scholarly journals Fabrication of Skutterudite-Based Tubular Thermoelectric Generator

Energies ◽  
2020 ◽  
Vol 13 (5) ◽  
pp. 1106 ◽  
Author(s):  
Hanhwi Jang ◽  
Jong Bae Kim ◽  
Abbey Stanley ◽  
Suhyeon Lee ◽  
Yeongseon Kim ◽  
...  
Keyword(s):  
Contact Resistance ◽  
Thermoelectric Generator ◽  
Thermal Contact ◽  
Electrical Contact ◽  
Specific Contact Resistance ◽  
Electrical Contact Resistance ◽  
Plasma Sintering ◽  
Planar Substrate ◽  
Specific Contact ◽  
Tubular Thermoelectric Generator

The conversion efficiency of the thermoelectric generator (TEG) is adversely affected by the quality of thermal contact between the module and the heat source. TEGs with the planar substrate are not suitable for the curved heat sources. Several attempts have been made to tackle this issue by fabricating complex tubular-shaped TEGs; however, all efforts have been limited to low-temperature applications. Furthermore, the electrical contact resistance of the module is critical to achieving a high-power output. In this work, we developed the tubular TEG with significantly low specific contact resistance by optimizing the joining process. We show that the modified resistance welding (MRW) performed by spark plasma sintering (SPS) is an efficient joining method for the fabrication of the TE module, with high feasibility and scalability. This research seeks to suggest important design rules to consider when fabricating TEGs.

scholarly journals Методики исследования электрического контактного сопротивления в структуре металлическая пленка--полупроводник

2022 ◽  
Vol 56 (1) ◽  
pp. 31
Author(s):  
М.Ю. Штерн ◽  
И.С. Караваев ◽  
М.С. Рогачев ◽  
Ю.И. Штерн ◽  
Б.Р. Мустафоев ◽  
...  
Keyword(s):  
Contact Resistance ◽  
Electrical Resistance ◽  
Electrical Contact ◽  
Specific Contact Resistance ◽  
Electrical Contact Resistance ◽  
Semiconductor Interface ◽  
Tunneling Mechanism ◽  
Specific Contact ◽  
Transient Contact ◽  
Methods Of Measurement

The electrical contact resistance significantly affects the efficiency of thermoelements. In the case of high doped thermoelectric materials, the tunneling mechanism of conductivity prevails at metal-semiconductor interface, which makes it possible to obtain a contact resistance of less than 10-8 Ohm•m2. Low resistance values significantly complicate its experimental determination. Work present three techniques and a measuring stand for the investigation of contact resistance. The techniques are based on the measurement of the total electrical resistance, which consists of transient contact resistance and the resistance of the thermoelectric material with its subsequent exclusion. The developed techniques differ in the arrangement of the investigated contacts on the samples, in the methods of measurement and processing of the obtained results, and make it possible to determine the specific contact resistance of the order of 10-10 Ohm•m2.

Simultaneous Electrical and Thermal Modeling of a Contact-Type RF MEMS Switch

2003 ◽  
Author(s):  
Brian Jensen ◽  
Zhongde Wang ◽  
Kazuhiro Saitou ◽  
John L. Volakis ◽  
Katsuo Kurabayashi
Keyword(s):  
Contact Resistance ◽  
Direct Contact ◽  
Rf Mems ◽  
Bulk Material ◽  
Thermal Contact ◽  
Electrical Contact ◽  
Maximum Temperature ◽  
Electrical Contact Resistance ◽  
Rf Mems Switch ◽  
Mems Switch

Improving the power handling capability of direct contact RF MEMS switches requires a knowledge of conditions at the contact. This paper models the temperature rise in a direct contact RF MEMS switch, including the effects of electrical and thermal contact resistance. The maximum temperature in the beam is found to depend strongly on the power dissipation at the contact, with almost no contribution from dissipation due to currents in the rest of the switch. Moreover, the maximum temperature is found to exceed the limit for metal softening for a significant range of values of thermal and electrical contact resistance. Since local contact asperity temperature can be hundreds of degrees higher than the bulk material temperature modeled here, these results underscore the importance of understanding and controlling thermal and electrical contact resistance in the switch.

