scholarly journals Дефектная структура слоев GaAs, имплантированных ионами азота

Author(s):  
Н.А. Соболев ◽  
А.Е. Калядин ◽  
К.В. Карабешкин ◽  
Р.Н. Кютт ◽  
В.М. Микушкин ◽  
...  

AbstractStructural defects formed in epitaxial GaAs layers as a result of 250-keV N^+ ion implantation to doses within 5 × 10^14–5 × 10^16 cm^–2 have been studied by the X-ray diffraction (XRD) and transmission electron microscopy techniques. No amorphization of the ion-implanted layer took place in the entire dose range studied. The implantation to doses of 5 × 10^14 and 5 × 10^15 cm^–2 led to the appearance of an additional peak on XRD curves, which was related to the formation of a stressed GaAs layer with positive deformation arising due to the formation of point-defect clusters. The implantation to a dose of 5 × 10^16 cm^–2 led to the formation of a dense structure of extended defects in the implanted layer, which was accompanied by the relaxation of macrostresses to the initial state.

2012 ◽  
Vol 2012 ◽  
pp. 1-8
Author(s):  
Hairui Wang ◽  
Hao Chen ◽  
Zhen Xu ◽  
Sibing Wang ◽  
Baozong Li ◽  
...  

Mesoporous silica nanospheres were prepared using a chiral cationic low-molecular-weight amphiphile and organic solvents such as toluene, cyclohexane, and tetrachlorocarbon through a dual-templating approach. X-ray diffraction, nitrogen sorption, field emission scanning electron microscopy, and transmission electron microscopy techniques have been used to characterize the mesoporous silicas. The volume ratio of toluene to water plays an important role in controlling the morphologies and the pore architectures of the mesoporous silicas. It was also found that mesoporous silica nanoflakes can be prepared by adding tetrahydrofuran to the reaction mixtures.


2000 ◽  
Vol 15 (10) ◽  
pp. 2187-2194 ◽  
Author(s):  
M. F. Casula ◽  
A. Corrias ◽  
G. Paschina

The sol-gel method was used to prepare nickel oxide–silica and nickel–silica nanocomposite materials and the corresponding silica matrices. Different drying conditions were used to obtain aerogel and xerogel materials. The samples were characterized by thermal analysis, x-ray diffraction, N2–physisorption, transmission electron microscopy techniques, and infrared spectroscopy. Aerogel samples had a much higher surface area than the xerogel samples; moreover, different supercritical drying conditions gave rise to a different porous structure, which influenced the size and distribution of the nanoparticles in the matrix.


2008 ◽  
Vol 1126 ◽  
Author(s):  
Ulises Amador ◽  
Susana García-Martín ◽  
Ainhoa Morata-Orrantia ◽  
Juan Rodríguez-Carvajal ◽  
Miguel Ángel Alario-Franco

AbstractMaterials of the La2/3-xLi3xTiO3–family have been studied by selected area electron diffraction (SAED), high-resolution transmission electron microscopy (HRTEM), powder synchrotron X-ray diffraction and powder neutron diffraction. HRTEM showed that the materials have a complex domain-microstructure. The size and shape of the domains have been obtained from synchrotron X-ray diffraction data; besides, other extended defects such as strains and compositional fluctuations have been detected. The complementary use of local (SAED and HRTEM) and average (SXRD and NPD) techniques have allowed us to propose a model to refine the crystal structure of these oxides also accounting for their microstructure. All these materials have a perovskite-related structure with a diagonal unit cell (≈√2ap x √2ap x 2ap) as a consequence of the tilting of the TiO6 octahedra. Ordering of lanthanum and lithium ions and vacancies along the 2ap-axis, as well as displacements of titanium ions from the centre of the octahedra, have been determined. The Li+ ions present a distorted square planar coordination and are located in interstitial positions of the structure, which could explain the very high ionic conductivity of this type of materials. The lithium conductivity depends on the oxide composition and its crystal microstructure, which varies with the thermal treatment of the sample.


2021 ◽  
Vol 2 (1) ◽  
Author(s):  
Naotaka Tomioka ◽  
Luca Bindi ◽  
Takuo Okuchi ◽  
Masaaki Miyahara ◽  
Toshiaki Iitaka ◽  
...  

AbstractA dense magnesium iron silicate polymorph with a structure intermediate between olivine, ringwoodite, and wadsleyite was theoretically predicted about four decades ago. As this group of minerals constitute the major component of shocked meteorites, constraining their transitional forms and behaviour is of potential importance for understanding impact events on their parent bodies. Here we use high-resolution transmission electron microscopy techniques and single-crystal X-ray diffraction analyses to identify naturally occurring examples of this mineral – recently named poirierite – in shocked chondritic meteorites. We observe nanoscale lamellar poirierite topotactically intergrown within wadsleyite, and additionally within ringwoodite as recently reported. Our results confirm the intermediate structure of poirierite and suggest it might be a relay point in the shear transformations between its polymorphs. We propose that poirierite formed during rapid decompression at relatively low temperature in retrograde shock metamorphism of the meteorites.


