Ion Sources for Ion Beam Assisted Thin Film Deposmon

1995 ◽  
Vol 396 ◽  
Author(s):  
Igor V. Svadkovsk ◽  
Anatoly P. Dostanko
Keyword(s):  
Ion Beam ◽  
Ion Source ◽  
Ion Sources ◽  
Inert Gases ◽  
Anode Layer ◽  
High Current ◽  
Ion Beam Assisted Deposition ◽  
Ion Energies ◽  
Extended Range ◽  
Basic Distinction

AbstractTwo types of the ion sources for ion beam assisted deposition using inert gases, oxygen or nitrogen are reported. Their design and operational features are presented. Each of them has the properties of two existing main types of the gridless Hall sources: an end-Hall source and the anode-layer version a closed-drift ion source. Basic distinction of the developed sources is the extended range of ion energies in high-current beam for optimization of deposition, cleaning and etching processes.

Development of high-current ionic liquid ion source toward surface modification

2013 ◽  
Vol 1575 ◽  
Author(s):  
Mitsuaki Takeuchi ◽  
Takuya Hamaguchi ◽  
Hiromichi Ryuto ◽  
Gikan H Takaoka
Keyword(s):  
Ionic Liquid ◽  
Surface Modification ◽  
Flow Rate ◽  
Ion Beam ◽  
Beam Current ◽  
Ion Source ◽  
Ion Sources ◽  
Ion Current ◽  
High Current ◽  
Beam Characteristics

ABSTRACTIonic liquid (IL) ion sources with different emitter tip materials and tip numbers were developed and examined on ion beam characteristics with respect to its ILs wettability. As a result of ion current measurements, the most stable emission current was obtained for the graphite emitter tip and the ion current increased with increase of the tip number. The results indicate that the emitter wettability corresponding to the supplying flow rate and the number of emission site play an important role to stabilize and increase the beam current.

High-current negative-ion beam acceleration with a large negative-ion source for large helical device-neutral beam injection system

1998 ◽  
Vol 69 (2) ◽  
pp. 977-979 ◽  
Author(s):  
Y. Takeiri ◽  
M. Osakabe ◽  
K. Tsumori ◽  
Y. Oka ◽  
O. Kaneko ◽  
...  
Keyword(s):  
Ion Beam ◽  
Ion Source ◽  
Neutral Beam Injection ◽  
Negative Ion ◽  
Neutral Beam ◽  
Injection System ◽  
High Current ◽  
Beam Injection

Effects of electrode geometry on the ion beam extraction of closed drift type anode layer linear ion source

2012 ◽  
Vol 83 (2) ◽  
pp. 02B703 ◽  
Author(s):  
Seunghun Lee ◽  
Jong-Kuk Kim ◽  
Do-Geun Kim
Keyword(s):  
Ion Beam ◽  
Ion Source ◽  
Beam Extraction ◽  
Electrode Geometry ◽  
Anode Layer

Characterization of plasma ion source utilizing anode spot with positively biased electrode for stable and high-current ion beam extraction

2011 ◽  
Vol 82 (12) ◽  
pp. 123303 ◽  
Author(s):  
Yeong-Shin Park ◽  
Yuna Lee ◽  
Kyoung-Jae Chung ◽  
Y. S. Hwang
Keyword(s):  
Ion Beam ◽  
Ion Source ◽  
Beam Extraction ◽  
High Current ◽  
Anode Spot ◽  
Plasma Ion Source

Some properties of amorphous hydrogenated silicon nitride prepared by ion-beam-assisted deposition

1991 ◽  
Vol 69 (5) ◽  
pp. 553-557 ◽  
Author(s):  
P. Wilson ◽  
D. C. Craigen ◽  
D. E. Brodie
Keyword(s):  
Uv Light ◽  
Ion Beam ◽  
Wide Band ◽  
Ion Source ◽  
Wide Band Gap ◽  
Hydrogenated Silicon ◽  
Hydrogen Mixture ◽  
Ion Beam Assisted Deposition ◽  
Amorphous Hydrogenated Silicon ◽  
Low Energy Ions

Thin films of a-SiNx:H were deposited using the ion-beam-assisted deposition technique. Silicon was evaporated from a resistively heated carbon crucible while the substrate was bombarded with low-energy ions (100 eV). The feed gas used for the ion source was primarily ammonia (NH3), but a 90% nitrogen, 10% hydrogen mixture was also tried. The nitrogen–hydrogen mixture resulted in nonhydrogenated films. Both the absence of absorption in the IR spectrum owing to oxygen, and the increase in slope of the Tauc plots are evidence of an improvement in film morphology owing to the ion bombardment. The wide band-gap films photoconduct when exposed to UV light. The photoconducting property is lost when the films are exposed to air, and is restored when the samples are thermally annealed in a vacuum.

