scholarly journals Study Study on photoluminescence properties of porous GaP material

2018 ◽  
Vol 34 (1) ◽  
Author(s):  
Pham Thi Thuy ◽  
Bui Xuan Vuong
Keyword(s):  
Solid State ◽  
Electrochemical Etching ◽  
Green Emission ◽  
Functional Materials ◽  
Bulk Sample ◽  
Electrochemical Anodization ◽  
Photoluminescence Intensity ◽  
Temperature Dependent ◽  
Time Resolved ◽  
Time Resolved Photoluminescence

This paper reports on the photoluminescence of porous GaPprepared by electrochemical anodization of (111)-oriented bulk material.Porous and bulk GaP exhibits green and red photoluminescence, respectively when excited by the 355-nm laser. The photoluminescence intensity of porous GaP is much stronger than that of the bulk sample. Temperature-dependent time-resolved photoluminescence shows that the green emission gradually decreases when the temperature increases and the photoluminescence full width at haft maximum (FWHM) slightly narrow with decreasing temperature. These results assigned to the contribution of lattice vibrations. Raman scattering measurement is carried out to confirm the size decreasing of the porous GaP material. Keywords PorousGaP, photoluminescence, time-resolved photoluminescence, electrochemical etching References 1. L. T. Canham, Appl. Phys.Lett. 57, 1046 (1990).2. K. Grigoras, Jpn. J. Appl. Phys. 39, 378 (2000)3. H. Koyama, J. Appl. Electrochem. 36, 999 (2006)4. H. A. Hadi, International Letters of Chemistry, Physics and Astronomy, 17(2), 142-152 (2014).5. S. Setzu, P. Ferrand, and R. Romestain, Mater.Sci. Eng, 34, 69-70 (2000).6. S. E. Letant and M. J. Sailor, Adv. Mater, 355, 12 (2000).7. M. T. Kelly, J. K. M. Chun, and A. B. Bocarsly, Nature, 382, 214 (1996).8. G. Di Francia, V. La Ferrara, L. Quercia, and G. Faglia, J. Porous Mater, 7, 287 (2000).9. J. Drott, K. Lindstrom, L. Rosengren, and T. Laurell, J. Micromech. Microeng, 7, 14 (1997).10. B. P. Azeredo, Y. W. Lin, A. Avagyan, M. Sivaguru, K. Hsu, P. Ferreira, Advanced Functional Materials, 26, 2929-2939 (2016).11. A. Anedda, A. Serpi, V. A. Karavanskii, I. M. Tiginyanu, and V. M. Ichizli, Appl. Phys.Lett, 67, 3316 (1995).12. A. I. Belogorokhov, V. A. Karavanskii, A. N. Obraztsov and V. Yu. Timoshenko, JETP Lett. 60, 274 (1994).13. K. Tomioka, S. Adachi, J. App. Phys, 98, 073511 (2005).14. M. A. Stevens-Kalceff, I. M. Tiginyanu, S. Langa, H. Foll and H. L. Hartnagel, J. App. Phys, 89,2560 (2001).15. A. V. Zoteev, P. K. Kashkarov, A. N. Obraztsov and V. Y. Timoshenko, Semiconductors, 30, 775 (1996).16. A. A. Lebedev, V. Y. Rud and Y. V. Rud, Tech. Phys. Lett, 22, 754 (1996).17. H. Richter, Z. P. Wang, and L. Ley, Solid State Commum, 39, 625 (1981).18. L. H. Campbell and P. M.Fauchet, Solid State Commum, 58, 739 (1986).19. V. V. Ursaki, N. N. Syrbu, S. Albu, V. V. Zalamai, I. M. Tiginyanu, and R. W. Boyd, Semicond. Sci. Technl, 20, 745- 748 (2005)20. R. W. Tjerkstra, Electrochemical and Solid-State Letters,9 (5), C81-C84 (2006)

Instrumentation for Reliably Determining Porous Silicon Photoluminescence Responses to Gaseous Analyte Vapors

2016 ◽  
Vol 70 (12) ◽  
pp. 1974-1980 ◽  
Author(s):  
Justin M. Reynard ◽  
Nathan S. Van Gorder ◽  
Caley A. Richardson ◽  
Richie D. Eriacho ◽  
Frank V. Bright
Keyword(s):  
Porous Silicon ◽  
Vapor Concentration ◽  
Photoluminescence Intensity ◽  
Spectral Measurements ◽  
Temperature Dependent ◽  
Time Resolved ◽  
Hyper Spectral ◽  
New Instrumentation ◽  
Time Resolved Photoluminescence ◽  
New System

We report new instrumentation for rapidly and reliably measuring the temperature-dependent photoluminescence response from porous silicon as a function of analyte vapor concentration. The new system maintains the porous silicon under inert conditions and it allows on-the-fly steady-state and time-resolved photoluminescence intensity and hyper-spectral measurements between 293 K and 450 K. The new system yields reliable data at least 100-fold faster in comparison to previous instrument platforms.

scholarly journals The thermal stability of FAPbBr3 nanocrystals from temperature-dependent photoluminescence and first-principles calculations

RSC Advances ◽  
2020 ◽  
Vol 10 (72) ◽  
pp. 44373-44381
Author(s):  
Xiaozhe Wang ◽  
Qi Wang ◽  
Zhijun Chai ◽  
Wenzhi Wu
Keyword(s):  
First Principles ◽  
First Principle ◽  
First Principles Calculations ◽  
Temperature Dependent ◽  
Time Resolved ◽  
First Principle Calculations ◽  
Steady State Time ◽  
Time Resolved Photoluminescence ◽  
Thermal Stability Of ◽  
Temperature Dependent Photoluminescence

The thermal properties of FAPbBr3 perovskite nanocrystals (PNCs) is investigated by use of temperature-dependent steady-state/time-resolved photoluminescence and first-principle calculations.

