An Extensive Simulation Study of Gate Underlap Influence on Device Performance of Surrounding Gate In0.53Ga0.47As/InP Hetero Field Effect Transistor

2020 ◽  
Vol 10 (2) ◽  
pp. 157-165
Author(s):  
Soumya S. Mohanty ◽  
Urmila Bhanja ◽  
Guru P. Mishra
Keyword(s):  
Field Effect ◽  
Field Effect Transistor ◽  
Model Simulation ◽  
Drain Current ◽  
Oxide Semiconductor ◽  
Device Performance ◽  
Short Channel ◽  
Effect Transistor ◽  
Rf Performance ◽  
Gate Underlap

Background: This work describes the implementation of In0.53Ga0.47As/InP Surrounding Metal Gate Oxide Semiconductor Heterostructure Field Effect Transistor (SG MOSHFET) with gate underlap on both source and drain end to improve the DC and RF performance. Methods: A comprehensive and methodological investigation of DC and RF performance of III-V semiconductor are made for different underlap length varying from 5nm to 30nm on both sides of the device, which is used to mitigate the short channel issues to improve the device performance. Hydrodynamic model has been taken into consideration for the device simulation and it also includes Auger recombination and the Shockley–Read–Hall (SRH) model. Simulation is performed to analyze the various analog performance of device like drain current, surface potential, transconductance, threshold voltage, drain induced barrier lowering, off current, subthreshold slope, Ion/Ioff ratio, output conductance, intrinsic delay, energy-delay product, transconductance generation factor and radio frequency performance of device, like trans-frequency product and cut-off frequency. Results: From the simulation, it can be observed that an improved analog and RF performance is obtained at the optimum underlap length. Conclusion: This work delivers an idea for extended researchers to investigate different aspects of group III–V underlap MOSFETs.

Performance Evaluation of Silicon-Transition Metal Dichalcogenides Heterostructure Based Steep Subthreshold Slope-Field Effect Transistor Using Non-Equilibrium Green’s Function

2020 ◽  
Vol 18 (6) ◽  
pp. 468-476
Author(s):  
Prateek Kumar ◽  
Maneesha Gupta ◽  
Naveen Kumar ◽  
Marlon D. Cruz ◽  
Hemant Singh ◽  
...  
Keyword(s):  
Metal Oxide ◽  
Field Effect ◽  
Field Effect Transistor ◽  
Metal Oxide Semiconductor ◽  
Oxide Semiconductor ◽  
Molybdenum Disulphide ◽  
Short Channel ◽  
Tungsten Disulphide ◽  
Channel Effects ◽  
Effect Transistor

With technology invading nanometer regime performance of the Metal-Oxide-semiconductor Field Effect Transistor is largely hampered by short channel effects. Most of the simulation tools available do not include short channel effects and quantum effects in the analysis which raises doubt on their authenticity. Although researchers have tried to provide an alternative in the form of tunnel field-effect transistors, junction-less transistors, etc. but they all suffer from their own set of problems. Therefore, Metal-Oxide-Semiconductor Field-Effect Transistor remains the backbone of the VLSI industry. This work is dedicated to the design and study of the novel tub-type Metal-Oxide-Semiconductor Field-Effect Transistor. For simulation Non-Equilibrium Green’s Function is used as the primary model of simulation. The device is analyzed under different physical variations like work function, permittivity, and interface trap charge. This work uses Silicon-Molybdenum Disulphide heterojunction and Silicon-Tungsten Disulphide heterojunction as channel material. Results for both the heterojunctions are compared. It was analyzed that Silicon-Molybdenum Disulphide heterojunction provides better linearity and Silicon-Tungsten Disulphide heterojunction provides better switching speed than conventional Metal-Oxide-Semiconductor Field-Effect Transistor.

