scholarly journals Эффект саморазогрева в беспереходных вертикальных полевых транзисторах на основе структур "кремний на изоляторе" с различной формой базы

Author(s):  
А.Э. Атамуратов ◽  
Б.О. Жаббарова ◽  
М.M. Халиллоев ◽  
A. Юсупов

In this work it is simulated the self-heating effect in nanoscale Silicon on Insulator Junctionless FinFET transistor with fin cross section in rectangular, trapeze and triangle form. It is shown that for considered transistor structure the lattice temperature in the middle of the channel is lower than at lateral sides, near source and drain. Besides it at the same conditions the lattice temperature depends on shape of channel cross section too.

Electronics ◽  
2021 ◽  
Vol 10 (18) ◽  
pp. 2241
Author(s):  
Jia-He Zhu ◽  
Da-Wei Wang ◽  
Wen-Sheng Zhao ◽  
Jia-Yun Dai ◽  
Gaofeng Wang

In this paper, an innovative vertical MOSFET based on through-oxide via (TOV) technology is proposed for silicon-on-insulator (SOI)-based monolithic 3-D ICs. The proposed vertical MOSFET is investigated numerically. It was found that SOI can effectively reduce the parasitic capacitance, leakage current, power consumption, as well as suppress the pulse current interference of the substrate. The simulated results indicate that the proposed MOSFET possesses excellent characteristics in saturation current over 1500 μA, sub-threshold swing of 69 mV/dec, and on/off current ratio of 1.28 × 1011. Moreover, as temperature is a critical factor for the performance degradation of semiconductor devices, electrothermal simulations are conducted to predict the influence of the self-heating effect on device characteristics. The results show that device characteristics slightly deteriorate, but can still acceptable in their applications.


To solve the problems of high temperature microelectronics the influence of the self heating effect on the IV dates partially depleted submicron silicon–on-insulator CMOS transistor in the ambient temperature range from 525 K to 650 K is discussed. Approach consists in combination of experimental data and of computational simulating results. For simulation of electrothermal characteristics of SOI CMOS transistor is considered three-layered structure. Temperature distribution is calculated numerically using iterative algorithm in conjunction with software COMSOL Multiphysics. I-V dates of SOI CMOS transistors are calculated by means of two-dimensional models for n-and p-channel transistors of Sentaurus TCAD developed in the system of instrument and technological modelling. TCAD models are calibrated on experimental characteristics for 525 K. It is shown that with growth of ambient temperature the selfheating mechanism contribution consistently decreases. By results of modeling it is established that self-heating contributions at supply voltages 5.5 V to decreases for ntransistor in 2.8 times, p-transistor in 2.2 times. The relative decline of current n-type transistor for reduced from 11.6% to 5.5% and for p-type with 15% to 9%. However, different dynamics of current recession for n-and p-transistors is significant for analog applications that need to be considered at high-temperature circuit design. The proposed methodology allows to critically assess the contribution of the self-heating mechanism on the I-V dates for a wide range of high temperatures and supply voltages. Underestimating this fact leads to unreasonable values for the maximum temperature and limit of thermal stability for the separate SOI CMOS transistor. In total this can be a prerequisite for a significant simplification of the design of not only the chip construction but also the whole electronic Board.


Polymers ◽  
2018 ◽  
Vol 11 (1) ◽  
pp. 19 ◽  
Author(s):  
Andrzej Katunin

The self-heating effect is a dangerous phenomenon that occurs in polymers and polymer matrix composites during their cyclic loading, and may significantly influence structural degradation and durability as a consequence. Therefore, an analysis of its criticality is highly demanding, due to the wide occurrence of this effect, both in laboratory fatigue tests, as well as in engineering practice. In order to overcome the problem of the accelerated degradation of polymer matrix structures, it is essential to evaluate the characteristic temperature values of self-heating, which are critical from the point of view of the fatigue life of these structures, i.e., the temperature at which damage initiates, and the safe temperature range in which these structures can be safely maintained. The experimental studies performed were focused on the determination of the critical self-heating temperature, using various approaches and measurement techniques. This paper present an overview of the research studies performed in the field of structural degradation, due to self-heating, and summarizes the studies performed on the evaluation of the criticality of the self-heating effect. Moreover, the non-destructive testing method, which uses the self-heating effect as a thermal excitation source, is discussed, and the non-destructivity of this method is confirmed by experimental results.


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