Implementation and Determining Low Power Analysis of Various Structures of SRAM Cell

2017 ◽  
Author(s):  
T. R. Lakshmidevi
Keyword(s):  
Low Power ◽  
Power Analysis ◽  
Sram Cell

Analysis of 6T SRAM Cell in Different Technologies

2017 ◽  
Vol MCSP2017 (01) ◽  
pp. 7-10 ◽  
Author(s):  
Subhashree Rath ◽  
Siba Kumar Panda
Keyword(s):  
Low Power ◽  
Data Storage ◽  
Low Voltage ◽  
Random Access ◽  
Storage Device ◽  
Cmos Process ◽  
Process Technology ◽  
Digital Devices ◽  
Noise Margin ◽  
Sram Cell

Static random access memory (SRAM) is an important component of embedded cache memory of handheld digital devices. SRAM has become major data storage device due to its large storage density and less time to access. Exponential growth of low power digital devices has raised the demand of low voltage low power SRAM. This paper presents design and implementation of 6T SRAM cell in 180 nm, 90 nm and 45 nm standard CMOS process technology. The simulation has been done in Cadence Virtuoso environment. The performance analysis of SRAM cell has been evaluated in terms of delay, power and static noise margin (SNM).

scholarly journals Design of Power Efficient 32-Bit Processing Unit

2018 ◽  
Vol 7 (2.16) ◽  
pp. 52
Author(s):  
Dharmavaram Asha Devi ◽  
Chintala Sandeep ◽  
Sai Sugun L
Keyword(s):  
Low Power ◽  
System Design ◽  
Power Analysis ◽  
Low Power Design ◽  
Design Flow ◽  
Processing Unit ◽  
Verilog Hdl ◽  
Power Efficient ◽  
Front End ◽  
Verification Process

The proposed paper is discussed about the design, verification and analysis of a 32-bit Processing Unit.  The complete front-end design flow is processed using Xilinx Vivado System Design Suite software tools and target verification is done by using Artix 7 FPGA. Virtual I/O concept is used for the verification process. It will perform 32 different operations including parity generation and code conversions: Binary to Grey and Grey to Binary. It is a low power design implemented with Verilog HDL and power analysis is implementedwith clock frequencies ranging from 10MhZ to 100GhZ. With all these frequencies, power analysis is verified for different I/O standards LVCMOS12, LVCMOS25 and LVCMOS33.  

scholarly journals Design of Low Power and Failure Free SRAM Cell Using Read Assist Circuits

2021 ◽  
Vol 1964 (6) ◽  
pp. 062018
Author(s):  
K Ramamohan Reddy ◽  
P Aruna Priya
Keyword(s):  
Low Power ◽  
Sram Cell

scholarly journals Restoration circuits for Low power Reduce Swing of 6T and 8T SRAM Cell With Improved Read and Write Margins

2021 ◽  
Vol 7 ◽  
pp. 22-34
Author(s):  
Vinod Kumar ◽  
Ram Murti Rawat
Keyword(s):  
Low Power ◽  
Static Noise Margin ◽  
Noise Margin ◽  
Equivalent Time ◽  
Sram Cell ◽  
Section Viii ◽  
Static Noise

A paper that examines the factors thataffect the Static Noise Margin (SNM) of a StaticRandom Access memories. At an equivalent time,they specialise in optimizing Read and Writeoperation of 8T SRAM cell which is best than 6TSRAM cell Using Swing Restoration Dual NodeVoltage. The read and Write operation and improveStability analysis. This SRAM technique on thecircuit or architecture level is required to improveread and write operation. during this paperComparative Analysis of 6T and 8T SRAM Cellswith Improved Read and Write Margin is completedfor 180 nm Technology with Cadence Virtuososchematics Tool.This Paper is organized as follows: thecharacteristics of 6T SRAM cell are described arerepresented in section VIII. In section IX, proposed8T SRAM cell is described. In section X, Standard8T SRAM cell is described. Section XI includes thesimulation results which give comparison of variousparameters of 6T and 8T SRAM cells. In Section XIISimulation Results and DC analysis and sectionXIII conclusion the work.

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