scholarly journals Modeling and Design of Mott Selector for ReRAM Based Non-Volatile Memory Cell in Crossbar Architecture

2021 ◽  
Author(s):  
Mohammadreza Farjadian ◽  
Majid Shalchian
Keyword(s):  
Experimental Data ◽  
Memory Cell ◽  
Access Time ◽  
Electrical Model ◽  
Operating Characteristics ◽  
Non Volatile Memory ◽  
Design Requirements ◽  
Simulation Results ◽  
Volatile Memory ◽  
Crossbar Architecture

Abstract In this work, we developed a model for a non-volatile memory cell, based on the electrical model for TiOX/HfOx ReRAM cell and the hybrid electro-thermal model of VO2 Mott selector developed recently by our team. Both models are calibrated and validated with experimental data, and the operating characteristics of one-selector-one-ReRAM (1S1R) memory cell are studied. The length of the selector layer is varied as a design parameter to meet the design requirements for proper read, write and erase operations. Simulation results suggest that modified selector cell with 60 nm length of VO2 layer meets all the requirements for proper operations with the cell write voltage of 1.6 V and erase voltage of 2.5 V. The access time for this structure is studied by benchmarking with experimental data and is estimated to be less than 10.5 ns for write operating and less than 16ns for the erase operation.

Quantum Dot Gate (QDG) Quantum Dot Channel (QDC) Multistate Logic Non-Volatile Memory (NVM) with High-K Dielectric HfO2 Barriers

2020 ◽  
Vol 29 (01n04) ◽  
pp. 2040001
Author(s):  
N. R. Butterfield ◽  
R. Mays ◽  
B. Khan ◽  
R. Gudlavalleti ◽  
F. C. Jain
Keyword(s):  
Quantum Dot ◽  
Hafnium Oxide ◽  
Experimental Testing ◽  
Memory Cell ◽  
Floating Gate ◽  
Carrier Injection ◽  
High K ◽  
Non Volatile Memory ◽  
Volatile Memory ◽  
High K Dielectric

This paper presents the theory, fabrication and experimental testing results for a multiple state Non-Volatile Memory (NVM), comprised of hafnium oxide high-k dielectric tunnel and gate barriers as well as a Silicon Quantum Dot Superlattice (QDSL) implemented for the floating gate and inversion channel (QDG) and (QDC) respectively. With the conclusion of Moore’s Law for conventional transistor fabrication, regarding the minimum gate size, current efforts in memory cell research and development are focused on bridging the gap between the conventions of the past sixty years and the future of computing. One method of continuing the increasing chip density is to create multistate devices capable of storing and processing additional logic states beyond 1 and 0. Replacing the silicon nitride floating gate of a conventional Flash NVM with QDSL gives rise to minibands that result in greater control over charge levels stored in the QDG and additional intermediate states. Utilizing Hot Carrier Injection (HCI) programming, for the realized device, various magnitudes of gate voltage pulses demonstrated the ability to accurately control the charge levels stored in the QDG. This corresponds to multiple threshold voltage shifts allowing detection of multiple states during read operations.

A Novel Trapping-Nitride-Storage Non-Volatile Memory Cell Using a Gated-Diode Structure With an Ultra-Thin Dielectric Dopant Diffusion Barrier

2008 ◽  
Vol 55 (8) ◽  
pp. 2202-2211
Author(s):  
Wen-Jer Tsai ◽  
Tien-Fan Ou ◽  
Hsuan-Ling Kao ◽  
Erh-Kun Lai ◽  
Jyun-Siang Huang ◽  
...  
Keyword(s):  
Diffusion Barrier ◽  
Memory Cell ◽  
Diode Structure ◽  
Dopant Diffusion ◽  
Non Volatile Memory ◽  
Volatile Memory

MeF-RAM: A New Non-Volatile Cache Memory Based on Magneto-Electric FET

2022 ◽  
Vol 27 (2) ◽  
pp. 1-18
Author(s):  
Shaahin Angizi ◽  
Navid Khoshavi ◽  
Andrew Marshall ◽  
Peter Dowben ◽  
Deliang Fan
Keyword(s):  
High Speed ◽  
Memory Cell ◽  
Low Power Design ◽  
Evaluation Framework ◽  
Cache Memory ◽  
Array Architecture ◽  
Non Volatile Memory ◽  
Volatile Memory ◽  
Memory Applications ◽  
First Time

Magneto-Electric FET ( MEFET ) is a recently developed post-CMOS FET, which offers intriguing characteristics for high-speed and low-power design in both logic and memory applications. In this article, we present MeF-RAM , a non-volatile cache memory design based on 2-Transistor-1-MEFET ( 2T1M ) memory bit-cell with separate read and write paths. We show that with proper co-design across MEFET device, memory cell circuit, and array architecture, MeF-RAM is a promising candidate for fast non-volatile memory ( NVM ). To evaluate its cache performance in the memory system, we, for the first time, build a device-to-architecture cross-layer evaluation framework to quantitatively analyze and benchmark the MeF-RAM design with other memory technologies, including both volatile memory (i.e., SRAM, eDRAM) and other popular non-volatile emerging memory (i.e., ReRAM, STT-MRAM, and SOT-MRAM). The experiment results for the PARSEC benchmark suite indicate that, as an L2 cache memory, MeF-RAM reduces Energy Area Latency ( EAT ) product on average by ~98% and ~70% compared with typical 6T-SRAM and 2T1R SOT-MRAM counterparts, respectively.

A new multitime programmable non-volatile memory cell using high voltage NMOS

2018 ◽  
Vol 88-90 ◽  
pp. 169-172
Author(s):  
S. Xu ◽  
H. Wang ◽  
J. Wu ◽  
L. Zheng ◽  
J. Diao
Keyword(s):  
High Voltage ◽  
Memory Cell ◽  
Non Volatile Memory ◽  
Volatile Memory

Future Directions of Non-volatile Memory Technologies

2004 ◽  
Vol 830 ◽  
Author(s):  
Albert Fazio
Keyword(s):  
Flash Memory ◽  
Low Cost ◽  
Memory Cell ◽  
Current Status ◽  
Technology Scaling ◽  
Non Volatile Memory ◽  
Volatile Memory ◽  
Complex Structural ◽  
Flash Memory Cell ◽  
To Come

ABSTRACTIt expected that for many years to come, the majority of the nonvolatile memories shipped will be based on current mainstream flash technologies, which utilize transistor based charge storage memory cells and multi-level-cell concepts, for storing more than one logic bit in a single physical cell. Moore's law will continue to drive transistor based memory technology scaling but technology complexity will be increasing. In order to meet technology scaling, the mainstream transistor based flash technologies will start evolving to incorporate material and structural innovations. This paper will review the current status and discuss the approaches being explored to provide scaling solutions for future transistor based non-volatile memory products. Based on the introduction of material innovations, it is expected that the planar transistor based flash memory cell can scale into the 32nm node. Further, more complex, structural innovations will be required to maintain further scaling. New memory concepts, not relying on transistors as a basis of the memory cell, provide new opportunities for future low cost memories. Several of these new concepts will be summarized and contrasted with the mainstream transistor based flash memory technologies.

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