scholarly journals Исследование электрофизических свойств коллоидных квантовых точек антимонида индия

2020 ◽  
Vol 46 (7) ◽  
pp. 36
Author(s):  
А.И. Михайлов ◽  
В.Ф. Кабанов ◽  
М.В. Гавриков
Keyword(s):  
Quantum Dots ◽  
Field Emission ◽  
Indium Antimonide ◽  
Electron Tunneling ◽  
Tunneling Current ◽  
Film Structure ◽  
Current Transport ◽  
Experimental Conditions ◽  
Current Voltage ◽  
Current Voltage Characteristics

Abstract The mechanisms of current transport through indium antimonide quantum dots (QDs) have been examined by analyzing normalized differential tunneling current–voltage characteristics. Electron tunneling with the discrete spectrum of QDs taken into account has been studied. The positions of the first three levels of their electronic spectrum have been estimated. It has been demonstrated that the mechanism of the observed field emission from a film structure of colloidal indium antimonide QDs is characterized adequately by the Morgulis–Stratton theory in the range of electric-field intensities corresponding to the experimental conditions.

Features of the Conduction Mechanism through an Indium Antimonide Quantum Dot in the Analysis of Tunneling Current-Voltage Characteristics

2020 ◽  
Vol 28 ◽  
pp. 130-135
Author(s):  
Maksim Vladimirovich Gavrikov ◽  
Vladimir Fedorovich Kabanov ◽  
Aleksandr Ivanovich Mikhailov
Keyword(s):  
Quantum Dot ◽  
Field Emission ◽  
Indium Antimonide ◽  
Conduction Mechanism ◽  
Electronic Conductivity ◽  
Tunneling Current ◽  
Characteristic Size ◽  
Methods Of Calculation ◽  
Current Voltage ◽  
Current Voltage Characteristics

The model representations of the mechanism of electronic conductivity through InSb nanoparticle was formulated and analyzed in accordance with the theory of field emission. Based on the analysis of tunneling current-voltage characteristics of various methods of calculation obtained a consistent value of characteristic size InSb nanoparticles in the range from 18 to 22 nm. Analysis tunneling current-voltage characteristics (dark and light (stationary light)) allowed us to evaluate the legitimacy of the formulated model representations.

scholarly journals Electron Spectrum and Tunneling Current of the Toroidal and Helical Graphene Nanoribbon-Quantum Dots Contact

2011 ◽  
Vol 2011 ◽  
pp. 1-5 ◽  
Author(s):  
Mikhail B. Belonenko ◽  
Nikolay G. Lebedev ◽  
Alexander V. Zhukov ◽  
Natalia N. Yanyushkina
Keyword(s):  
Quantum Dots ◽  
Dirac Equation ◽  
Density Of States ◽  
Electron Spectrum ◽  
Tunneling Current ◽  
Graphene Nanoribbon ◽  
Curved Space ◽  
Long Wave ◽  
Current Voltage ◽  
Current Voltage Characteristics

We study the electron spectrum and the density of states of long-wave electrons in the curved graphene nanoribbon based on the Dirac equation in a curved space-time. The current-voltage characteristics for the contact of nanoribbon-quantum dot have been revealed. We also analyze the dependence of the specimen properties on its geometry.

scholarly journals Одноэлектронный эмиссионно-инжекционный транспорт в микроструктуре с коллоидными квантовыми точками узкозонных полупроводников

2021 ◽  
Vol 55 (4) ◽  
pp. 319
Author(s):  
Н.Д. Жуков ◽  
М.В. Гавриков ◽  
В.Ф. Кабанов ◽  
И.Т. Ягудин
Keyword(s):  
Quantum Dots ◽  
Electron Transport ◽  
Coulomb Blockade ◽  
Tunneling Current ◽  
Exciting Light ◽  
Current Limitation ◽  
Current Voltage ◽  
Electron Mode ◽  
Current Voltage Characteristics ◽  
The One

By approximating the tunneling current-voltage characteristics (CVCs) of colloidal quantum dots (QDs) of narrow-gap semiconductors InSb and PbS, it is shown that in the one-electron mode, electron transport is determined by competing processes – emission from a quantum dot, injection into it and transport through it with current limitation by space charge. At voltages above 0.5 V, for single QD on the CVCs, regions of instability and current dip similar to the Coulomb gap were observed. Qualitative and numerical comparative estimates suggest that one-electron transport and current limitation similar to the Coulomb blockade are observed in the structure of a segregated set of quantum dots. Illumination of the sample with white light when measuring the CVCs breaks the Coulomb blockade, greatly increasing or decreasing the current, depending on the spectrum of the exciting light.

Mechanisms of negative differential resistance in glutamine-functionalized WS2 quantum dots

2021 ◽  
Author(s):  
Denice Feria ◽  
Sonia Sharma ◽  
Yu-Ting Chen ◽  
Zhi-Ying Weng ◽  
Kuo-Pin Chiu ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Negative Differential Resistance ◽  
Electronic Devices ◽  
Transition Metal Dichalcogenides ◽  
Differential Resistance ◽  
Voltage Range ◽  
Current Voltage ◽  
Metal Dichalcogenides ◽  
Current Voltage Characteristics ◽  
Memory Applications

Abstract Understanding the mechanism of the negative differential resistance (NDR) in transition metal dichalcogenides is essential for fundamental science and the development of electronic devices. Here, the NDR of the current-voltage characteristics was observed based on the glutamine-functionalized WS2 quantum dots (QDs). The NDR effect can be adjusted by varying the applied voltage range, air pressure, surrounding gases, and relative humidity. A peak-to-valley current ratio as high as 6.3 has been achieved at room temperature. Carrier trapping induced by water molecules was suggested to be responsible for the mechanism of the NDR in the glutamine-functionalized WS2 QDs. Investigating the NDR of WS2 QDs may promote the development of memory applications and emerging devices.

Functional Characteristics of QD-InAs/GaAs Heterostructures with Potential Barriers AlGaAs and GaAs

2018 ◽  
Vol 284 ◽  
pp. 182-187
Author(s):  
E.E. Blokhin ◽  
D.A. Arustamyan ◽  
L.M. Goncharova
Keyword(s):  
Quantum Dots ◽  
High Speed ◽  
Ion Beam ◽  
Inas Quantum Dots ◽  
Potential Barriers ◽  
Near Ir ◽  
Current Voltage ◽  
Ir Photodetectors ◽  
Current Voltage Characteristics ◽  
Beam Deposition

In this paper we present the results of investigation of heterostructures with an array of InAs quantum dots grown on GaAs substrates with GaAs and AlGaAs front barriers for high-speed near-IR photodetectors. The thickness of the barrier layers did not exceed 30 nm. It is shown that the ion-beam deposition method makes it possible to grow quantum dots with lateral dimensions up to 30 nm and 15 nm height. The spectral dependences of the external quantum efficiency and dark current-voltage characteristics are investigated.

Sign in / Sign up

Export Citation Format

Share Document