scholarly journals Изучение критического угла каналирования ионов активных металлов через тонкие пленки алюминия

2021 ◽  
Vol 47 (23) ◽  
pp. 12
Author(s):  
З.А. Исаханов ◽  
Б.Е. Умирзаков ◽  
С.С. Насриддинов ◽  
З.Э. Мухтаров ◽  
Р.М. Ёркулов
Keyword(s):  
Angular Distribution ◽  
Ion Beam ◽  
Spatial Distributions ◽  
Planar Channeling ◽  
Single Crystalline ◽  
Ion Energies ◽  
Axial Channeling ◽  
Thin Polycrystalline

The spatial distributions of ions (K+, Na+) passed through thin polycrystalline and single-crystalline Al films with the thickness from 180 to 600 Å and critical channeling angles have been studied. The ion energies have been varied within the range E0 = 10-30 keV. It has been shown that an increase in the energy of the primary ion beam leads to a decrease in the width of the maxima of the angular distribution, which is associated with a decrease in the critical channeling angle ψcr. It has been found that the value ψcr does not exceed 4-50 for axial channeling and 9-100 for planar channeling.

The angular distribution of scattered and sputtered 40-keV particles on polycrystalline targets

1968 ◽  
Vol 46 (6) ◽  
pp. 753-758 ◽  
Author(s):  
E. Formann ◽  
F. P. Viehböck ◽  
H. Wotke
Keyword(s):  
Angular Distribution ◽  
Activation Analysis ◽  
Hard Sphere ◽  
Ion Beam ◽  
Radioactive Tracer ◽  
Angular Distributions ◽  
Tracer Technique ◽  
Potential Approximation ◽  
Radioactive Tracer Technique ◽  
Graphite Rods

Based on the hard-sphere potential approximation, angular distributions of scattered particles at different mass ratios M1:M2 were calculated. The results were compared with experiments carried out with the following atoms:[Formula: see text]The sputtered particles from the target as well as from the incident-ion beam were collected on graphite rods and measured by either activation analysis or a radioactive tracer technique.

scholarly journals Призменный масс-спектрометр для изотопного анализа водородно-гелиевых смесей

2018 ◽  
Vol 44 (14) ◽  
pp. 94
Author(s):  
Л.Н. Галль ◽  
Е.М. Якушев ◽  
Л.М. Назаренко ◽  
А.С. Антонов ◽  
А.А. Семенов ◽  
...  
Keyword(s):  
Ion Beam ◽  
Mass Range ◽  
High Dispersion ◽  
High Brightness ◽  
Ion Trajectory ◽  
Ion Optics ◽  
Ion Energies ◽  
Trajectory Length ◽  
Original Scheme ◽  
Magnetic Mass

AbstractAn original scheme of a special magnetic mass-spectrometer for isotope measurements in a mass range of hydrogen–helium mixtures and their main impurities is proposed. The ion optics system contains a two-dimensional magnetic prism supplemented with two identical cylindrical electrostatic capacitors matched so that the system operates in the regime of complete triple focusing of the ion beam in two orthogonal directions and with respect to ion energies. The system ensures high dispersion and allows the mass resolution (no less than 3500) required for analysis at high brightness and a central ion trajectory length on the order of 1 m.

scholarly journals An Experiment-Based Profile Function for the Calculation of Damage Distribution in Bulk Silicon Induced by a Helium Focused Ion Beam Process

Sensors ◽  
2020 ◽  
Vol 20 (8) ◽  
pp. 2306 ◽  
Author(s):  
Qianhuang Chen ◽  
Tianyang Shao ◽  
Yan Xing
Keyword(s):  
Beam Energy ◽  
Focused Ion Beam ◽  
Crystalline Silicon ◽  
Ion Beam ◽  
Single Crystalline Silicon ◽  
Nanostructure Fabrication ◽  
Profile Function ◽  
Single Crystalline ◽  
Prediction Function ◽  
Wide Range

The helium focused ion beam (He-FIB) is widely used in the field of nanostructure fabrication due to its high resolution. Complicated forms of processing damage induced by He-FIB can be observed in substrates, and these damages have a severe impact on nanostructure processing. This study experimentally investigated the influence of the beam energy and ion dose of He-FIB on processing damage. Based on the experimental results, a prediction function for the amorphous damage profile of the single-crystalline silicon substrate caused by incident He-FIB was proposed, and a method for calculating the amorphous damage profile by inputting ion dose and beam energy was established. Based on one set of the amorphous damage profiles, the function coefficients were determined using a genetic algorithm. Experiments on single-crystalline silicon scanned by He-FIB under different process parameters were carried out to validate the model. The proposed experiment-based model can accurately predict the amorphous damage profile induced by He-FIB under a wide range of different ion doses and beam energies.