Quantum Modelling of Nanoscale Silicon Gate-All-Around Field Effect Transistor

2020 ◽  
Vol 64 ◽  
pp. 115-122
Author(s):  
P. Vimala ◽  
N.R. Nithin Kumar
Keyword(s):  
Analytical Model ◽  
Field Effect ◽  
Field Effect Transistor ◽  
Inversion Layer ◽  
Drain Current ◽  
Metal Oxide Semiconductor ◽  
Oxide Semiconductor ◽  
Effect Transistor ◽  
Quantum Mechanical Effects ◽  
Novel Devices

The paper introduces an analytical model for gate all around (GAA) or Surrounding Gate Metal Oxide Semiconductor Field Effect Transistor (SG-MOSFET) inclusive of quantum mechanical effects. The classical oxide capacitance is replaced by the capacitance incorporating quantum effects by including the centroid parameter. The quantum variant of inversion charge distribution function, inversion layer capacitance, drain current, and transconductance expressions are modeled by employing this model. The established analytical model results agree with the simulated results, verifying these models' validity and providing theoretical supports for designing and applying these novel devices.

scholarly journals Subthreshold Characteristics of a Metal-Oxide–Semiconductor Field-Effect Transistor with External PVDF Gate Capacitance

Crystals ◽  
2019 ◽  
Vol 9 (12) ◽  
pp. 673
Author(s):  
Jing-Jenn Lin ◽  
Ji-Hua Tao ◽  
You-Lin Wu
Keyword(s):  
Metal Oxide ◽  
Field Effect ◽  
Field Effect Transistor ◽  
Drain Current ◽  
Metal Oxide Semiconductor ◽  
Oxide Semiconductor ◽  
Subthreshold Slope ◽  
Ferroelectric Capacitor ◽  
In Series ◽  
Effect Transistor

An organic ferroelectric capacitor, using polyvinylidene difluoride (PVDF) as the dielectric, was fabricated. By connecting the PVDF capacitor in series to the gate of a commercially purchased metal-oxide–semiconductor field-effect transistor (MOSFET), drain current (ID)–drain voltage (VD) characteristics and drain current (ID)–gate voltage (VG) characteristics were measured. In addition, the subthreshold slopes of the MOSFET were determined from the ID–VG curves. It was found that the subthreshold slope could be effectively reduced by 23% of its original value when the PVDF capacitor was added to the gate of the MOSFET.

scholarly journals Portable Immunosensor Based on Extended Gate—Field Effect Transistor for Rapid, Sensitive Detection of Cancer Markers

Proceedings ◽  
2019 ◽  
Vol 15 (1) ◽  
pp. 32
Author(s):  
Baldacchini ◽  
Bizzarri ◽  
Montanarella ◽  
Pascali ◽  
Lorenzelli ◽  
...  
Keyword(s):  
Field Effect ◽  
Field Effect Transistor ◽  
Drain Current ◽  
Oxide Semiconductor ◽  
Sensitive Detection ◽  
High Current ◽  
Sensor Device ◽  
Current Variation ◽  
Gate Potential ◽  
Effect Transistor

We present an immunosensor for the rapid and sensitive detection of the p53 oncosuppressor protein and of its mutated form p53R175H, which are both valuable cancer biomarkers. The sensor is based on the accurate measurement of the source-drain current variation of a metal oxide semiconductor field-effect transistor, as due to the gate potential changing arising from charge release upon the selective capture of a biomarker by the partner immobilized on a sensing surface connected to the gate electrode. A suitable microelectronic system is implemented to combine high current resolution, which is needed to be competitive with standard immunoassays, with compact dimensions of the final sensor device.

scholarly journals Growth and Device Performance of AlGaN/GaN Heterostructure with AlSiC Precoverage on Silicon Substrate

2014 ◽  
Vol 2014 ◽  
pp. 1-6
Author(s):  
Jae-Hoon Lee ◽  
Jung-Hee Lee
Keyword(s):  
Threshold Voltage ◽  
Field Effect ◽  
Field Effect Transistor ◽  
Film Growth ◽  
Drain Current ◽  
Device Performance ◽  
Wetting Layer ◽  
Si Substrate ◽  
Effect Transistor ◽  
Gan Heterostructure

A crack-free AlGaN/GaN heterostructure was grown on 4-inch Si (111) substrate with initial dot-like AlSiC precoverage layer. It is believed that introducing the AlSiC layer between AlN wetting layer and Si substrate is more effective in obtaining a compressively stressed film growth than conventional Al precoverage on Si surface. The metal semiconductor field effect transistor (MESFET), fabricated on the AlGaN/GaN heterostructure grown with the AlSiC layer, exhibited normally on characteristics, such as threshold voltage of −2.3 V, maximum drain current of 370 mA/mm, and transconductance of 124 mS/mm.

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