Профилирование компонент подвижности вблизи гетерограниц тонких пленок кремния

In this paper, we proposed the method for profiling of the components of the effective mobility of charge carriers μeff defined by their scattering by surface phonons and by roughness at the film/insulator interfaces. The method is based on the controlled localization of charge carriers relative to the interface under study due to the coupling effect. The proposed method allows us to independently determine mobility components near different interfaces of films. The use of the proposed method for studying the mobility has allowed us to obtain information on the roughness of the interface and on the structural quality of the ultrathin (1–3-nm) layer of Si near the Si/buried oxide interface.

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Analysis of the effect of mechanical stress on the effective mobility of charge carriers in inversion layers of P/MOS structures

Microelectronics Journal ◽

10.1016/s0026-2692(83)80194-3 ◽

1983 ◽

Vol 14 (1) ◽

pp. 79

Keyword(s):

Mechanical Stress ◽

Charge Carriers ◽

Mobility Of Charge Carriers ◽

Effective Mobility ◽

Mos Structures

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Analysis of the effect of mechanical stress on the effective mobility of charge carriers in inversion layers of P/MOS structures

Microelectronics Reliability ◽

10.1016/0026-2714(81)90193-1 ◽

1981 ◽

Vol 21 (5) ◽

pp. 761

Keyword(s):

Mechanical Stress ◽

Charge Carriers ◽

Mobility Of Charge Carriers ◽

Effective Mobility ◽

Mos Structures

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Effect of Oxygen Dose Variation on the Simox Microstructure

MRS Proceedings ◽

10.1557/proc-446-207 ◽

1996 ◽

Vol 446 ◽

Author(s):

R. Datta ◽

V. Krishnamoorthy ◽

L.P. Allen ◽

R. Chandonnet ◽

M. Farley ◽

...

Keyword(s):

Depth Distribution ◽

Interface Roughness ◽

Oxide Interface ◽

Annealed State ◽

Buried Oxide ◽

Fundamental Understanding ◽

Effect Of Oxygen ◽

Dose Variation ◽

Defect Microstructure

AbstractThe effect of oxygen dose variation on the SIMOX SOI structure has been investigated extensively in this work. Keeping other implantation parameters constant, the dose has been varied from 0.2x1018cm–2 to 1.4xl018cm–2. Our studies show that a critical dose exists for a particular implant energy, below which a continuous buried oxide layer does not form. Further, the SiO2 precipitates enhance the pinning of defects in the as-implanted state which subsequently grow into threading dislocations. A dose window exists, where the dislocation density is a minimum.The oxygen depth distribution in the as-implanted and annealed state has been studied using SIMS. HRXRD measurements have been performed to reveal the strain state as a function of dose variation. The defect microstructure has been investigated using PTEM, XTEM and Secco Etching. AFM studies show the quality of the Si surface and Si/BOX (Buried OXide) interface roughness. This work gives us a fundamental understanding of the evolution of the defect microstructure and strain from the as-implanted to the annealed state using independent implantation parameter control.

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A Comprehensive Insight Towards Pharmaceutical Aspects of Graphene Nanosheets

Current Pharmaceutical Biotechnology ◽

10.2174/1389201021666200318131422 ◽

2020 ◽

Vol 21 (11) ◽

pp. 1016-1027 ◽

Cited By ~ 2

Author(s):

Fatemeh Emadi ◽

Arash Emadi ◽

Ahmad Gholami

Keyword(s):

Targeted Delivery ◽

Graphene Nanosheets ◽

High Surface ◽

High Surface Area ◽

Charge Carriers ◽

Pharmaceutical Sciences ◽

Pharmacokinetics And Pharmacodynamics ◽

Mobility Of Charge Carriers ◽

Graphene Derivatives ◽

Pharmacokinetic Properties

Graphene Derivatives (GDs) have captured the interest and imagination of pharmaceutical scientists. This review exclusively provides pharmacokinetics and pharmacodynamics information with a particular focus on biopharmaceuticals. GDs can be used as multipurpose pharmaceutical delivery systems due to their ultra-high surface area, flexibility, and fast mobility of charge carriers. Improved effects, targeted delivery to tissues, controlled release profiles, visualization of biodistribution and clearance, and overcoming drug resistance are examples of the benefits of GDs. This review focuses on the application of GDs for the delivery of biopharmaceuticals. Also, the pharmacokinetic properties and the advantage of using GDs in pharmaceutics will be reviewed to achieve a comprehensive understanding about the GDs in pharmaceutical sciences.

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ВЛИЯНИЕ ТВЕРДОФАЗНОЙ РЕКРИСТАЛЛИЗАЦИИ С ДВОЙНОЙ ИМПЛАНТАЦИЕЙ НА ПЛОТНОСТЬ СТРУКТУРНЫХ ДЕФЕКТОВ В УЛЬТРАТОНКИХ СЛОЯХ КРЕМНИЯ НА САПФИРЕ

Nanoindustry Russia ◽

10.22184/1993-8578.2020.13.3s.154.159 ◽

2020 ◽

Vol 96 (3s) ◽

pp. 154-159

Author(s):

Н.Н. Егоров ◽

С.А. Голубков ◽

С.Д. Федотов ◽

В.Н. Стаценко ◽

А.А. Романов ◽

...