Aligned-Crystalline Si Films on Non-Single-Crystalline Substrates

2008 ◽  
Vol 1150 ◽  
Author(s):  
Alp Findikoglu ◽  
Terry G. Holesinger ◽  
Alyson Niemeyer ◽  
Vladimir Matias ◽  
Ozan Ugurlu
Keyword(s):  
Grain Boundaries ◽  
Doping Concentration ◽  
Ion Beam ◽  
Buffer Layers ◽  
Epitaxial Silicon ◽  
Single Crystalline ◽  
Out Of Plane ◽  
Flexible Metal ◽  
Si Films ◽  
Metal Tape

AbstractWe summarize recent progress in growth and characterization of aligned-crystalline silicon (ACSi) films on polycrystalline metal and amorphous glass substrates. The ACSi deposition process uses, as a key technique, ion-beam-assisted deposition (IBAD) texturing on a non-single-crystalline substrate to achieve a biaxially-oriented (i.e., with preferred out-of-plane and in-plane crystallographic orientations) IBAD seed layer, upon which homo- and hetero-epitaxial buffer layers and hetero-epitaxial silicon (i.e., ACSi) films with good electronic properties can be grown. We have demonstrated the versatility of our approach by preparing ACSi films on customized architectures, including fully insulating and transparent IBAD layer and buffer layers based on oxides on glass and flexible metal tape, and conducting and reflective IBAD layer and buffer layers based on nitrides on flexible metal tape. Optimized 0.4-μm-thick ACSi films demonstrate out-of-plane and in-plane mosaic spreads of 0.8° and 1.3°, respectively, and a room-temperature Hall mobility of ∼90 cm2/V.s (∼50% of what is achievable with epitaxial single-crystalline Si films, and ∼1000 times that of amorphous Si films) for a p-type doping concentration of ∼4×1016 cm−3. By using various experimental techniques, we have confirmed the underlying crystalline order and the superior electrical characteristics of low-angle (<5°) grain boundaries in ACSi films. Forming gas anneal experiments indicate that Si films with low-angle grain boundaries do not need to be passivated to demonstrate improved majority carrier transport properties. Measurements on metal-insulator-semiconductor structures using ACSi films yield near-electronic-grade surface properties and low surface defect densities in the ACSi films. A prototype n+/p/p+–type diode fabricated using a 4.2-μm-thick ACSi film shows minority carrier lifetime of ∼3 μs, an estimated diffusion length of ∼30 μm in the p-Si layer with a doping concentration of 5×1016 cm−3, and external quantum efficiency of ∼80% at 450 nm with the addition of an MgO film anti-reflector.

One-two step transfer observed in 16O+11B nuclear system

2015 ◽  
Vol 24 (06) ◽  
pp. 1550047 ◽  
Author(s):  
Sh. Hamada ◽  
N. Burtebayev
Keyword(s):  
Angular Distribution ◽  
Cross Section ◽  
Born Approximation ◽  
Optical Model ◽  
Ion Beam ◽  
Nuclear System ◽  
Distorted Wave ◽  
Distorted Wave Born Approximation ◽  
Cluster Transfer ◽  
Spectroscopic Amplitude

The angular distribution measurements for 16O ion beam elastically scattered from 11 B target of thickness 32.9μg/cm2 at energy 22.4 MeV had been performed in the cyclotron DC-60 INP NNC RK. The previous measurements for 16 O +11 B nuclear system at energies 27, 30, 32.5 and 35 MeV showed an increase in the differential cross-section at backward angles due to the contribution of cluster transfer. Such transfer process could not be described in terms of optical model (OM); it could be described within the framework of distorted wave Born approximation method implemented in FRESCO code. Both one (5 Li ) and two-step transfer (proton transfer followed by Alpha transfer) were taken into considerations. We have extracted the spectroscopic amplitude (SA) for the configuration 16 O →11 B +5 Li .

