scholarly journals XXV Международный симпозиум Нанофизика и наноэлектроника", Нижний Новгород, 9-12 марта 2021 г. Влияние добавки хлорпентафторэтана в составе хлорсодержащей плазмы на скорость и характеристики профиля травления арсенида галлия

2021 ◽  
Vol 55 (10) ◽  
pp. 837
Author(s):  
А.И. Охапкин ◽  
С.А. Краев ◽  
Е.А. Архипова ◽  
В.М. Данильцев ◽  
О.И. Хрыкин ◽  
...  
Keyword(s):  
Gallium Arsenide ◽  
Inductively Coupled Plasma ◽  
Substrate Surface ◽  
Etching Rate ◽  
Plasma Chemical ◽  
Inductively Coupled ◽  
Initial Stage ◽  
Plasma Chemical Etching ◽  
Etching Profile ◽  
By Products

In this work, the dependence of plasma-chemical etching rate and the roughness of the surface of gallium arsenide crater on chloropentafluoroethane (C2F5Cl) concentration in a mixture with chlorine, forward power and etching duration were studied. Characteristics of GaAs etching crater were studied by white light interferometry and scanning electron microscopy. It is shown that C2F5Cl addition in chlorine-containing inductively coupled plasma led to a nonlinear change of gallium arsenide etching rate with time which can be explained by passivation of substrate surface at the initial stage by products of freon decay. Along with this, characteristics of the etching profile of GaAs are significantly improved. Forward power increase contributes to development of roughness, while the etching rate increases nonlinearly.

Plasma Chemical Etching of Gallium Arsenide in C2F5Cl-Based Inductively Coupled Plasma

2018 ◽  
Vol 52 (11) ◽  
pp. 1473-1476
Author(s):  
A. I. Okhapkin ◽  
P. A. Yunin ◽  
M. N. Drozdov ◽  
S. A. Kraev ◽  
E. V. Skorokhodov ◽  
...  
Keyword(s):  
Gallium Arsenide ◽  
Inductively Coupled Plasma ◽  
Chemical Etching ◽  
Plasma Chemical ◽  
Inductively Coupled ◽  
Plasma Chemical Etching

scholarly journals Application of plasma chemical treatment for manufacturing of instrument microstructures based on gallium nitride

2021 ◽  
Vol 2052 (1) ◽  
pp. 012057
Author(s):  
A V Zhelannov ◽  
B I Seleznev
Keyword(s):  
Gallium Nitride ◽  
Inductively Coupled Plasma ◽  
Chemical Etching ◽  
Smooth Surface ◽  
Plasma Source ◽  
Epitaxial Layers ◽  
Plasma Chemical ◽  
Inductively Coupled ◽  
Plasma Chemical Etching ◽  
Vertical Contact

Abstract The epitaxial layers of n-n+-GaN were processed by plasma-chemical etching using a Sentech SI 500 unit equipped with an inductively coupled plasma source. The regimes of gallium nitride processing in chlorine plasma have been established, which make it possible to remove epitaxial layers of the semiconductor down to a depth of 10 μm with a smooth surface. Based on the obtained processing results, prototype samples of Schottky diode microstructures with quasi-vertical contact geometry were manufactured. The effect of pretreatment on the characteristics of instrument microstructures is demonstrated.

Manufacture of High Aspect Ratio Bulk Titanium Micro-Parts by Inductively Coupled Plasma Etching

2008 ◽  
Author(s):  
Gang Zhao ◽  
Qiong Shu ◽  
Yue Li ◽  
Jing Chen
Keyword(s):  
Aspect Ratio ◽  
High Aspect Ratio ◽  
Inductively Coupled Plasma ◽  
Etching Rate ◽  
Sidewall Roughness ◽  
Inductively Coupled ◽  
Icp Etching ◽  
Novel Technology ◽  
Micro Parts ◽  
Etching Mask

A novel technology is developed to fabricate high aspect ratio bulk titanium micro-parts by inductively coupled plasma (ICP) etching. An optimized etching rate of 0.9 μm/min has been achieved with an aspect ratio higher than 10:1. For the first time, SU-8 is used as titanium etching mask instead of the traditional hard mask such as TiO2 or SiO2. With an effective selectivity of 3 and a spun-on thickness beyond 100 μm, vertical etching sidewall and low sidewall roughness are obtained. Ultra-deep titanium etching up to 200 μm has been realized, which is among the best of the present reports. Titanium micro-springs and planks are successfully fabricated with this approach.

Hydride Preconcentration for Inductively Coupled Plasma Optical Emission Spectrometry

1979 ◽  
Vol 33 (4) ◽  
pp. 399-404 ◽  
Author(s):  
R. C. Fry ◽  
M. B. Denton ◽  
D. L. Windsor ◽  
S. J. Northway
Keyword(s):  
Inductively Coupled Plasma ◽  
Optical Emission ◽  
Optical Emission Spectrometry ◽  
Emission Spectrometry ◽  
Inductively Coupled ◽  
Arsenic Detection ◽  
Plasma Optical Emission Spectrometry ◽  
Ultra Trace ◽  
Arsenic Determination ◽  
By Products

Studies are presented describing an improved application of the NaBH4 reduction of soluble arsenite to form arsine as a preconcentration approach for ultra-trace level arsenic determination by inductively coupled plasma optical emission spectrometry. Specialized analyte introduction techniques are described for elimination of reaction by-products that would normally extinguish a medium power plasma discharge. An approach is presented to minimize the need for background correction and facilitate a superior arsenic detection limit (≤0.03 ng/ml) in a relatively inexpensive 1.2 kW inductively coupled plasma system.

Sign in / Sign up

Export Citation Format

Share Document