Total-dose Effects on Power MOSFET in SEPIC Converter for Nanosatellite Applications

2020 ◽  
Vol 13 (5) ◽  
pp. 758-765
Author(s):  
Saranya Krishnamurthy ◽  
Ramani Kannan ◽  
Faidhi F.A. Mohamad ◽  
Muhamad S. Ahmad ◽  
Yusof Abdullah
Keyword(s):  
Duty Cycle ◽  
Gamma Ray ◽  
Input Voltage ◽  
Heavy Ion ◽  
Radiation Environment ◽  
Power Mosfet ◽  
Dose Effects ◽  
Total Dose Effects ◽  
Improved Performance ◽  
Output Characteristics

Background: Power converters used in nanosatellite application required to be more tolerant to radiations including proton, electron and heavy-ion radiation. Methods: A Single-Ended Primary Inductance Converter (SEPIC) is selected for the nanosatellite application because of the availability to step up and down the input voltage as well as having a non-inverting polarity between the input and output voltage. In this paper, remodeled SEPIC converter proposed with an improved performance at radiation environment to work for nanosatellite application. In addition, the analysis is carried out for the irradiated power MOSFET in SEPIC converter to check its impact on converter behavior. Results: Experiments conducted with the help of power MOSFET switch used in converter, irradiated with Cobalt60 gamma ray dose level from 50krad to 300krad and output characteristics analyzed by chancing the duty cycle of converter. Investigations shown that conventional converter output characteristics were virtually constant from 10% to 60% duty cycle when different radiated MOSFETs used in the converter. Conclusion: The electrical characteristics started to fluctuate at 60% duty cycle and onwards, while the remodeled converter circuit was less distorted when increasing the radiation dose.

scholarly journals Degradation of VDMOSFET by Heavy Ion Irradiations

2000 ◽  
Vol 22 (4) ◽  
pp. 265-282 ◽  
Author(s):  
C. Salame ◽  
F. Pelanchon ◽  
P. Mialhe
Keyword(s):  
Heavy Ion ◽  
Oxide Semiconductor ◽  
Physical Parameters ◽  
Electrical Characteristics ◽  
Vertical Diffusion ◽  
Parameters Extraction ◽  
Dose Effects ◽  
Total Dose Effects ◽  
Effect Transistor ◽  
Degradation Effect

This article focuses on the effect of the heavy ions irradiations on the electrical characteristics of VDMOSFET (Vertical Diffusion Metal Oxide Semiconductor Field Effect Transistor) devices. A summary of the total dose effects and the single event effects is covered to evaluate the experimental observations. Device degradations due to the hot carriers junction avalanche are studied by a physical parameters extraction method, leading to an understanding of the degradation processes. Results show that a protective resistor load can reduce the degradation effect in the device.

Total-dose effects of gamma-ray irradiation on CMOS/SIMOX devices

1987 ◽  
Vol 3 (6) ◽  
pp. 21-26 ◽  
Author(s):  
T. Ohno ◽  
K. Izumi ◽  
M. Shimaya ◽  
N. Shiono
Keyword(s):  
Total Dose ◽  
Gamma Ray ◽  
Dose Effects ◽  
Gamma Ray Irradiation ◽  
Total Dose Effects

Total dose effects on power-MOSFET switching converters

1998 ◽  
Vol 38 (12) ◽  
pp. 1935-1939 ◽  
Author(s):  
J.E Pizano ◽  
T.H Ma ◽  
J.O Attia ◽  
R.D Schrimpf ◽  
K.F Galloway ◽  
...  
Keyword(s):  
Total Dose ◽  
Switching Converters ◽  
Power Mosfet ◽  
Dose Effects ◽  
Total Dose Effects

scholarly journals Total Dose Effects on 4H-SiC Bipolar Junction Transistors

2017 ◽  
Vol 897 ◽  
pp. 579-582
Author(s):  
Sethu Saveda Suvanam ◽  
Luigia Lanni ◽  
Bengt Gunnar Malm ◽  
Carl Mikael Zetterling ◽  
Anders Hallén
Keyword(s):  
Total Dose ◽  
Detailed Analysis ◽  
Surface Recombination ◽  
Current Gain ◽  
Bipolar Junction Transistors ◽  
Displacement Damage ◽  
Base Current ◽  
Dose Effects ◽  
Order Of Magnitude ◽  
Total Dose Effects

In this work, total dose effects on 4H-SiC bipolar junction transistors (BJT) are investigated. Three 4H-SiC NPN BJT chips are irradiated with 3MeV protons with a dose of 1×1011, 1×1012 and 1×1013 cm-2, respectively. From the measured reciprocal current gain it is observed that 4H-SiC NPN BJT exposed to protons suffer both displacement damage and ionization, whereas, a traditional Si BJT suffers mainly from displacement damage. Furthermore, bulk damage introduction rates for SiC BJT were extracted to be 3.3×10-15 cm2, which is an order of magnitude lower compared to reported Si values. Finally, from detailed analysis of the base current at low injection levels, it is possible to distinguish when surface recombination leakage is dominant over bulk recombination.

Total Dose Effects in the 54HC Family of Microcircuits

1984 ◽  
Vol 31 (6) ◽  
pp. 1358-1363 ◽  
Author(s):  
Stan Ropiak ◽  
Kusum Sahu ◽  
Dave Cleveland
Keyword(s):  
Total Dose ◽  
Dose Effects ◽  
Total Dose Effects

(Invited) Total Dose Effects and Single Event Upsets During Radiation Damage of GaN and SiC

2021 ◽  
Vol 104 (7) ◽  
pp. 13-34
Author(s):  
Ani Khachatrian ◽  
Adrian Ildefonso ◽  
Zahabul Islam ◽  
Md Abu Jafar Rasel ◽  
Amanul Haque ◽  
...  
Keyword(s):  
Total Dose ◽  
Radiation Damage ◽  
Single Event ◽  
Single Event Upsets ◽  
Dose Effects ◽  
Total Dose Effects
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