scholarly journals Экспериментальные исследования модификации характеристик GaAs-структур с контактами Шоттки после воздействия быстрых нейтронов

Author(s):  
Е.В. Волкова ◽  
А.Б. Логинов ◽  
Б.А. Логинов ◽  
Е.А. Тарасова ◽  
А.С. Пузанов ◽  
...  

The electrophysical parameters and surface morphology of GaAs n/n- structures with Schottky contacts before and after neuron impact with an average energy of about 1 MeV were studied. Changes in the profiles of the concentration and mobility of electrons in the structures were determined by the C-V method measurements. The method of atomic force microscopy helped to find radiation defect clusters which appearing during impact. A complex approach to the determination of their parameters is proposed.

2013 ◽  
Vol 28 (2) ◽  
pp. 68-71 ◽  
Author(s):  
Thomas N. Blanton ◽  
Debasis Majumdar

In an effort to study an alternative approach to make graphene from graphene oxide (GO), exposure of GO to high-energy X-ray radiation has been performed. X-ray diffraction (XRD), X-ray photoelectron spectroscopy (XPS), and atomic force microscopy (AFM) have been used to characterize GO before and after irradiation. Results indicate that GO exposed to high-energy radiation is converted to an amorphous carbon phase that is conductive.


Author(s):  
Pavel Sergeevich Erokhin ◽  
◽  
Oleg Svyatoslavovich Kuznetsov ◽  
Nicholas Pavlovich Konnov ◽  
Nadezhda Andreevna Vidyaeva ◽  
...  

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