scholarly journals Рентгеновский детектор на основе CdZnTe в режиме поперечной и продольной фотопроводимости

2022 ◽  
Vol 92 (1) ◽  
pp. 152
Author(s):  
Ю.М. Дикаев ◽  
А.А. Кудряшов
Keyword(s):  
Cross Section ◽  
Radiation Absorption ◽  
Semiconductor Detectors ◽  
Linear Coefficient ◽  
X Ray ◽  
Cdznte Detector ◽  
X Ray Absorption ◽  
Absorption Sites

The work considers "transverse" and "longitudinal" photoconductivity modes, regarding the direction of radiation, photoconductivity in semiconductor detectors of CdZnTe. Mathematical calculations were made from the representation of the internal area of the detector in the form of radiation absorption sites. The results of the calculations are compared with experimentally measured photocurrent of the detector with a cross section of 2x2 mm CdZnTe from the direction of its radiation by X-ray. From the ratio of photocurrents in the range of X-ray radiation energies 35-72 keV for these two cases, a linear coefficient of X-ray absorption by the CdZnTe detector is determined.

scholarly journals Anisotropy of X-ray Absorption Cross Section in CeCoGe3 Single Crystal

Crystals ◽  
2021 ◽  
Vol 11 (5) ◽  
pp. 544
Author(s):  
Andrei Rogalev ◽  
Fabrice Wilhelm ◽  
Elena Ovchinnikova ◽  
Aydar Enikeev ◽  
Roman Bakonin ◽  
...  
Keyword(s):  
Cross Section ◽  
Absorption Cross Section ◽  
Linear Dichroism ◽  
X Rays ◽  
Absorption Cross ◽  
X Ray ◽  
Measured Absorption ◽  
Linearly Polarized ◽  
X Ray Absorption ◽  
Absorption Edges

Absorption spectra of two orthogonal linearly polarized x-rays in a single CeCoGe3 crystal were measured at the ID12 beamline of the ESRF for the energies near the K-edges of Ge, Co and near the L23 edges of Ce. The X-ray natural linear dichroism (XNLD) was revealed in the vicinity of all the absorption edges, which indicates a splitting of electronic states in a crystalline field. Mathematical modelling in comparison with experimental data allowed the isotropic and anisotropic parts of atomic absorption cross section in CeCoGe3 to be determined near all measured absorption edges. The calculations also show that the “average” anisotropy of the cross section close to the Ge K-edge revealed in the experiment is less than the partial anisotropic contributions corresponding to Ge atoms in two different Wyckoff positions.

Multiple Scattering Calculations Applied to XAS: A Structure and Electronic Sensitive Tool

1991 ◽  
Vol 253 ◽  
Author(s):  
Philippe Sainctavit ◽  
J. Petiau
Keyword(s):  
Multiple Scattering ◽  
Cross Section ◽  
Absorption Cross Section ◽  
Scattering Theory ◽  
Spectral Features ◽  
Absorption Cross ◽  
Multiple Scattering Theory ◽  
X Ray ◽  
Sensitive Tool ◽  
X Ray Absorption

ABSTRACTWe present an application of multiple scattering theory with “muffin-tin” potentials to the calculation of X-ray absorption cross section. We have measured and calculated the K-edge spectra of atoms in compounds with zincblende structure : SiC, ZnS. We show that some spectral features can be precisely related to the local environnement around the absorbing atom.

