scholarly journals Switching overvoltages protection of power electronics converters with gate turn-off thyristors

2021 ◽  
Vol 7 (2) ◽  
pp. 103-110
Author(s):  
Yevhen Fediv ◽  
◽  
Olha Sivakova ◽  
Vladyslav Lysiak ◽  
Mykhailo Korchak
Keyword(s):  
Power Supply ◽  
Power Converters ◽  
Visual Programming ◽  
Avalanche Breakdown ◽  
Programming Environment ◽  
Effective Protection ◽  
Power Electronics Converters ◽  
Current Voltage ◽  
Methods And Techniques ◽  
Current Voltage Characteristics

Using the developed models in the “Simulink” visual programming environment of the “Matlab” application package using the “SimPowerSystem” and “Simscape Electrical” libraries, a comparative analysis of methods and techniques for limiting switching overvoltages in power converters, which are controlled by unlocking two-operation thyristors, was performed. The choice of a specific means of limitation is individual for each converter and depends on many factors - the power of the converter, the current-voltage characteristics of thyristors, the parameters of the power supply, and so on. Studies have shown that the most effective protection against voltage pulses with short duration and significant amplitude is the use of “Transient Voltage Suppressors” limiting diodes, the action of which is based on the use of avalanche breakdown during the time of thyristor unlocking.

scholarly journals FRACTAL PROPERTIES OF MICROPLASMA BREAKDOWN AND STRUCTURAL HETEROGENEITY OF SEMICONDUCTOR MATERIALS

2019 ◽  
Vol 3 ◽  
pp. 105
Author(s):  
Samuil Khanin ◽  
Antonina Shashkina
Keyword(s):  
Fractal Dimension ◽  
Structural Heterogeneity ◽  
Semiconductor Materials ◽  
Avalanche Breakdown ◽  
Semiconductor Structures ◽  
Fractal Properties ◽  
Current Voltage ◽  
Structural Inhomogeneities ◽  
Current Voltage Characteristics ◽  
Microplasma Breakdown

This work presents experimental results on the study of current-voltage characteristics and oscillograms of microplasma pulses of the p-n-junction avalanche breakdown. Based on the latter, the pulse duration distributions are determined. As a result, it is shown that microplasma noise has fractal properties. The latter form the basis of avalanche breakdown types developed classification. The correlation between the fractal dimension of microplasma noise and structural inhomogeneities of functional semiconductor structures is revealed.

Current-voltage characteristics of carbon nanostructured field emitters in different power supply modes

2017 ◽  
Vol 424 ◽  
pp. 239-244 ◽  
Author(s):  
E.O. Popov ◽  
A.G. Kolosko ◽  
S.V. Filippov ◽  
P.A. Romanov ◽  
E.I. Terukov ◽  
...  
Keyword(s):  
Power Supply ◽  
Field Emitters ◽  
Current Voltage ◽  
Current Voltage Characteristics

scholarly journals Instabilities of electrical properties of He-induced W “fuzz” within the pre-breakdown and breakdown regimes

2021 ◽  
Vol 2064 (1) ◽  
pp. 012004
Author(s):  
Yu A Zemskov ◽  
Yu I Mamontov ◽  
I V Uimanov ◽  
N M Zubarev ◽  
A V Kaziev ◽  
...  
Keyword(s):  
Electrical Properties ◽  
Power Supply ◽  
Large Scale ◽  
Vacuum Chamber ◽  
High Vacuum ◽  
Specific Area ◽  
Copper Anode ◽  
Current Voltage ◽  
Current Voltage Characteristics ◽  
Permanent Increase

Abstract The investigation of the He-induced W “fuzz” electrical properties was carried out. For the research, an automated experimental setup was designed. The setup was based on a vacuum chamber operated under high vacuum conditions (~ 10−7 Pa). The vacuum diode under investigation comprised of a flat W “fuzz” cathode with an area of about 1 cm2 and a 2 mm radius cylindrical copper anode with a hemisphere tip. The cathode-anode distance was about 100 μm. The voltage applied was up to 10 kV. A DAC/ADC module controlled an HV power supply and automatically registered currents and voltages in the circuit. The effect of a spontaneous change in the emissive ability of the investigated surface area was observed. These changes can vary significantly in magnitude. Large-scale changes can lead to a permanent increase in the emissive ability of a specific area or to a breakdown of the gap. Small changes, as a rule, are reversible, have a stepped nature, and make it difficult to record and interpret the current-voltage characteristics of the field emitter.

Current–voltage characteristics of high-voltage 4H-SiC p +–n 0–n + diodes in the avalanche breakdown mode

2017 ◽  
Vol 51 (3) ◽  
pp. 374-378 ◽  
Author(s):  
P. A. Ivanov ◽  
A. S. Potapov ◽  
T. P. Samsonova ◽  
I. V. Grekhov
Keyword(s):  
High Voltage ◽  
Avalanche Breakdown ◽  
Current Voltage ◽  
Current Voltage Characteristics
Sign in / Sign up

Export Citation Format

Share Document