scholarly journals Одноэлектронный эмиссионно-инжекционный транспорт в микроструктуре с коллоидными квантовыми точками узкозонных полупроводников

2021 ◽  
Vol 55 (4) ◽  
pp. 319
Author(s):  
Н.Д. Жуков ◽  
М.В. Гавриков ◽  
В.Ф. Кабанов ◽  
И.Т. Ягудин
Keyword(s):  
Quantum Dots ◽  
Electron Transport ◽  
Coulomb Blockade ◽  
Tunneling Current ◽  
Exciting Light ◽  
Current Limitation ◽  
Current Voltage ◽  
Electron Mode ◽  
Current Voltage Characteristics ◽  
The One

By approximating the tunneling current-voltage characteristics (CVCs) of colloidal quantum dots (QDs) of narrow-gap semiconductors InSb and PbS, it is shown that in the one-electron mode, electron transport is determined by competing processes – emission from a quantum dot, injection into it and transport through it with current limitation by space charge. At voltages above 0.5 V, for single QD on the CVCs, regions of instability and current dip similar to the Coulomb gap were observed. Qualitative and numerical comparative estimates suggest that one-electron transport and current limitation similar to the Coulomb blockade are observed in the structure of a segregated set of quantum dots. Illumination of the sample with white light when measuring the CVCs breaks the Coulomb blockade, greatly increasing or decreasing the current, depending on the spectrum of the exciting light.

scholarly journals Одноэлектронный транспорт в коллоидных квантовых точках узкозонных полупроводников

2020 ◽  
Vol 46 (17) ◽  
pp. 47
Author(s):  
Н.Д. Жуков ◽  
М.В. Гавриков ◽  
Д.В. Крыльский
Keyword(s):  
Quantum Dots ◽  
Electron Transport ◽  
Scanning Tunneling Microscope ◽  
Coulomb Blockade ◽  
Scanning Tunneling ◽  
Light Illumination ◽  
Coulomb Gap ◽  
Current Voltage ◽  
Current Voltage Characteristics ◽  
White Light Illumination

Single-electron transport in the planar structure of colloidal quantum dots of InSb, PbS, CdSe semiconductors was studied using a scanning tunneling microscope. On the current – ​​voltage characteristics, sections of the current dip were observed similar to the Coulomb gap. Qualitative and numerical comparative estimates suggest that one-electron transport and a phenomenon similar to the Coulomb blockade are observed in the structure of the set of quantum dots. When measuring the current-voltage characteristics, the white-light illumination of the sample breaks the Coulomb blockade, and it can be expected that an instrument element based on such a structure will respond to individual photons. In the region of the Coulomb gap, current oscillations with frequencies in the terahertz range are possible.

scholarly journals Electron Spectrum and Tunneling Current of the Toroidal and Helical Graphene Nanoribbon-Quantum Dots Contact

2011 ◽  
Vol 2011 ◽  
pp. 1-5 ◽  
Author(s):  
Mikhail B. Belonenko ◽  
Nikolay G. Lebedev ◽  
Alexander V. Zhukov ◽  
Natalia N. Yanyushkina
Keyword(s):  
Quantum Dots ◽  
Dirac Equation ◽  
Density Of States ◽  
Electron Spectrum ◽  
Tunneling Current ◽  
Graphene Nanoribbon ◽  
Curved Space ◽  
Long Wave ◽  
Current Voltage ◽  
Current Voltage Characteristics

We study the electron spectrum and the density of states of long-wave electrons in the curved graphene nanoribbon based on the Dirac equation in a curved space-time. The current-voltage characteristics for the contact of nanoribbon-quantum dot have been revealed. We also analyze the dependence of the specimen properties on its geometry.

scholarly journals Исследование электрофизических свойств коллоидных квантовых точек антимонида индия

2020 ◽  
Vol 46 (7) ◽  
pp. 36
Author(s):  
А.И. Михайлов ◽  
В.Ф. Кабанов ◽  
М.В. Гавриков
Keyword(s):  
Quantum Dots ◽  
Field Emission ◽  
Indium Antimonide ◽  
Electron Tunneling ◽  
Tunneling Current ◽  
Film Structure ◽  
Current Transport ◽  
Experimental Conditions ◽  
Current Voltage ◽  
Current Voltage Characteristics

Abstract The mechanisms of current transport through indium antimonide quantum dots (QDs) have been examined by analyzing normalized differential tunneling current–voltage characteristics. Electron tunneling with the discrete spectrum of QDs taken into account has been studied. The positions of the first three levels of their electronic spectrum have been estimated. It has been demonstrated that the mechanism of the observed field emission from a film structure of colloidal indium antimonide QDs is characterized adequately by the Morgulis–Stratton theory in the range of electric-field intensities corresponding to the experimental conditions.

