Radio-frequency performance of a sub-100 nm metal-oxide field-effect transistor with high-k gate dielectric

Semiconductor Science and Technology ◽

10.1088/0268-1242/25/4/045029 ◽

2010 ◽

Vol 25 (4) ◽

pp. 045029 ◽

Author(s):

K Kakushima ◽

M Nakagawa ◽

P Ahmet ◽

K Tsutsui ◽

N Sugii ◽

...

Keyword(s):

Metal Oxide ◽

Radio Frequency ◽

Field Effect ◽

Field Effect Transistor ◽

Gate Dielectric ◽

High K ◽

Effect Transistor ◽

High K Gate Dielectric

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Impact of high-k gate dielectric with different angles of coverage on the electrical characteristics of gate-all-around field effect transistor: A simulation study

Results in Physics ◽

10.1016/j.rinp.2019.102823 ◽

2020 ◽

Vol 16 ◽

pp. 102823 ◽

Author(s):

Mohammad Karbalaei ◽

Daryoosh Dideban ◽

Hadi Heidari

Keyword(s):

Simulation Study ◽

Field Effect ◽

Field Effect Transistor ◽

Gate Dielectric ◽

Electrical Characteristics ◽

High K ◽

Effect Transistor ◽

High K Gate Dielectric

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Modeling on drain current of high-k gate dielectric fully-depleted nanoscale germanium-on-insulator p-channel metal-oxide-semiconductor field-effect transistor

Acta Physica Sinica ◽

10.7498/aps.63.237304 ◽

2014 ◽

Vol 63 (23) ◽

pp. 237304

Author(s):

Bai Yu-Rong ◽

Xu Jing-Ping ◽

Liu Lu ◽

Fan Min-Min ◽

Huang Yong ◽

...

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Field Effect Transistor ◽

Gate Dielectric ◽

Drain Current ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Fully Depleted ◽

High K ◽

Effect Transistor

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Correlations between structural and electrical properties of nitrided SiOx thin films used as power metal oxide semiconductor field effect transistor gate dielectric

Applied Physics Letters ◽

10.1063/1.3021404 ◽

2008 ◽

Vol 93 (18) ◽

pp. 182109

Author(s):

E. Fazio ◽

F. Neri ◽

G. Curró M. Camalleri ◽

D. Calí

Keyword(s):

Electrical Properties ◽

Metal Oxide ◽

Field Effect ◽

Field Effect Transistor ◽

Gate Dielectric ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Structural And Electrical Properties ◽

Effect Transistor

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Analysis of the effect of germanium preamorphization on interface defects and leakage current for high-k metal-oxide-semiconductor field-effect transistor

Journal of Vacuum Science & Technology B Nanotechnology and Microelectronics Materials Processing Measurement and Phenomena ◽

10.1116/1.3521479 ◽

2011 ◽

Vol 29 (1) ◽

pp. 01AA05 ◽

Author(s):

G. Roll ◽

S. Jakschik ◽

M. Goldbach ◽

A. Wachowiak ◽

T. Mikolajick ◽

...

Keyword(s):

Metal Oxide ◽

Leakage Current ◽

Field Effect ◽

Field Effect Transistor ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Interface Defects ◽

High K ◽

Effect Transistor

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Analytical modeling of a split-gate dielectric modulated metal-oxide-semiconductor field-effect transistor for application as a biosensor

2014 2nd International Conference on Devices, Circuits and Systems (ICDCS) ◽

10.1109/icdcsyst.2014.6926183 ◽

2014 ◽

Author(s):

Ajay ◽

Rakhi Narang ◽

Manoj Saxena ◽

Mridula Gupta

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Analytical Modeling ◽

Field Effect Transistor ◽

Gate Dielectric ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Effect Transistor

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Device Performance Analysis of Graphene Nanoribbon Field-Effect Transistor with Rare-Earth Oxide (La2O3) Based High-k Gate Dielectric

International Journal for Research in Applied Science and Engineering Technology ◽

10.22214/ijraset.2018.1257 ◽

2018 ◽

Vol 6 (1) ◽

pp. 1650-1690

Author(s):

M. K. Bera

Keyword(s):

Performance Analysis ◽

Field Effect ◽

Field Effect Transistor ◽

Gate Dielectric ◽

Rare Earth Oxide ◽

Graphene Nanoribbon ◽

Device Performance ◽

High K ◽

Effect Transistor

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Electrostatic and radio frequency performance investigation of δ-doped In0.53Ga0.47As/InP stepped poly gate metal oxide semiconductor field effect transistor

Journal of Micromechanics and Microengineering ◽

10.1088/1361-6439/ab2170 ◽

2019 ◽

Vol 29 (8) ◽

pp. 084001 ◽

Author(s):

Soumya S Mohanty ◽

Urmila Bhanja ◽

G P Mishra

Keyword(s):

Metal Oxide ◽

Radio Frequency ◽

Field Effect ◽

Field Effect Transistor ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Effect Transistor

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Effects of varying interfacial oxide and high-k layer thicknesses for HfO2 metal–oxide–semiconductor field effect transistor

Applied Physics Letters ◽

10.1063/1.1773370 ◽

2004 ◽

Vol 85 (7) ◽

pp. 1286-1288 ◽

Author(s):

Se Jong Rhee ◽

Chang Yong Kang ◽

Chang Seok Kang ◽

Rino Choi ◽

Chang Hwan Choi ◽

...

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Field Effect Transistor ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

High K ◽

Effect Transistor

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Trap evaluations of metal/oxide/silicon field-effect transistors with high-k gate dielectric using charge pumping method

Applied Physics Letters ◽

10.1063/1.1506776 ◽

2002 ◽

Vol 81 (11) ◽

pp. 2050-2052 ◽

Author(s):

Ga-Won Lee ◽

Jae-Hee Lee ◽

Hae-Wang Lee ◽

Myoung-Kyu Park ◽

Dae-Gwan Kang ◽

...

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Gate Dielectric ◽

Field Effect Transistors ◽

Charge Pumping ◽

High K ◽

Metal Oxide Silicon ◽

High K Gate Dielectric

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Inversion-Mode Self-Aligned $\hbox{In}_{0.53}\hbox{Ga}_{0.47}\hbox{As}$ N-Channel Metal-Oxide-Semiconductor Field-Effect Transistor With HfAlO Gate Dielectric and TaN Metal Gate

IEEE Electron Device Letters ◽

10.1109/led.2008.2001766 ◽

2008 ◽

Vol 29 (9) ◽

pp. 977-980 ◽

Author(s):

J. Q. Lin ◽

S. J. Lee ◽

H. J. Oh ◽

G. Q. Lo ◽

D. L. Kwong ◽

...

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Field Effect Transistor ◽

Gate Dielectric ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Inversion Mode ◽

Effect Transistor

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