Effect of Oxygen Dose Variation on the Simox Microstructure

1996 ◽  
Vol 446 ◽  
Author(s):  
R. Datta ◽  
V. Krishnamoorthy ◽  
L.P. Allen ◽  
R. Chandonnet ◽  
M. Farley ◽  
...  
Keyword(s):  
Depth Distribution ◽  
Interface Roughness ◽  
Oxide Interface ◽  
Annealed State ◽  
Buried Oxide ◽  
Fundamental Understanding ◽  
Effect Of Oxygen ◽  
Dose Variation ◽  
Defect Microstructure

AbstractThe effect of oxygen dose variation on the SIMOX SOI structure has been investigated extensively in this work. Keeping other implantation parameters constant, the dose has been varied from 0.2x1018cm–2 to 1.4xl018cm–2. Our studies show that a critical dose exists for a particular implant energy, below which a continuous buried oxide layer does not form. Further, the SiO2 precipitates enhance the pinning of defects in the as-implanted state which subsequently grow into threading dislocations. A dose window exists, where the dislocation density is a minimum.The oxygen depth distribution in the as-implanted and annealed state has been studied using SIMS. HRXRD measurements have been performed to reveal the strain state as a function of dose variation. The defect microstructure has been investigated using PTEM, XTEM and Secco Etching. AFM studies show the quality of the Si surface and Si/BOX (Buried OXide) interface roughness. This work gives us a fundamental understanding of the evolution of the defect microstructure and strain from the as-implanted to the annealed state using independent implantation parameter control.

scholarly journals Профилирование компонент подвижности вблизи гетерограниц тонких пленок кремния

2020 ◽  
Vol 54 (2) ◽  
pp. 124
Author(s):  
Э.Г. Зайцева ◽  
О.В. Наумова ◽  
Б.И. Фомин
Keyword(s):  
Coupling Effect ◽  
Charge Carriers ◽  
Structural Quality ◽  
Oxide Interface ◽  
Buried Oxide ◽  
Mobility Of Charge Carriers ◽  
Effective Mobility ◽  
Surface Phonons ◽  
Localization Of Charge Carriers

In this paper, we proposed the method for profiling of the components of the effective mobility of charge carriers μeff defined by their scattering by surface phonons and by roughness at the film/insulator interfaces. The method is based on the controlled localization of charge carriers relative to the interface under study due to the coupling effect. The proposed method allows us to independently determine mobility components near different interfaces of films. The use of the proposed method for studying the mobility has allowed us to obtain information on the roughness of the interface and on the structural quality of the ultrathin (1–3-nm) layer of Si near the Si/buried oxide interface.

scholarly journals effectiveness testing of l-carnitine on the quality of spermatozoa and testosterone hormone in white rats (Rattus norvegicus) feeding with high fat

2021 ◽  
Vol 4 (1) ◽  
pp. 102-109
Author(s):  
Ni Wayan Sukma Antari ◽  
Ida Ayu Manik Damayanti ◽  
Nadya Treesna Wulansari
Keyword(s):  
Rattus Norvegicus ◽  
Membrane Integrity ◽  
White Rats ◽  
Long Time ◽  
Statistical Program ◽  
High Doses ◽  
The One ◽  
Dose Variation ◽  
One Way Anova

This study aims to determine the increase in the quality of spermatozoa and testosterone after giving L-carnitine to white rats (Rattus norvegicus). This study was conducted by giving L-carnitine as a treatment for 42 days in white rats with a dose variation of 100 mg/kg bw, 150 mg/kg bw, and 200 mg/kg bw and user controls as a comparison. The variables observed in this study were the quality of spermatozoa, namely: morphology, motility, viability, membrane integrity, and seeing the levels of the hormone testosterone. The research data were processed using a computer statistical program (SPSS 22.0 for Windows) using the One Way Anova test. The results showed that giving high doses of L-carnitine supplements for a long time could cause decreased spermatozoa quality, namely: morphology, motility, viability, membrane integrity and decreased levels of the hormone testosterone.