Mechanisms of negative differential resistance in glutamine-functionalized WS2 quantum dots

2021 ◽  
Author(s):  
Denice Feria ◽  
Sonia Sharma ◽  
Yu-Ting Chen ◽  
Zhi-Ying Weng ◽  
Kuo-Pin Chiu ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Negative Differential Resistance ◽  
Electronic Devices ◽  
Transition Metal Dichalcogenides ◽  
Differential Resistance ◽  
Voltage Range ◽  
Current Voltage ◽  
Metal Dichalcogenides ◽  
Current Voltage Characteristics ◽  
Memory Applications

Abstract Understanding the mechanism of the negative differential resistance (NDR) in transition metal dichalcogenides is essential for fundamental science and the development of electronic devices. Here, the NDR of the current-voltage characteristics was observed based on the glutamine-functionalized WS2 quantum dots (QDs). The NDR effect can be adjusted by varying the applied voltage range, air pressure, surrounding gases, and relative humidity. A peak-to-valley current ratio as high as 6.3 has been achieved at room temperature. Carrier trapping induced by water molecules was suggested to be responsible for the mechanism of the NDR in the glutamine-functionalized WS2 QDs. Investigating the NDR of WS2 QDs may promote the development of memory applications and emerging devices.

scholarly journals Symmetry selected quantum dynamics of few electrons in nanopillar transistors

2019 ◽  
Vol 9 (1) ◽  
Author(s):  
Yue-Min Wan ◽  
Heng-Tien Lin
Keyword(s):  
Quantum Number ◽  
Quantum Dynamics ◽  
Three Dimensional ◽  
Single Electron ◽  
Electron Hole ◽  
Current Voltage ◽  
Weak Symmetry ◽  
Current Voltage Characteristics ◽  
The One

AbstractStudy on single electron tunnel using current-voltage characteristics in nanopillar transistors at 298 K show that the mapping between the Nth electron excited in the central box ∼8.5 × 8.5 × 3 nm3 and the Nth tunnel peak is not in the one-to-one correspondence to suggest that the total number N of electrons is not the best quantum number for characterizing the quality of single electron tunnel in a three-dimensional quantum box transistor. Instead, we find that the best number is the sub-quantum number nz of the conduction z channel. When the number of electrons in nz is charged to be even and the number of electrons excited in the nx and ny are also even at two, the adding of the third electron into the easy nx/ny channels creates a weak symmetry breaking in the parity conserved x-y plane to assist the indirect tunnel of electrons. A comprehensive model that incorporates the interactions of electron-electron, spin-spin, electron-phonon, and electron-hole is proposed to explain how the excited even electrons can be stabilized in the electric-field driving channel. Quantum selection rules with hierarchy for the ni (i = x, y, z) and N = Σni are tabulated to prove the superiority of nz over N.

Functional Characteristics of QD-InAs/GaAs Heterostructures with Potential Barriers AlGaAs and GaAs

2018 ◽  
Vol 284 ◽  
pp. 182-187
Author(s):  
E.E. Blokhin ◽  
D.A. Arustamyan ◽  
L.M. Goncharova
Keyword(s):  
Quantum Dots ◽  
High Speed ◽  
Ion Beam ◽  
Inas Quantum Dots ◽  
Potential Barriers ◽  
Near Ir ◽  
Current Voltage ◽  
Ir Photodetectors ◽  
Current Voltage Characteristics ◽  
Beam Deposition

In this paper we present the results of investigation of heterostructures with an array of InAs quantum dots grown on GaAs substrates with GaAs and AlGaAs front barriers for high-speed near-IR photodetectors. The thickness of the barrier layers did not exceed 30 nm. It is shown that the ion-beam deposition method makes it possible to grow quantum dots with lateral dimensions up to 30 nm and 15 nm height. The spectral dependences of the external quantum efficiency and dark current-voltage characteristics are investigated.

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