Raman study of defects in a GaAs buffer layer grown by low-temperature molecular beam epitaxy

ABSTRACTIn this work we demonstrate that photopumped quantum wellheterostructure lasers with excellent optical quality can be grown ontop of a LT GaAs buffer layer by molecular beam epitaxy. Hightemperature thermal annealing of these lasers blue-shifts the laseremission wavelengths but the presence/absence of a LT GaAs layerhad little effect on the overall laser thresholds. Also, to first order itwas not necessary to include an AlAs barrier layer to preventadverse effects (as has been necessary in the gate stack of MESFETs to prevent carrier compensation).

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Molecular beam epitaxy of high-quality CuI thin films on a low temperature grown buffer layer

Applied Physics Letters ◽

10.1063/5.0007389 ◽

2020 ◽

Vol 116 (19) ◽

pp. 192105 ◽

Cited By ~ 4

Author(s):

S. Inagaki ◽

M. Nakamura ◽

N. Aizawa ◽

L. C. Peng ◽

X. Z. Yu ◽

...

Keyword(s):

Thin Films ◽

Molecular Beam Epitaxy ◽

Low Temperature ◽

Buffer Layer ◽

Molecular Beam ◽

High Quality

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Two-dimensional growth of ZnO epitaxial films on c-Al2O3 (0001) substrates with optimized growth temperature and low-temperature buffer layer by plasma-assisted molecular beam epitaxy

Journal of Crystal Growth ◽

10.1016/j.jcrysgro.2004.10.016 ◽

2005 ◽

Vol 274 (3-4) ◽

pp. 418-424 ◽

Cited By ~ 33

Author(s):

Yeon-Sik Jung ◽

Oleg Kononenko ◽

Jin-Sang Kim ◽

Won-Kook Choi

Keyword(s):

Molecular Beam Epitaxy ◽

Low Temperature ◽

Buffer Layer ◽

Growth Temperature ◽

Molecular Beam ◽

Epitaxial Films ◽

Two Dimensional ◽

Dimensional Growth

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Morphology and surface reconstructions of m-plane GaN

MRS Proceedings ◽

10.1557/proc-743-l4.1 ◽

2002 ◽

Vol 743 ◽

Cited By ~ 1

Author(s):

C. D. Lee ◽

R. M. Feenstra ◽

J. E. Northrup ◽

L. Lymperakis ◽

J. Neugebauer

Keyword(s):

Molecular Beam Epitaxy ◽

Low Temperature ◽

Surface Morphology ◽

Buffer Layer ◽

Molecular Beam ◽

Structural Quality ◽

Surface Reconstructions ◽

Gan Buffer Layer

ABSTRACTM-plane GaN(1100) is grown by plasma assisted molecular beam epitaxy on ZnO(1100) substrates. A low-temperature GaN buffer layer is found to be necessary to obtain good structural quality of the films. Well oriented (1100) GaN films are obtained, with a slate like surface morphology. On the GaN(1100) surfaces, reconstructions with symmetry of c(2×2) and approximate “4×5” are found under N- and Ga-rich conditions, respectively. We propose a model for Ga-rich conditions with the “4×5” structure consisting of ≥ 2 monolayers of Ga terminating the GaN surface.

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Strain relaxation of the In0.53Ga0.47As epi-layer grown on a Si substrate using molecular beam epitaxy

CrystEngComm ◽

10.1039/c4ce01607f ◽

2014 ◽

Vol 16 (46) ◽

pp. 10721-10727 ◽

Cited By ~ 5

Author(s):

Fangliang Gao ◽

Lei Wen ◽

Yunfang Guan ◽

Jingling Li ◽

Xiaona Zhang ◽

...

Keyword(s):

Molecular Beam Epitaxy ◽

Low Temperature ◽

Buffer Layer ◽

Molecular Beam ◽

Strain Relaxation ◽

Si Substrate ◽

Structural Perfection ◽

High Degree

The as-grown In0.53Ga0.47As epi-layer grown on Si substrate by using low-temperature In0.4Ga0.6As buffer layer with in-situ annealing is of a high degree of structural perfection.

