scholarly journals High Growth Rate Synthesis of High Quality Diamond Film by Arc Discharge Plasma Jet CVD.

2001 ◽  
Vol 67 (12) ◽  
pp. 2032-2036
Author(s):  
Atsushi HIRATA ◽  
Atsushi YOSHIDA
Keyword(s):  
Growth Rate ◽  
Diamond Film ◽  
Discharge Plasma ◽  
Arc Discharge ◽  
High Growth ◽  
Plasma Jet ◽  
High Growth Rate ◽  
High Quality

Deposition of large area high quality diamond wafers with high growth rate by DC arc plasma jet

2000 ◽  
Vol 9 (9-10) ◽  
pp. 1673-1677 ◽  
Author(s):  
H. Guo ◽  
Z.L. Sun ◽  
Q.Y. He ◽  
S.M. Du ◽  
X.B. Wu ◽  
...  
Keyword(s):  
Growth Rate ◽  
High Growth ◽  
Plasma Jet ◽  
High Growth Rate ◽  
Arc Plasma ◽  
Large Area ◽  
High Quality ◽  
Dc Arc

Nitrogen and Bias Effect on Homoepitaxial Diamond Growth by Hot-Filament Chemical Vapor Deposition

2010 ◽  
Vol 443 ◽  
pp. 510-515 ◽  
Author(s):  
Hung Yin Tsai ◽  
Chih Cheng Chang ◽  
Chih Wei Wu
Keyword(s):  
Growth Rate ◽  
Chemical Vapor Deposition ◽  
Diamond Film ◽  
Vapor Deposition ◽  
Diamond Films ◽  
Chemical Vapor ◽  
High Growth ◽  
High Growth Rate ◽  
High Quality ◽  
Hot Filament

The development of homoepitaxial films for advanced device applications has been studied, but high growth rate and diamond film quality have not yet been explored. In the current study, high quality homoepitaxial diamond films were grown on type Ib (100) HPHT synthetic diamond substrate by hot-filament chemical vapor deposition. The reactant gases were mixed by CH4 and H2 with small amounts of N2 (500 to 3000 ppm). Besides, a bias system was used to assist diamond film deposition. The pyramidal crystals on diamond surface can be suppressed and high quality diamond film of FWHM (Full Width at Half Maximum) = 10.76 cm-1 with high growth rate of 8.78 ± 0.2 μm/ hr was obtained at the condition of adding 1000 ppm nitrogen. At the bias voltage of -150 V, the pyramidal crystals can also be suppressed and high quality diamond film of FWHM = 10.19 cm-1 was obtained. With nitrogen addition above 2000 ppm, diamond film was partly doped and some sp2 structures appeared. These homoepitaxial diamond films were characterized by optical microscopy and micro-Raman spectroscopy.

Investigation of homoepitaxial growth by microwave plasma CVD providing high growth rate and high quality of diamond simultaneously

2020 ◽  
Vol 22 ◽  
pp. 100816 ◽  
Author(s):  
A.L. Vikharev ◽  
M.A. Lobaev ◽  
A.M. Gorbachev ◽  
D.B. Radishev ◽  
V.A. Isaev ◽  
...  
Keyword(s):  
Growth Rate ◽  
Microwave Plasma ◽  
High Growth ◽  
High Growth Rate ◽  
Plasma Cvd ◽  
High Quality ◽  
Homoepitaxial Growth ◽  
Microwave Plasma Cvd

Morphology of Diamond Films Grown by DC Plasma Jet CVD

1989 ◽  
Vol 162 ◽  
Author(s):  
Kazuaki Kurihara ◽  
Ken-Ichi Sasaki ◽  
Motonobu Kawarada ◽  
Nagaaki Koshino
Keyword(s):  
Growth Rate ◽  
Microwave Plasma ◽  
Diamond Films ◽  
High Growth ◽  
Plasma Jet ◽  
High Growth Rate ◽  
Plasma Cvd ◽  
Dc Plasma ◽  
Synthesis Conditions ◽  
Microwave Plasma Cvd

ABSTRACTIt is well known that diamond films synthesized from the gas phase have well defined crystal habits which are affected strongly by synthesis conditions. Though there have been many studies of the morphologies of diamond films synthesized by microwave plasma CVD [1,2,3], there have been relatively few reports on the morphologies of these films grown using new high growth rate techniques such as DC plasma jet CVD [4]. Morphology control is very important to keep flat surface, when producing thick diamond films by high growth rate techniques. In this paper we report our investigation of the morphology and growth of diamond films synthesized by DC plasma jet CVD.

Growth of high quality AlN/sapphire templates with high growth rate using a medium-temperature layer

2019 ◽  
Vol 125 ◽  
pp. 343-347 ◽  
Author(s):  
Hualong Wu ◽  
Wei Zhao ◽  
Chenguang He ◽  
Kang Zhang ◽  
Longfei He ◽  
...  
Keyword(s):  
Growth Rate ◽  
High Growth ◽  
High Growth Rate ◽  
High Quality ◽  
Medium Temperature

scholarly journals Single Crystal Diamond Deposited by Dual Radio-Frequency Plasma Jet CVD with High Growth Rate

Crystals ◽  
2019 ◽  
Vol 9 (1) ◽  
pp. 32 ◽  
Author(s):  
Hao Liu ◽  
Jia-jun Li ◽  
Zhen-rui Li ◽  
Kai Xu ◽  
Zheng-jia Chen ◽  
...  
Keyword(s):  
Growth Rate ◽  
Radio Frequency ◽  
Single Crystal ◽  
Emission Spectra ◽  
High Growth ◽  
Optical Emission ◽  
Plasma Jet ◽  
Methane Flux ◽  
High Growth Rate ◽  
Single Crystal Diamond

Single crystal diamonds were deposited on high pressure high temperature (HPHT) substrate with high growth rate, up to 18.5 μm/h, by using dual radio-frequency inductive coupled plasma jet. The methane flux was found to influence the growth rate of single crystal diamond. The reason for this might be ascribed to the electron temperature increase, raising the flux of methane, based on the plasma diagnosis results by optical emission spectra (OES). The results of Raman spectroscopy and the X-ray rocking-curve indicated that as-deposited diamonds are of good quality.

scholarly journals High quality large-area graphene synthesis with high growth rate using plasma-enhanced CVD

Synthesiology ◽  
2016 ◽  
Vol 9 (3) ◽  
pp. 124-138 ◽  
Author(s):  
Masataka HASEGAWA ◽  
Kazuo TSUGAWA ◽  
Ryuichi KATO ◽  
Yoshinori KOGA ◽  
Masatou ISHIHARA ◽  
...  
Keyword(s):  
Growth Rate ◽  
High Growth ◽  
High Growth Rate ◽  
Large Area ◽  
High Quality ◽  
Plasma Enhanced Cvd ◽  
Graphene Synthesis
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