Tem Studies of Silicon-Silicon Oxide Interface Roughness

1987 ◽  
Vol 105 ◽  
Author(s):  
Kyung-Ho Park ◽  
T. Sasaki ◽  
S. Matsuoka ◽  
M. Yoshida ◽  
M. Nakano
Keyword(s):  
Polycrystalline Silicon ◽  
Silicon Oxide ◽  
Thermally Grown Oxide ◽  
Interface Roughness ◽  
Silicon On Insulator ◽  
Oxide Surface ◽  
Bulk Single Crystal ◽  
Oxide Interface ◽  
Crystal Silicon ◽  
Cross Sectional

AbstractInterfaces between two kind of substrate, a bulk silicon wafer and a laser-recrystallized Silicon-On-Insulator (SOI), and its thermally grown oxide have been studied. High resolution transmission electron microscopy (HRTEM) of cross sectional specimen shows that the roughness at the interface is atomically flat and nearly uniform for the bulk single crystal silicon and silicon oxide, while being nonuniform and rough as much as 20 nm height for the recrystallized silicon and silicon oxide interface. Consideration of interface between recrystallized silicon and silicon oxide, and the oxide surface above, the observed roughness at the interface is due to original grain boundaries of polycrystalline silicon which was used as the material for the laser recrystallized silicon formation. It is also discussed HRTEM of the interface between polycrystalline silicon and silicon oxide.

EFFECT OF OXYGEN SCAVENGER APPLICATION ON THE QUALITY OF FRESH-CUT PINEAPPLE

2011 ◽  
pp. 459-466 ◽  
Author(s):  
M.N. Latifah ◽  
I. Ab Aziz ◽  
O. Zaulia ◽  
O. Fauziah ◽  
Y. Talib
Keyword(s):  
Oxygen Scavenger ◽  
Fresh Cut ◽  
Effect Of Oxygen

Effect of Coating Process Parameters on the Development of Residual Stresses in Ceramic Coatings

2019 ◽  
Author(s):  
Ali Gadelmoula ◽  
Khaled Al-Athel
Keyword(s):  
Residual Stresses ◽  
Process Parameters ◽  
Elevated Temperatures ◽  
Ceramic Coatings ◽  
Interface Roughness ◽  
Fe Model ◽  
Computational Framework ◽  
Scientists And Engineers ◽  
Coating Layers

Abstract Ceramic coatings are widely used in many engineering applications, especially applications related to components operating at elevated temperatures. One of the main issues relates to ceramic coatings is the development of residual stresses due to quenching and the thermal mismatch between the deposited coating layers and the substrate. In this work, a computational framework is developed to investigate the effect of various process parameters on the development of the residual stresses. The geometry of the coating layers and the interface roughness between the layers is first generated using SimCoat, a Monte Carlo based statistical algorithm that determines the effect of process parameters (droplet size, spraying speed, etc.) on the characteristics of the developed coating (coating thickness, porosity, etc.). An in-house code is used to convert the statistical data into a finite element (FE) model. Various FE models are generated with different process parameters, and the development of residual stresses is compared between them. The developed framework can be used by material scientists and engineers to predict the quality of the coating and optimize the process parameters to any specific application.

Optical Characterization of Silicon-On-Insulator

1996 ◽  
Vol 446 ◽  
Author(s):  
G. G. Li ◽  
A. R. Forouhi ◽  
I. Bloomer ◽  
A. Auberton-Herve ◽  
A. Wittkower
Keyword(s):  
Optical Constants ◽  
Crystalline Silicon ◽  
Interface Roughness ◽  
Silicon On Insulator ◽  
Native Oxide ◽  
Buried Oxide ◽  
A New Technique ◽  
Silicon Islands ◽  
Destructive Measurement ◽  
Non Destructive

AbstractA new technique, referred to as the “n&k Method”, is used to characterize the thin films comprising Silicon-on-Insulator (SOI). With the “n&k Method”, a non-destructive robust measurement of the thickness of both the crystalline silicon top-layer and the buried oxide under-layer, the spectra of refractive index (n), and extinction coefficient (k), and the smoothness of the interfaces is established. The “n&k Method” determines these quantities simultaneously and without multiple solutions for thickness. The non-destructive measurement of interface roughness between the buried oxide under-layer and the silicon substrate is associated with the presence of silicon islands. The native oxide that forms on SOI is also detected and measured. No initial user's input for thickness and optical constants are required in order to obtain these results. The spectra of optical constants are measured accurately and reliably.

Sign in / Sign up

Export Citation Format

Share Document