1968 ◽  
Vol 12 ◽  
pp. 236-248 ◽  
Author(s):  
Roy G. Baggerly ◽  
Regis M. N. Pelloux

AbstractThe recovery and recrystallization of cold rolled copper during reverse bending fatigue at room temperature has been studied with x-ray diffraction, optical microscopy and transmission electron microscopy techniques. Recovery of x-ray line breadth was recorded as a function of number of cycles at all strain amplitudes investigated. Recrystallization was observed to take place only at small strain amplitudes (life of 106 to 107 cycles). The rate of nucleation of the recrystallized grains increases with increasing strain amplitude and is a linear function of the number of cycles. The formation and growth of the grains was confined to regions near the surface of the specimen. Since comparable thermal recovery occurs at approximately 435°F it is concluded that the dynamic generation and migration of numerous point defects during fatigue is responsible for the room temperature recrystallization.


1995 ◽  
Vol 399 ◽  
Author(s):  
M.R. Bruni ◽  
G. Padeletti ◽  
M.G. Simeone ◽  
L. Francesio ◽  
P. Franzosi ◽  
...  

ABSTRACTInAs single layers were grown by Molecular Beam Epitaxy on nominally (001) oriented GaAs substrates at growth temperatures ranging from 350 °C to 500 °C and thicknesses between 1 nm and 6 μm. A systematic study of the influence of growth temperature and thickness on crystal defects and surface morphology is discussed by comparing High Resolution X-Ray Diffraction, Transmission Electron Microscopy and Atomic Force Microscopy investigations.Surface hexagonal shaped holes were observed to develop at the lowest temperatures starting from an heterolayer thickness of 50 nm. Both misfit and threading dislocations were revealed; moreover the correlation between hexagonal shaped surface holes and mixed dislocations, with the component of the Burgers vector (b) along the growth axis larger than the minimum interatomic distance, is discussed. The holes increase in size and decrease in density by increasing the layer thickness. An almost complete surface planarization is observed at a thickness of 6 μm by increasing the growth temperature up to 500 °C.


2020 ◽  
Vol 27 (10) ◽  
pp. 1950216
Author(s):  
SHEHLA HONEY ◽  
JAMIL ASIM ◽  
ISHAQ AHMAD ◽  
TINGKAI ZHAO ◽  
MAAZA MALEK ◽  
...  

In this paper, formation of defects/defect clusters in nickel nanowires (Ni-NWs) due to interaction of a 60 kilo-electron-volt (keV) beam of proton (H[Formula: see text] ions is studied. Ni-NWs are exposed to various fluencies of H[Formula: see text] ions ranging between [Formula: see text] and [Formula: see text][Formula: see text]ions/cm2. The analysis of pristine and H[Formula: see text] ion-irradiated Ni-NWs samples is mainly done using transmission electron microscopy (TEM) and X-ray diffraction (XRD) techniques. Stopping range of ions in matter (SRIM) simulation software is employed to verify the production of defect clusters in Ni-NWs theoretically. Furthermore, insight of creation of defects in Ni-NWs due to interaction of low energy H[Formula: see text] ions in keV range is made using the theory of collision cascade effect. The study of defect clusters induced in Ni-NWs under H[Formula: see text] ions beam irradiation is essential for application of Ni-NW-based nanodevices in harsh environment containing plenty of H[Formula: see text] ions such as for use in spacecraft equipped for space missions.


2020 ◽  
Vol 1 (1) ◽  
Author(s):  
Machteld E. Kamminga ◽  
Maria Batuk ◽  
Joke Hadermann ◽  
Simon J. Clarke

Abstract Topological superconductivity is of great contemporary interest and has been proposed in doped Bi2Se3, in which electron-donating atoms such as Cu, Sr or Nb have been intercalated into the Bi2Se3 structure. For NbxBi2Se3, with Tc ~ 3 K, it is assumed in the literature that Nb is inserted in the van der Waals gap. However, in this work an alternative origin for the superconductivity in Nb-doped Bi2Se3 is established. In contrast to previous reports, it is deduced that Nb intercalation in Bi2Se3 does not take place. Instead, the superconducting behaviour in samples of nominal composition NbxBi2Se3 results from the (BiSe)1.10NbSe2 misfit phase that is present in the sample as an impurity phase for small x (0.01 ≤ x ≤ 0.10) and as a main phase for large x (x = 0.50). The structure of this misfit phase is studied in detail using a combination of X-ray diffraction and transmission electron microscopy techniques.


2009 ◽  
Vol 1160 ◽  
Author(s):  
Larysa Khomenkova ◽  
Christian Dufour ◽  
Pierre-Eugène Coulon ◽  
Caroline Bonafos ◽  
Fabrice Gourbilleau

AbstractHfO2-based layers prepared by RF magnetron sputtering were studied by X-ray diffraction, infrared absorption spectroscopy and transmission electron microscopy techniques. The effect of the deposition parameters and post-deposition annealing treatment on the properties of the layers was investigated. The amorphous-crystalline transformation of pure HfO2 layers is observed to be stimulated by annealing treatment at 800 ° C. It was found that the incorporation of silicon in HfO2 matrix allows to prevent crystallization of the layers and to shift the crystallization temperature to values up to 900 °C.


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