Paper 2: Surface Topography Effects in the Estimation of Thermal and Electrical Contact Resistance

1967 ◽  
Vol 182 (11) ◽  
pp. 81-91 ◽  
Author(s):  
F. C. Yip ◽  
J. E. S. Venart
Keyword(s):  
Contact Resistance ◽  
Surface Topography ◽  
Thermal Contact Resistance ◽  
Thermal Contact ◽  
Electrical Contact ◽  
Surface Waviness ◽  
Electrical Contact Resistance ◽  
Electrical Analogue ◽  
Analogue Study ◽  
Asperity Distribution

A method of determining the constrictional thermal contact resistance is proposed and discussed. Consideration is given to modelling the simultaneous effects of asperity distribution and roughness, and surface waviness. The resulting general analysis can be applied to any known surface topography in contact with another. Application and comparison utilizing the method are made to the results of an electrical analogue study.

Characterization of Thermal Contact Resistance in Metal Micro-Textured Thermal Interface Materials Using Electrical Contact Resistance Measurements

2010 ◽  
Vol 297-301 ◽  
pp. 1190-1198 ◽  
Author(s):  
R. Kempers ◽  
A.J. Robinson ◽  
A. Lyons
Keyword(s):  
Contact Resistance ◽  
Thermal Contact Resistance ◽  
Thermal Contact ◽  
Electrical Contact ◽  
Applied Pressure ◽  
Thermal Interface Material ◽  
Metal Foil ◽  
Electrical Contact Resistance ◽  
Thermal Interface ◽  
Thermally Conductive

A novel Metal Micro-Textured Thermal Interface Material (MMT-TIM) has been developed to address a number of shortcomings in conventional TIMs. This material consists of a thin metal foil with raised micro-scale features that plastically deform under an applied pressure thereby creating a continuous, thermally conductive, path between the mating surfaces. One of the difficulties in experimentally characterizing MMT-TIMs however, is distinguishing the bulk thermal resistance of the MMT-TIM from the thermal contact resistance that exists where it contacts the test apparatus. Since these materials are highly electrically conductive, this study attempts to employ electrical contact resistance measurements to estimate their thermal contact resistance. Tests using flat silver and gold specimens of known bulk thermal conductivity were used to develop a correlation between electrical and thermal contact resistance. This relationship was then employed to estimate the thermal contact resistance of a prototype silver MMT-TIM and indicates the thermal contact resistance accounts for approximately 10% of the measured thermal contact resistance. A number of issues related to this technique are discussed as well as its future outlook.

Fabrication and Evaluation of CoSb3/Electrode Thermoelectric Joints

2009 ◽  
Vol 631-632 ◽  
pp. 313-318 ◽  
Author(s):  
De Gang Zhao ◽  
Xiao Ya Li ◽  
Yan Hong Cai ◽  
Wan Jiang ◽  
Li Dong Chen
Keyword(s):  
Contact Resistance ◽  
Electrical Contact ◽  
Surface Zone ◽  
Electrical Contact Resistance ◽  
Element Analysis ◽  
Practical Applications ◽  
Plasma Sintering ◽  
Spark Plasma ◽  
Electrode Interface ◽  
Te Material

Joining of TE material to electrode is the key technique in the construction of TE device for the practical applications. In this study, a suitable alloy electrode was introduced into CoSb3-based element by means of spark plasma sintering (SPS). Finite element analysis showed that the maximum thermal residual stress appeared at the cylindrical surface zone close to the CoSb3/electrode interface. Microstructure of CoSb3/electrode was investigated by EPMA and the intermetallic compound (IMC) layers were found. The shear strength of CoSb3/electrode joints was tested and the results show that the joints have sufficient strength for reliability of TE device. Electrical contact resistance between CoSb3 and electrode was measured by means of four-probe technique. The results show that the contact resistance was minimal and below the 50μΩ.cm2, which meant the joint exhibited a good electrical contact. The high temperature reliability evaluation showed good thermal duration stability of the CoSb3/electrode joints.