X-Ray Absorption Studies of La2−xSrxCuO4 and Y1−xPrxBa2Cu3O7-δ

1987 ◽  
Vol 99 ◽  
Author(s):  
E. E. Alp ◽  
G. K. Shenoy ◽  
L. Soderholm ◽  
G. L. Goodman ◽  
D. G. Hinks ◽  
...  
Keyword(s):  
Rare Earth ◽  
Cross Section ◽  
Atomic Clusters ◽  
Oxide Superconductors ◽  
Absorption Cross ◽  
Edge Structure ◽  
X Ray ◽  
Absorption Studies ◽  
High Transition ◽  
X Ray Absorption

ABSTRACTThe question of valence of Cu and rare-earth atoms in the newly discovered oxide superconductors with high transition temperatures is crucial to the understanding of their electronic structure. We have measured the X-Ray Absorption Near Edge Structure (XANES) of Cu K transition and Pr Ljjj transition to obtain information on the valence of Cu, and Pr in La2−xSrxCuO4 and Y1−xPrxBa2Cu3O7-δ. We will present the experimental results, compare them with calculations of absorption cross-section for model atomic clusters, and discuss the valence of Cu as a function of oxygen concentration.

A Comparative Study of the Properties of Bandage-form Splinting Materials

1982 ◽  
Vol 11 (3) ◽  
pp. 125-134 ◽  
Author(s):  
J M Gill ◽  
P Bowker
Keyword(s):  
Mechanical Properties ◽  
Cross Section ◽  
Rectangular Cross Section ◽  
Weight Ratio ◽  
Physical And Mechanical Properties ◽  
Strength Development ◽  
X Ray ◽  
Three Point Bending ◽  
Plaster Of Paris ◽  
X Ray Absorption

The physical and mechanical properties of three new bandage-form splinting materials (Baycast, Crystona and Hexcelite) have been compared with those of plaster of Paris. Properties evaluated including working strength, rate of strength development, elastic modulus, exothermic heat and X-ray absorption coefficient. All mechanical testing was carried out on rectangular cross-section specimens in three-point bending. Whilst the three newer materials differed widely they all showed some advantages over plaster of Paris although none could be definitely stated as being superior in all respects. As regards mechanical properties, Baycast was found to be significantly stronger than the other materials and to have a higher strength to weight ratio. The difficulties in formulating laboratory tests which are clinically relevant are discussed and the need to consider other factors, such as ease of application and advantages to the patient, is emphasized.

Fluorescence yield detection: Why it does not measure the X-ray absorption cross section

1994 ◽  
Vol 92 (12) ◽  
pp. 991-995 ◽  
Author(s):  
F.M.F. de Groot ◽  
M.A. Arrio ◽  
Ph. Sainctavit ◽  
Ch. Cartier ◽  
C.T. Chen
Keyword(s):  
Cross Section ◽  
Absorption Cross Section ◽  
Fluorescence Yield ◽  
Absorption Cross ◽  
X Ray ◽  
X Ray Absorption

scholarly journals Compound Semiconductor Detectors for X-Ray Astronomy: Spectroscopic Measurements and Material Characteristics

1997 ◽  
Vol 487 ◽  
Author(s):  
M. Bavdaz ◽  
S. Kraft ◽  
A. Peacock ◽  
F. Scholze ◽  
M. Wedowski ◽  
...  
Keyword(s):  
Energy Range ◽  
Photon Energy ◽  
High Purity ◽  
Compound Semiconductors ◽  
High Energy ◽  
Compound Semiconductor ◽  
Semiconductor Detectors ◽  
X Ray ◽  
Cdznte Detector ◽  
First Results

AbstractThe use of some specific compound semiconductors in the fabrication of high energy X-ray detectors shows significant potential for X-ray astrophysics space missions. We are currently investigating three high purity crystals - CdZnTe, GaAs and TlBr - as the basis for future hard X-ray detectors (above 10 keV). In this paper we present the first results on CdZnTe and GaAs based detectors and evaluate the factors currently still constraining the performance.Energy resolutions (FWHM) of 0.9 keV and 1.1 keV at 14 keV and 60 keV, respectively, have been obtained with an epitaxial GaAs detector, while 0.7 keV and 1.5 keV FWHM were measured at the same energies with a CdZnTe detector. Based on these results it is clear, that the next generation of X-ray astrophysics missions now in the planning phase may well consider extending the photon energy range up to ∼100 keV by use of efficient detectors with reasonable spectroscopic capabilities.

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