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Electro- and Photoluminescence from Ultrathin SImGEn Superlattices

MRS Proceedings ◽

10.1557/proc-256-83 ◽

1991 ◽

Vol 256 ◽

Cited By ~ 6

Author(s):

H. Presting ◽

U. Menczigar ◽

G. Abstreiter ◽

H. Kibbel ◽

E. Kasper

Keyword(s):

Molecular Beam Epitaxy ◽

Low Temperature ◽

Buffer Layer ◽

Molecular Beam ◽

Electrical Power ◽

Silicon Substrates ◽

Short Period ◽

Strained Layer Superlattices ◽

First Time ◽

Layer Composition

ABSTRACTP-i-n doped short-period SimGen strained layer superlattices (SLS) are grown on (100) silicon substrates by low temperature molecular beam epitaxy (300C°<∼Tg<∼400C°). The SLS's are grown with period lengths around 10 monolayers (ML) to a thickness of 250nm on a rather thin (50nm) homogeneous Si1−ybGeyb alloy buffer layer serving as strain symmetrizing substrate. Photoluminescence at T=5K is observed for various SimGen SLS samples, the strongest signal was found for a Si5 Ge5 SLS. Samples with identical SLS's but different buffer layer composition and thicknesses are grown to study the influence of strain on the PL. Electroluminescence (EL) at the same energy range is observed from mounted SimGen SLS mesa and waveguide diodes up to T=130K – for the first time reported in strain symmetrized short-period SimGen SLS. The intensity and peak positon of the EL signal was found to be dependent on the injected electrical power.

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Effect of Aluminum Nitride Buffer Layer Deposited by Molecular Beam Epitaxy on the Growth of Aluminum Nitride Thin Films Deposited by DC Magnetron Sputtering Technique

10.20944/preprints202107.0325.v1 ◽

2021 ◽

Author(s):

B. Riah ◽

Julien Camus ◽

Abdelhak Ayad ◽

Mohammad Rammal ◽

Raouia Zernadji ◽

...

Keyword(s):

Thin Films ◽

Molecular Beam Epitaxy ◽

Low Temperature ◽

Aluminum Nitride ◽

Magnetron Sputtering ◽

Epitaxial Growth ◽

Buffer Layer ◽

Molecular Beam ◽

Dc Magnetron Sputtering ◽

Aln Buffer

This paper reports the effect of silicon substrate orientation and aluminum nitride buffer layer deposited by molecular beam epitaxy on the growth of aluminum nitride thin films deposited by DC magnetron sputtering technique at low temperature. The structural analysis has revealed a strong (0001) fiber texture for both substrates Si (100) and (111) and a hetero-epitaxial growth on few nanometers AlN buffer layer grown by MBE on Si (111) substrate. SEM images and XRD characterization have shown an enhancement in AlN crystallinity thanks to AlN (MBE) buffer layer. Raman spectroscopy indicated that the AlN film was relaxed when it deposited on Si (111), in compression on Si (100) and under tension on AlN buffer layer grown by MBE/Si (111) substrates, respectively. The interface between Si (111) and AlN grown by MBE is abrupt and well defined; contrary to the interface between AlN deposited using PVD and AlN grown by MBE. Nevertheless, AlN hetero-epitaxial growth was obtained at low temperature (<250°C).

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Epitaxial Growth of AlN on 6H-SiC (1120) by Molecular-Beam Epitaxy and Effect of Low-Temperature Buffer Layer

MRS Proceedings ◽

10.1557/proc-743-l3.21 ◽

2002 ◽

Vol 743 ◽

Cited By ~ 3

Author(s):

N. Onojima ◽

J. Suda ◽

H. Matsunami

Keyword(s):

Molecular Beam Epitaxy ◽

Low Temperature ◽

Buffer Layer ◽

Molecular Beam ◽

High Energy ◽

Rf Plasma ◽

Epitaxial Relationship ◽

Raman Scattering Spectroscopy ◽

Force Microscopy ◽

Atomic Force

ABSTRACTAluminum nitride (AlN) has been grown on 6H-silicon carbide (SiC) substrates with the non-polar (1120) face using rf plasma-assisted molecular-beam epitaxy (rf-MBE). Reflection high-energy electron diffraction (RHEED) revealed that AlN and 6H-SiC (1120) had an exact epitaxial relationship, i.e., [1120]AlN|[1120]SiC and [0001]AlN∥[0001]SiC. From the result of microscopic Raman scattering spectroscopy, the stacking structure of the AlN epitaxial layer was suggested to be a 2H structure, not a 6H structure. A directly grown AlN layer and layer with AlN low-temperature (LT) buffer layer were investigated based on atomic force microscopy (AFM) and X-ray diffraction (XRD).

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