Importance of Internal Ion Beam Parameters on the Self-organized Pattern Formation with Low-energy Broad Beam Ion Sources

2009 ◽  
Vol 1181 ◽  
Author(s):  
Marina I Cornejo ◽  
Bashkim Ziberi ◽  
Michael Tartz ◽  
Horst Neumann ◽  
Frank Frost ◽  
...  
Keyword(s):  
Angular Distribution ◽  
Surface Topography ◽  
Incidence Angle ◽  
Ion Beam ◽  
Plasma Sheath ◽  
Low Energy ◽  
Optical Parameters ◽  
Broad Beam ◽  
Beam Parameters ◽  
Total Voltage

AbstractThe low energy ion beam erosion of solid surfaces is a simple bottom-up approach for the generation of nanostructures. For certain sputtering conditions caused by self-organization processes well ordered nanostructures on the surface like one-dimensional ripples or regular arrays of dots can be formed [1]. Using broad beam sources, the low energy ion beam erosion can be a cost-efficient method to produce large-area nanostructured surfaces in a one-step process.The processes involved have been studied in the last decades and the pattern formation is attributed to the competition of curvature dependant sputtering and various relaxation mechanisms. It is also well known that the ion beam incidence angle (the angle between the sample surface normal and the axis of the beam source) is one critical parameter that determines the surface topography. However, inherent to all broad beam sources, the ion beam exhibits a certain divergence, i.e. the ion trajectories are not parallel to each other. This generates a spread of the local incidence angle with respect to the geometrically defined beam incidence angle.Recent studies showed that the divergence angle and angular distribution of the ions, here called internal beam parameters, also affect the surface topography [2].The angular distribution can be controlled by the total voltage applied on the geometrical defined ion optical system of the broad beam ion source. For the given multi-aperture two-grid ion optical system the total voltage is the sum of the voltages applied to the first (screen) and second (accelerator) grid. This total voltage, together with the geometrical characteristics of the used grid systems, including the shape of the plasma sheath boundary at the screen grid, define the overall ion-optical parameters of the source, i. e. the divergence angle and angular distribution of the ions within the beam.In this contribution a first approach of the effect of the internal beam parameters on the surface topography is presented. It was analyzed the effect on the topography on Si surfaces of some experimental parameters that affect the internal beam parameters by changing the ion-optical parameters and the shape of the plasma sheath boundary. Explicitly, the influence of the discharge voltage, the operation time and the distance between the screen and accelerator grid is shown.[1] B. Ziberi, M. Cornejo, F. Frost, B. Rauschenbach, J. Phys.: Condens. Matter (submitted).[2] B. Ziberi, F. Frost, M. Tartz, H. Neumann, B. Rauschenbach, Appl. Phys. Lett. 92, 063102 (2008)

Ion Sources for Ion Beam Assisted Thin Film Deposmon

1995 ◽  
Vol 396 ◽  
Author(s):  
Igor V. Svadkovsk ◽  
Anatoly P. Dostanko
Keyword(s):  
Ion Beam ◽  
Ion Source ◽  
Ion Sources ◽  
Inert Gases ◽  
Anode Layer ◽  
High Current ◽  
Ion Beam Assisted Deposition ◽  
Ion Energies ◽  
Extended Range ◽  
Basic Distinction

AbstractTwo types of the ion sources for ion beam assisted deposition using inert gases, oxygen or nitrogen are reported. Their design and operational features are presented. Each of them has the properties of two existing main types of the gridless Hall sources: an end-Hall source and the anode-layer version a closed-drift ion source. Basic distinction of the developed sources is the extended range of ion energies in high-current beam for optimization of deposition, cleaning and etching processes.

scholarly journals Ion Synthesis: Si-Ge Quantum Dots

2018 ◽  
Vol 52 (5) ◽  
pp. 516
Author(s):  
N.N. Gerasimenko ◽  
N.S. Balakleyskiy ◽  
A.D. Volokhovskiy ◽  
D.I. Smirnov ◽  
O.A. Zaporozhan
Keyword(s):  
Quantum Dots ◽  
High Temperature ◽  
Temperature Region ◽  
Ion Beam ◽  
Self Organization ◽  
High Temperature Annealing ◽  
Ion Energies ◽  
Ion Beam Implantation ◽  
Ge Quantum Dots

AbstractWe present a method of Si–Ge QDs formation by ion beam implantation (IBI) technique and high temperature annealing for self-organization. Implantation doses varied from 10^14 to 10^17 cm^–2, ion energies ranged from 50 to 150 keV, annealing proceeded at temperature of 950 to 1050°C in argon environment. Formed QDs show strong infrared (IR) photoluminescence (PL) in the temperature region 15–250 K.

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