Pattern Evolution of NiSi2 on Si Surface upon High Current Pulsed Ni Ion Implantation

2000 ◽  
Vol 648 ◽  
Author(s):  
X.Q. Cheng ◽  
H.N. Zhu ◽  
B.X. Liu
Keyword(s):  
Ion Implantation ◽  
Ion Beam ◽  
Fractal Dimensions ◽  
Metal Vapor ◽  
Ion Source ◽  
Vacuum Arc ◽  
High Current ◽  
Si Substrate ◽  
Kinetics Of ◽  
Si Wafer

AbstractFractal pattern evolution of NiSi2 grains on a Si surface was induced by high current pulsed Ni ion implantation into Si wafer using metal vapor vacuum arc ion source. The fractal dimension of the patterns was found to correlate with the temperature rise of the Si substrate caused by the implanting Ni ion beam. With increasing of the substrate temperature, the fractal dimensions were determined to increase from less than 1.64, to beyond the percolation threshold of 1.88, and eventually up to 2.0, corresponding to a uniform layer with fine NiSi2 grains. The growth kinetics of the observed surface fractals was also discussed in terms of a special launching mechanism of the pulsed Ni ion beam into the Si substrate.

Extraction of high current Cr ion beam from a multicusp metal ion source

1994 ◽  
Vol 65 (4) ◽  
pp. 1269-1271
Author(s):  
Takatoshi Yamashita ◽  
Yutaka Inouchi ◽  
Shuichi Fujiwara ◽  
Yasuhiro Matsuda ◽  
Hiroshi Inami ◽  
...  
Keyword(s):  
Metal Ion ◽  
Ion Beam ◽  
Ion Source ◽  
High Current

Gas-discharge ion sources for electromagnetic mass separation on a heavy-ion beam II. operating speed of ion source

1976 ◽  
Vol 41 (5) ◽  
pp. 999-1000
Author(s):  
A. P. Kabachenko ◽  
I. V. Kuznetsov ◽  
Li Hen Su ◽  
N. I. Tarantin
Keyword(s):  
Ion Beam ◽  
Heavy Ion ◽  
Gas Discharge ◽  
Ion Source ◽  
Ion Sources ◽  
Mass Separation ◽  
Operating Speed ◽  
Electromagnetic Mass ◽  
Heavy Ion Beam

scholarly journals Development of a new high-current triode extraction system for helicon ion source: design and simulation

2018 ◽  
Vol 36 (4) ◽  
pp. 477-486 ◽  
Author(s):  
M. Khoshhal ◽  
M. Habibi ◽  
Rod W. Boswell
Keyword(s):  
Ion Implantation ◽  
Ion Beam ◽  
Ion Source ◽  
High Current ◽  
Ion Temperature ◽  
Beam Emittance ◽  
Extraction Voltage ◽  
Parabolic Geometry ◽  
First Time ◽  
Plasma Electrode

AbstractThree triode extraction systems are simulated by IBSimu ion optical code for Amirkabir Helicon Ion Source (AHIS). The optimized pierce and suggested parabolic electrodes are introduced for the first time in this paper. The obtained N+ beam for parabolic geometry designed for ion implantation has 66 keV energy, and 10.4 mA current. Ion beam emittance and Twiss parameters of the emittance ellipse as the function of x term index are calculated for parabolic electrode equation. The simulated triode extraction systems have been evaluated by using of optimized parameters such as the extraction voltage, gap distance, plasma electrode (PE) aperture, and ion temperature. The extraction voltage, gap distance, PE aperture, and ion temperature have been changed in the range of 58–70 kV, 35–39 mm, 4–6 mm, and 0.5–4.4 eV in the simulations, respectively.

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