Исследование сильно легированных эпитаксиальных пленок n-3C-SiC, выращенных методом сублимации на основе полуизолирующих подложек 6H-SiC
Keyword(s):
X Ray
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Heavily doped 3C-SiC films based on semi-insulating 6H-SiC substrates were obtained by sublimation epitaxy. The structural perfection of the obtained samples was monitored by X-ray diffractometry. The measurements of the photoluminescence and Hall effect spectra have confirmed the rather high perfection of the obtained epitaxial layers.
2007 ◽
Vol 556-557
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pp. 179-182
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1991 ◽
pp. 1-8
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2005 ◽
Vol 483-485
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pp. 209-212
1988 ◽
Vol 3
(10)
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pp. 967-972
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1999 ◽
Vol 14
(7)
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pp. 2778-2782
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