Low Resistance Ti-Si-C Ohmic Contacts for 4H-SiC Power Devices Using Laser Annealing

2017 ◽  
Vol 897 ◽  
pp. 399-402 ◽  
Author(s):  
Milantha de Silva ◽  
Teruhisa Kawasaki ◽  
Takamaro Kikkawa ◽  
Shinichiro Kuroki
Keyword(s):  
Contact Resistance ◽  
Ohmic Contacts ◽  
Laser Annealing ◽  
Electrical Contact ◽  
Nickel Silicide ◽  
Specific Contact Resistance ◽  
Low Resistance ◽  
Specific Contact ◽  
Face Side ◽  
Non Equilibrium

Non-equilibrium laser silicidations for low-resistance ohmic contact to 4H-SiC C-face with Titanium was demonstrated. Ti is one of carbon-interstitial type metals. In a conventional nickel silicide (NiSi) electrode on SiC, a carbon agglomeration at the silicide/SiC interface occurs, and contact resistance becomes larger. For suppressing the carbon agglomeration, in this research, nanoseconds non-equilibrium laser annealing was introduced, and also Ti was introduced to form both silicide and carbide. Ti (75, 100 nm)/SiC and Ni (75, 100 nm)/SiC contacts were formed on C-face side of 4H-SiC substrates. Electrical contact properties were investigated after 40 nanoseconds pulse laser annealing in Ar ambient and rapid thermal annealing. As the result, In the case of laser annealing, the lowest specific contact resistance of 2.4×10-4 Ωcm2 was obtained in Ti (75 nm)/SiC sample in the laser power of 2.5 J/cm2.

Electrical Contact Resistance of Electroless Nickel to Nanocrystalline Silicon and the Fabrication of a Thermoelectric Generator

2013 ◽  
Vol 1553 ◽  
Author(s):  
V. Kessler ◽  
M. Dehnen ◽  
R. Chavez ◽  
M. Engenhorst ◽  
J. Stoetzel ◽  
...  
Keyword(s):  
Contact Resistance ◽  
Thermoelectric Generator ◽  
Silicon Nanoparticles ◽  
Electrical Contact ◽  
Electroless Nickel ◽  
Nanocrystalline Silicon ◽  
Electrical Contact Resistance ◽  
Transfer Length ◽  
Chemical Plating ◽  
Image Position

ABSTRACTWe present the fabrication of a high-temperature stable thermoelectric generator based on nanocrystalline silicon. Highly doped silicon nanoparticles were sintered by a current activated sintering technique to get nanocrystalline bulk silicon. The metalization of silicon was realized by (electro-)chemical plating and the specific electrical contact resistance ρc of the semiconductor-metal interface was measured by a transfer length method. Values as low as $\rho _C < 1 \cdot 10^{ - 6} \,\Omega cm^2 $ were measured. The metalized nanocrystalline silicon legs were sintered to metalized ceramic substrates using a silver-based sinter paste. The device figure of merit of the thermoelectric generator was determined by a Harman measurement with a maximum ZT of approximately 0.13 at 600 °C.

The Interplay of Nanocontact and Electrical Properties of ZnO and InP Nanowires and Polyaniline Nanofibers

2009 ◽  
Vol 1198 ◽  
Author(s):  
Yen-Fu Lin ◽  
Wen-Bin Jian
Keyword(s):  
Electron Beam ◽  
Electrical Properties ◽  
Contact Resistance ◽  
Ohmic Contacts ◽  
Electrical Contact ◽  
Schottky Contacts ◽  
Specific Contact Resistance ◽  
Electrical Contact Resistance ◽  
Polyaniline Nanofibers ◽  
Current Voltage

AbstractThe interface problems in nanomaterial based electronics play important roles. We have learned that the nanocontact, due to its reduced contact area, could give a high electrical contact resistance and a nonlinear current-voltage behavior though the specific contact resistance is in the same order of magnitude as that of macroscopic contacts. Through the current-voltage and temperature behaviors, the nanocontact properties could be categorized into Ohmic and Schottky types. The electrical properties of the nanowire based two-probe devices could be rationalized as two Ohmic contacts, one Ohmic and one Schottky contacts, and two back-to-back Schottky contacts. Moreover, the nanocontact could be treated as a one-dimensional disordered electron system for further studies. After the intrinsic nanowire and contact resistances are separated from each other, the electron transport and the carrier concentration of native doping in ZnO and InP nanowires can be determined. The nanowires are determined to have low carrier concentrations, implying a high sensitivity to light and gas. The contact and nanowire dominated two-probe devices are exposed to light and gas to identify the contact effects. In addition to the inorganic nanowires, the organic nanomaterials, the HCl-doped polyaniline nanofibers, can be analyzed by using the same approach. The dielectrophoresis technique is implemented to position nanofibers into an electron-beam lithographically patterned nanogap. To shine the electron-beam on contact areas, the organic/inorganic nanocontact resistance is reduced so as to probe the intrinsic electrical property of a single polyaniline nanofiber.

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