scholarly journals Degradation of VDMOSFET by Heavy Ion Irradiations

2000 ◽  
Vol 22 (4) ◽  
pp. 265-282 ◽  
Author(s):  
C. Salame ◽  
F. Pelanchon ◽  
P. Mialhe
Keyword(s):  
Heavy Ion ◽  
Oxide Semiconductor ◽  
Physical Parameters ◽  
Electrical Characteristics ◽  
Vertical Diffusion ◽  
Parameters Extraction ◽  
Dose Effects ◽  
Total Dose Effects ◽  
Effect Transistor ◽  
Degradation Effect

This article focuses on the effect of the heavy ions irradiations on the electrical characteristics of VDMOSFET (Vertical Diffusion Metal Oxide Semiconductor Field Effect Transistor) devices. A summary of the total dose effects and the single event effects is covered to evaluate the experimental observations. Device degradations due to the hot carriers junction avalanche are studied by a physical parameters extraction method, leading to an understanding of the degradation processes. Results show that a protective resistor load can reduce the degradation effect in the device.

scholarly journals Sensing and Reliability Improvement of Electrostatic-Discharge Transient by Discrete Engineering for High-Voltage 60-V n-Channel Lateral-Diffused MOSFETs with Embedded Silicon-Controlled Rectifiers

Sensors ◽  
2018 ◽  
Vol 18 (10) ◽  
pp. 3340
Author(s):  
Shen-Li Chen ◽  
Yi-Cih Wu
Keyword(s):  
High Voltage ◽  
Field Effect Transistor ◽  
Electrostatic Discharge ◽  
Reference Sample ◽  
Metal Oxide Semiconductor ◽  
Oxide Semiconductor ◽  
Physical Parameters ◽  
Reliability Improvement ◽  
Drain Side ◽  
Effect Transistor

High-voltage n-channel lateral-diffused metal-oxide-semiconductor field-effect transistor (nLDMOS) components, fabricated by a TSMC 0.25-m 60-V bipolar-CMOS-DMOS (BCD) process with drain-side embedded silicon-controlled rectifier (SCR) of the n-p-n-arranged and p-n-p-arranged types, were investigated, in order to determine the devices’ electrostatic discharge (ESD)-sensing behavior and capability by discrete anode engineering. As for the drain-side n-p-n-arranged type with discrete-anode manners, transmission–line–pulse (TLP) testing results showed that the ESD ability (It2 value) was slightly upgraded. When the discrete physical parameter was 91 rows, the optimal It2 reached 2.157 A (increasing 17.7% compared with the reference sample). On the other hand, the drain-side SCR p-n-p-arranged type with discrete-anode manner had excellent SCR behavior, and its It2 values could be increased to >7 A (increasing >281.9% compared with the reference DUT). Moreover, under discrete anode engineering, the drain-side SCR n-p-n-arranged and p-n-p-arranged types had clearly higher ESD ability, except for the few discrete physical parameters. Therefore, using the anode discrete engineering, the ESD dissipation ability of a high-voltage (HV) nLDMOS with drain-side SCRs will have greater effectiveness.

Accuracy of the Energy Distribution of the Interface States at the SiO2/SiC Interface by Conductance Method

2016 ◽  
Vol 858 ◽  
pp. 437-440
Author(s):  
Munetaka Noguchi ◽  
Toshiaki Iwamatsu ◽  
Hiroyuki Amishiro ◽  
Hiroshi Watanabe ◽  
Shuhei Nakata ◽  
...  
Keyword(s):  
Energy Level ◽  
Energy Distribution ◽  
Conduction Band ◽  
Interface States ◽  
Oxide Semiconductor ◽  
Band Edge ◽  
Conduction Band Edge ◽  
Electrical Characteristics ◽  
Conductance Method ◽  
Effect Transistor

The electrical characteristics of the SiC metal-oxide-semiconductor field effect transistor (MOSFET) have been limited by large amount of states at the SiO2/SiC interface. In this study, the accuracy of the energy level of the interface states extracted by hypothetical high frequency extreme, which is conventionally used, is experimentally examined. Conductance measurements at low temperature between 65 K and 100 K reveal that the extracted energy distribution of the interface states at nitrided SiO2/SiC interface close to the conduction band edge depends on the measurement temperature. It is demonstrated that conductance method at 65K enables us more accurate evaluation of the interface states at the SiO2/SiC interface and found that the interface states density (Dit) of nitride SiO2/SiC interface is over 1013 cm-2eV-1 at energy level of 0.1 eV below the conduction band edge.