Keyword(s):

Dislocation Density ◽

Solid Phase ◽

Modern Method ◽

Structural Defects ◽

Structural Quality ◽

Mos Transistors ◽

Ultrathin Layers ◽

Heteroepitaxial Layers ◽

Xrd And Tem

Высокая плотность структурных дефектов является основной проблемой при изготовлении электроники на гетероструктурах «кремний на сапфире» (КНС). Современный метод получения ультратонких структур КНС с помощью твердофазной эпитаксиальной рекристаллизации позволяет значительно снизить дефектность в гетероэпитаксиальном слое КНС. В данной работе ультратонкие (100 нм) слои КНС были получены путем рекристаллизации и утонения субмикронных (300 нм) слоев кремния на сапфире, обладающих различным структурным качеством. Плотность структурных дефектов в слоях КНС оценивалась с помощью рентгеноструктурного анализа и просвечивающей электронной микроскопии. Кривые качания от дифракционного отражения Si(400), полученные в ω-геометрии, продемонстрировали максимальную ширину на полувысоте пика не более 0,19-0,20° для ультратонких слоев КНС толщиной 100 нм. Формирование структурно совершенного субмикронного слоя КНС 300 нм на этапе газофазной эпитаксии обеспечивает существенное уменьшение плотности дислокаций в ультратонком кремнии на сапфире до значений ~1 • 104 см-1. Тестовые n-канальные МОП-транзисторы на ультратонких структурах КНС характеризовались подвижностью носителей в канале 725 см2 Вс-1. The high density of structural defects is the main problem on the way to the production of electronics on silicon-on-sapphire (SOS) heteroepitaxial wafers. The modern method of obtaining ultrathin SOS wafers is solid-phase epitaxial recrystallization which can significantly reduce the density of defects in the SOS heteroepitaxial layers. In the current work, ultrathin (100 nm) SOS layers were obtained by recrystallization and thinning of submicron (300 nm) SOS layers, which have various structural quality. The density of structural defects in the layers was estimated by using XRD and TEM. Full width at half maximum of rocking curves (ω-geometry) was no more than 0.19-0.20° for 100 nm ultra-thin SOS layers. The structural quality of 300 nm submicron SOS layers, which were obtained by CVD, depends on dislocation density in 100 nm ultrathin layers. The dislocation density in ultrathin SOS layers was reduced by ~1 • 104 cm-1 due to the utilization of the submicron SOS with good crystal quality. Test n-channel MOS transistors based on ultra-thin SOS wafers were characterized by electron mobility in the channel 725 cm2 V-1 s-1.

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Critical current densities and the structural quality of 3- and 4-μm-thick superconducting YBa2Cu3O7 layers synthesized using theex situprocess

Journal of Applied Physics ◽

10.1063/1.2773997 ◽

2007 ◽

Vol 102 (5) ◽

pp. 053902 ◽

Cited By ~ 10

Author(s):

Vyacheslav F. Solovyov ◽

Harold J. Wiesmann ◽

Masaki Suenaga

Keyword(s):

Critical Current ◽

Structural Quality ◽

Current Densities

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The Physical Context of Child Development

Current Directions in Psychological Science ◽

10.1177/0963721420980719 ◽

2021 ◽

Vol 30 (1) ◽

pp. 41-48

Author(s):

Gary W. Evans

Keyword(s):

Child Development ◽

Observational Studies ◽

Physiological Stress ◽

Personal Characteristics ◽

Adverse Outcomes ◽

Structural Quality ◽

Physical Context ◽

Physical Setting ◽

Physical Features

Child development reflects interactions between personal characteristics and the physical and social environment. Psychology, however, lacks analysis of physical features that influence child development. In this article, I describe a preliminary taxonomy of physical-setting characteristics that can influence child development, focusing on environmental stressors such as noise, crowding, and chaos along with structural quality of housing, day care, and schools. Adverse outcomes associated with suboptimal physical settings during childhood include cognitive and socioemotional difficulties along with chronic physiological stress. Both direct effects on the child as well as indirect effects occurring via significant persons surrounding the child are described. Methodological limitations, particularly reliance on observational studies, are a weakness in the current literature, but increasingly more rigorously obtained findings yield converging evidence of the effects of physical settings on child development.

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Kabuli and Apulian black Chickpea Milling By-Products as Innovative Ingredients to Provide High Levels of Dietary Fibre and Bioactive Compounds in Gluten-Free Fresh Pasta

Molecules ◽

10.3390/molecules26154442 ◽

2021 ◽

Vol 26 (15) ◽

pp. 4442

Author(s):

Michela Costantini ◽

Carmine Summo ◽

Michele Faccia ◽

Francesco Caponio ◽

Antonella Pasqualone

Keyword(s):

Bioactive Compounds ◽

Dietary Fibre ◽

Absorption Capacity ◽

Nutritional Deficiencies ◽

Structural Quality ◽

Gluten Free ◽

Food Industries ◽

Chickpea Flour ◽

Fresh Pasta

Gluten-free (GF) products, including pasta, are often characterised by nutritional deficiencies, such as scarce dietary fibre and excess of calories. Chickpea flour is increasingly being used by the food industries. Hulls, rich in dietary fibre and bioactive compounds, are discarded after milling. The aim of this work was to evaluate the quality features of short-cut GF fresh pasta added of hull (8% w/w) derived from kabuli (KH) or Apulian black (ABH) chickpeas, in comparison with control GF pasta prepared without hull. The enriched pasta, which could be labelled as “high fibre”, was characterised by a higher level of bioactive compounds and antioxidant activity than the control. ABH-enriched pasta showed the highest anthocyanins (33.37 ± 1.20 and 20.59 ± 0.11 mg/kg of cyanidin-3-O-glucoside on dry matter in raw and cooked pasta, respectively). Hull addition increased colour intensity and structural quality of GF pasta: ABH-enriched pasta had the lowest cooking loss and the highest water absorption capacity; KH-enriched pasta showed the highest firmness. No significant differences in sensory liking were found among the samples, except for “aftertaste”. Chickpea hull can be used as an innovative ingredient to produce potentially functional GF pasta, meeting the dietary needs of consumers without affecting quality.

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