In this report, we demonstrated a reliable switching effect of carbon nanotube (CNT) field-effect transistor (FET) devices integrated with 99% semiconducting CNT as a channel and high-k oxide as the dielectric. CNT FET devices with high-k oxides of Al-ZrHfO2 and Al2O3 were electrically characterized and compared. There was no considerable hysteresis in the Al2O3-based CNT FET device. The Al-ZrHfO2 with a tetragonal phase-based high dielectric constant (~47), designed by an atomic layer deposition process, showed a reliable switching effect as well as low operation voltage (<±3 V). Charge trapping/detrapping process via oxygen vacancy-related defects of Al-ZrHfO2 was proposed as a primary mechanism to explain a current change of a counterclockwise direction and threshold voltage (Vth) shift for transfer properties. The suggested charge trapping model within bulk oxide was experimentally proven since the hysteresis from the adsorption/desorption of gas molecules to CNT surface was negligible. Endurance characteristics of the CNT switching devices remained stable without any serious current fluctuation during a repetitive cycling test. The memory device with reliable switching properties as well as low operation power would pave a road toward next-generation memory components of portable electronic gadgets.
Impact of high-k gate dielectric with different angles of coverage on the electrical characteristics of gate-all-around field effect transistor: A simulation study