Effect of Al2O3 Deposition and Subsequent Annealing on Passivation of Defects in Ge-Rich SiGe-on-Insulator

2011 ◽  
Vol 470 ◽  
pp. 79-84
Author(s):  
Hai Gui Yang ◽  
Masatoshi Iyota ◽  
Shogo Ikeura ◽  
Dong Wang ◽  
Hiroshi Nakashima
Keyword(s):  
Field Effect Transistor ◽  
Surface Reaction ◽  
Hole Concentration ◽  
Metal Oxide Semiconductor ◽  
Oxide Semiconductor ◽  
Electrical Characteristics ◽  
Post Deposition Annealing ◽  
Back Gate ◽  
Effect Transistor ◽  
Post Deposition

Al2O3 deposition and subsequent post-deposition annealing (Al2O3-PDA) is proposed as an effective method to passivate electrically active defects in Ge-rich SiGe-on-insulator (SGOI) substrates. We found that Al2O3-PDA could not only suppress the surface reaction during Al-PDA, but could also effectively reduce the defect-induced acceptor and hole concentration in Ge-rich SGOI. Al2O3-PDA greatly improves the electrical characteristics of a back-gate metal-oxide-semiconductor field-effect transistor fabricated on Ge-rich SGOI.

Total-dose Effects on Power MOSFET in SEPIC Converter for Nanosatellite Applications

2020 ◽  
Vol 13 (5) ◽  
pp. 758-765
Author(s):  
Saranya Krishnamurthy ◽  
Ramani Kannan ◽  
Faidhi F.A. Mohamad ◽  
Muhamad S. Ahmad ◽  
Yusof Abdullah
Keyword(s):  
Duty Cycle ◽  
Gamma Ray ◽  
Input Voltage ◽  
Heavy Ion ◽  
Radiation Environment ◽  
Power Mosfet ◽  
Dose Effects ◽  
Total Dose Effects ◽  
Improved Performance ◽  
Output Characteristics

Background: Power converters used in nanosatellite application required to be more tolerant to radiations including proton, electron and heavy-ion radiation. Methods: A Single-Ended Primary Inductance Converter (SEPIC) is selected for the nanosatellite application because of the availability to step up and down the input voltage as well as having a non-inverting polarity between the input and output voltage. In this paper, remodeled SEPIC converter proposed with an improved performance at radiation environment to work for nanosatellite application. In addition, the analysis is carried out for the irradiated power MOSFET in SEPIC converter to check its impact on converter behavior. Results: Experiments conducted with the help of power MOSFET switch used in converter, irradiated with Cobalt60 gamma ray dose level from 50krad to 300krad and output characteristics analyzed by chancing the duty cycle of converter. Investigations shown that conventional converter output characteristics were virtually constant from 10% to 60% duty cycle when different radiated MOSFETs used in the converter. Conclusion: The electrical characteristics started to fluctuate at 60% duty cycle and onwards, while the remodeled converter circuit was less distorted when increasing the radiation dose.

scholarly journals Diode Physical Parameters for HEXFETs Characterization of Dose Effect

1998 ◽  
Vol 21 (3) ◽  
pp. 199-208
Author(s):  
E. Bendada ◽  
K. Raïs
Keyword(s):  
Parameter Extraction ◽  
Oxide Semiconductor ◽  
Dose Effect ◽  
Physical Parameters ◽  
Radiation Damages ◽  
Modeling Techniques ◽  
Radiation Induced ◽  
Effect Transistor ◽  
Induced Defects

Modeling techniques of P-N junctions have been applied for studying the physical parameters in metal-oxide semiconductor field-effect transistor structures. A parameter extraction method provides a precise description of the changes in conduction processes due to radiation damages in the integral body-drain junction. A large increase of the ideality factor and series resistance is related to radiation-induced defects.

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