR logic circuits which allows analysis and characterization of the devices as a complex system. Circuit models of depletion-mode, enhancement-mode and dual-gate HEMTs are designed and calibrated by experimental results and 2D device simulations. The proposed models exhibit highly accurate results.

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