A comparative study of CdS thin films grown on ultra-thin glass substrates by RF magnetron sputtering and chemical bath deposition

Molybdenum disulfide (MoS2) thin films were deposited at different temperatures (150 °C, 225 °C, 300 °C, 375 °C, and 450 °C) on quartz glass substrates and silicon substrates using the RF magnetron sputtering method. The influence of deposition temperature on the structural, optical, electrical properties and deposition rate of the obtained thin films was investigated by X-ray diffraction (XRD), Energy Dispersive Spectrometer (EDS), Raman, absorption and transmission spectroscopies, a resistivity-measuring instrument with the four-probe method, and a step profiler. It was found that the MoS2 thin films deposited at the temperatures of 150 °C, 225 °C, and 300 °C were of polycrystalline with a (101) preferred orientation. With increasing deposition temperatures from 150 °C to 300 °C, the crystallization quality of the MoS2 thin films was improved, the Raman vibrational modes were strengthened, the deposition rate decreased, and the optical transmission and bandgap increased. When the deposition temperature increased to above 375 °C, the molecular atoms were partially combined with oxygen atoms to form MoO3 thin film, which caused significant changes in the structural, optical, and electrical properties of the obtained thin films. Therefore, it was necessary to control the deposition temperature and reduce the contamination of oxygen atoms throughout the magnetron sputtering process.

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Comparative Study of ZnO Thin Films Grown on Quartz Glass and Sapphire (001) Substrates by Means of Magnetron Sputtering and High-Temperature Annealing

Applied Sciences ◽

10.3390/app9214509 ◽

2019 ◽

Vol 9 (21) ◽

pp. 4509

Author(s):

Weijia Yang ◽

Fengming Wang ◽

Zeyi Guan ◽

Pengyu He ◽

Zhihao Liu ◽

...

Keyword(s):

Thin Films ◽

High Temperature ◽

Magnetron Sputtering ◽

Comparative Study ◽

Quartz Glass ◽

Photoelectron Spectroscopy ◽

Zno Thin Films ◽

High Temperature Annealing ◽

X Ray ◽

Glass Substrates

In this work, we reported a comparative study of ZnO thin films grown on quartz glass and sapphire (001) substrates through magnetron sputtering and high-temperature annealing. Firstly, the ZnO thin films were deposited on the quartz glass and sapphire (001) substrates in the same conditions by magnetron sputtering. Afterwards, the sputtered ZnO thin films underwent an annealing process at 600 °C for 1 h in an air atmosphere to improve the quality of the films. X-ray diffraction, scanning electron microscopy, atomic force microscopy, X-ray photoelectron spectroscopy (XPS), ultraviolet-visible spectra, photoluminescence spectra, and Raman spectra were used to investigate the structural, morphological, electrical, and optical properties of the both as-received ZnO thin films. The ZnO thin films grown on the quartz glass substrates possess a full width of half maximum value of 0.271° for the (002) plane, a surface root mean square value of 0.50 nm and O vacancies/defects of 4.40% in the total XPS O 1s peak. The comparative investigation reveals that the whole properties of the ZnO thin films grown on the quartz glass substrates are comparable to those grown on the sapphire (001) substrates. Consequently, ZnO thin films with high quality grown on the quartz glass substrates can be achieved by means of magnetron sputtering and high-temperature annealing at 600 °C.

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Synthesis and Characterization of Nb-Doped TiO2 Thin Films Prepared by RF Magnetron Sputtering

Advanced Materials Research ◽

10.4028/www.scientific.net/amr.1117.139 ◽

2015 ◽

Vol 1117 ◽

pp. 139-142 ◽

Cited By ~ 1

Author(s):

Marius Dobromir ◽

Radu Paul Apetrei ◽

A.V. Rogachev ◽

Dmitry L. Kovalenko ◽

Dumitru Luca

Keyword(s):

Thin Films ◽

Magnetron Sputtering ◽

Photoelectron Spectroscopy ◽

Rf Magnetron Sputtering ◽

X Ray ◽

Force Microscopy ◽

Glass Substrates ◽

Atomic Force ◽

Vis Spectroscopy ◽

Diffraction Patterns

Amorphous Nb-doped TiO2 thin films were deposited on (100) Si and glass substrates at room temperature by RF magnetron sputtering and a mosaic-type Nb2O5-TiO2 sputtering target. To adjust the amount of the niobium dopant in the film samples, appropriate numbers of Nb2O5 pellets were placed on the circular area of the magnetron target with intensive sputtering. By adjusting the discharge conditions and the number of niobium oxide pellets, films with dopant content varying between 0 and 16.2 at.% were prepared, as demonstrated by X-ray photoelectron spectroscopy data. The X-ray diffraction patterns of the as-deposited samples showed the lack of crystalline ordering in the samples. Surfaces roughness and energy band gap values increase with dopant concentration, as showed by atomic force microscopy and UV-Vis spectroscopy measurements.

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Microstructural and Properties of P-type Nickel Oxide (NiO) Thin Films Deposited by RF Magnetron Sputtering

Advanced Science Letters ◽

10.1166/asl.2018.12211 ◽

2018 ◽

Vol 24 (8) ◽

pp. 5866-5871 ◽

Cited By ~ 1

Author(s):

G Balakrishnan ◽

J. S. Ram Vinoba ◽

R Rishaban ◽

S Nathiya ◽

O. S. Nirmal Ghosh

Keyword(s):

Thin Films ◽

Magnetron Sputtering ◽

Nickel Oxide ◽

High Mobility ◽

Rf Magnetron Sputtering ◽

X Ray Diffraction ◽

Glass Substrates ◽

Type Semiconductor ◽

P Type ◽

Nio Films

Nickel oxide (NiO) thin films were deposited on glass substrates using the RF magnetron sputtering technique at room temperature. The Argon and oxygen flow rates were kept constant at 10 sccm and 5 sccm respectively. The films were annealed at various temperatures (RT-300 °C) and its influence on the microstructural, optical and electrical properties were investigated. The X-ray diffraction (XRD) investigation of NiO films indicated the polycrystallinity of the films with the (111), (200) and (220) reflections corresponding to the cubic structure of NiO films. The crystallite size of NiO films was in the range ~4–14 nm. The transmittance of the films increased from 20 to 75% with increasing annealed temperature. The optical band gap of the films was 3.6–3.75 eV range for the as-deposited and annealed films. The Hall effect studies indicated the p-type conductivity of films and the film annealed at 300 °C showed higher carrier concentration (N), high conductivity (σ) and high mobility (μ) compared to other films. These NiO films can be used as a P-type semiconductor material in the devices require transparent conducting films.

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Properties of CdS Thin Films Grown by Chemical Bath Deposition as a Function of Bath Temperature

Materials Science Forum ◽

10.4028/www.scientific.net/msf.609.243 ◽

2009 ◽

Vol 609 ◽

pp. 243-247 ◽

Cited By ~ 1

Author(s):

H. Moualkia ◽

S. Hariech ◽

M.S. Aida

Keyword(s):

Thin Films ◽

Optical Properties ◽

Band Gap ◽

Chemical Bath Deposition ◽

Bath Temperature ◽

Band Gap Energy ◽

X Ray Diffraction ◽

Glass Substrates ◽

Cds Thin Films ◽

Direct Band

The present work deals with the preparation and characterization of cadmium sulfur (CdS) thin films. These films are prepared by chemical bath deposition on the well cleaned glass substrates. The thickness of the samples was measured by using profilometer DEKTAK, structural and optical properties were studied by X-ray diffraction analysis, and UV-visible spectrophotometry. The optical properties of the films have been investigated as a function of temperature. The band gap energy and Urbach energy were also investigated as a function of temperature. From the transmittance data analysis the direct band gap ranges from 2.21 eV to 2.34 eV. A dependence of band gap on temperature has been observed and the possible raisons are discussed. Transmission spectra indicates a high transmission coefficient (75 %). Structural analysis revealed that the films showed cubic structure, and the crystallite size decreased at a higher deposition temperature.

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Influence of deposition temperature on the crystallinity of Al-doped ZnO thin films at glass substrates prepared by RF magnetron sputtering method

Superlattices and Microstructures ◽

10.1016/j.spmi.2011.04.002 ◽

2011 ◽

Vol 49 (6) ◽

pp. 644-653 ◽

Cited By ~ 105

Author(s):

Zhiyun Zhang ◽

Chonggao Bao ◽

Wenjing Yao ◽

Shengqiang Ma ◽

Lili Zhang ◽

...

Keyword(s):

Thin Films ◽

Magnetron Sputtering ◽

Deposition Temperature ◽

Rf Magnetron Sputtering ◽

Zno Thin Films ◽

Glass Substrates ◽

Doped Zno

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NO2 Sensing Properties of WO3 Thin Films Deposited by Rf-Magnetron Sputtering

Conference Papers in Science ◽

10.1155/2014/683219 ◽

2014 ◽

Vol 2014 ◽

pp. 1-5

Author(s):

Savita Sharma ◽

Monika Tomar ◽

Nitin K. Puri ◽

Vinay Gupta

Keyword(s):

Thin Films ◽

Magnetron Sputtering ◽

Gas Sensing ◽

Rf Magnetron Sputtering ◽

X Ray Diffraction ◽

Sensing Properties ◽

Glass Substrates ◽

Corning Glass ◽

Interdigital Electrodes ◽

Wo3 Thin Films

Tungsten trioxide (WO3) thin films were deposited by Rf-magnetron sputtering onto Pt interdigital electrodes fabricated on corning glass substrates. NO2 gas sensing properties of the prepared WO3 thin films were investigated by incorporation of catalysts (Sn, Zn, and Pt) in the form of nanoclusters. The structural and optical properties of the deposited WO3 thin films have been studied by X-ray diffraction (XRD) and UV-Visible spectroscopy, respectively. The gas sensing characteristics of all the prepared sensor structures were studied towards 5 ppm of NO2 gas. The maximum sensing response of about 238 was observed for WO3 film having Sn catalyst at a comparatively lower operating temperature of 200°C. The possible sensing mechanism has been highlighted to support the obtained results.

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