Time-resolved photoluminescence of solid state fullerenes

1993 ◽  
Vol 204 (5-6) ◽  
pp. 461-466 ◽  
Author(s):  
H.J. Byrne ◽  
W. Maser ◽  
W.W. Rühle ◽  
A. Mittelbach ◽  
W. Hönle ◽  
...  
Keyword(s):  
Solid State ◽  
Time Resolved ◽  
Time Resolved Photoluminescence

scholarly journals Time Resolved Optical Studies of InGaN Layers Grown on LGO

2002 ◽  
Vol 743 ◽  
Author(s):  
Maurice Cheung ◽  
Gon Namkoong ◽  
Madalina Furis ◽  
Fei Chen ◽  
Alexander. N. Cartwright ◽  
...  
Keyword(s):  
Structural Quality ◽  
Photoluminescence Intensity ◽  
X Ray Diffraction ◽  
Optical Studies ◽  
Time Resolved ◽  
Lattice Match ◽  
Spatially Resolved ◽  
Recombination Processes ◽  
Time Resolved Photoluminescence ◽  
Intensity Decay

ABSTRACTRadiative recombination processes in bulk InGaN grown by molecular beam epitaxy (MBE) on lithium gallate (LGO or LiGaO2) substrates were investigated using microscopic PL and time-resolved photoluminescence (TRPL). The improved structural quality resulting from a better lattice match of the LGO substrate to III-V nitride materials simplifies these investigations because well-defined composition phases can be analyzed for both homogeneous and phased separated InGaN samples. Epilayers of InGaN intentionally grown with and without indium segregation were studied. X-ray diffraction measurements showed that the homogeneous epilayer was high quality In0.208Ga0.702N and the segregated epilayer exhibited peaks corresponding to both In0.289Ga0.711N and In0.443Ga0.557N indicating the presence of higher In concentration regions in this sample. Spatially resolved photoluminescence spectra confirm the existence of these regions. The photoluminescence intensity decay is non-exponential for both samples and a stretched exponential fit to the decay data confirms the existence of local potential fluctuations in which carriers are localized before recombination.

scholarly journals Investigation on photoluminescence quenching of CdSe/ZnS quantum dots by organic charge transporting materials

2015 ◽  
Vol 33 (4) ◽  
pp. 709-713 ◽  
Author(s):  
Qu Yuqiu ◽  
Zhang Liuyang ◽  
An Limin ◽  
Wei Hong
Keyword(s):  
Quantum Dots ◽  
Oxidation Potential ◽  
Core Shell ◽  
Photoluminescence Intensity ◽  
Dynamic Quenching ◽  
Photoluminescence Quenching ◽  
Time Resolved ◽  
Quenching Efficiency ◽  
Hole Transporting ◽  
Time Resolved Photoluminescence

AbstractThe effect of different organic charge transporting materials on the photoluminescence of CdSe/ZnS core/shell quantum dots has been studied by means of steady-state and time-resolved photoluminescence spectroscopy. With an increase in concentration of the organic charge transporting material in the quantum dots solutions, the photoluminescence intensity of CdSe/ZnS quantum dots was quenched greatly and the fluorescence lifetime was shortened gradually. The quenching efficiency of CdSe/ZnS core/shell quantum dots decreased with increasing the oxidation potential of organic charge transporting materials. Based on the analysis, two pathways in the photoluminescence quenching process have been defined: static quenching and dynamic quenching. The dynamic quenching is correlated with hole transporting from quantum dots to the charge transporting materials.

scholarly journals Direct observation of intersystem crossing in a thermally activated delayed fluorescence copper complex in the solid state

2016 ◽  
Vol 2 (1) ◽  
pp. e1500889 ◽  
Author(s):  
Larissa Bergmann ◽  
Gordon J. Hedley ◽  
Thomas Baumann ◽  
Stefan Bräse ◽  
Ifor D. W. Samuel
Keyword(s):  
Solid State ◽  
Delayed Fluorescence ◽  
Average Lifetime ◽  
Intersystem Crossing ◽  
Time Resolved ◽  
Thermally Activated Delayed Fluorescence ◽  
Light Emitting ◽  
Thermally Activated ◽  
Singlet States ◽  
Time Resolved Photoluminescence

Intersystem crossing in thermally activated delayed fluorescence (TADF) materials is an important process that controls the rate at which singlet states convert to triplets; however, measuring this directly in TADF materials is difficult. TADF is a significant emerging technology that enables the harvesting of triplets as well as singlet excited states for emission in organic light emitting diodes. We have observed the picosecond time-resolved photoluminescence of a highly luminescent, neutral copper(I) complex in the solid state that shows TADF. The time constant of intersystem crossing is measured to be 27 picoseconds. Subsequent overall reverse intersystem crossing is slow, leading to population equilibration and TADF with an average lifetime of 11.5 microseconds. These first measurements of intersystem crossing in the solid state in this class of mononuclear copper(I) complexes give a better understanding of the excited-state processes and mechanisms that ensure efficient TADF.

scholarly journals Ultrafast Carrier Dynamics and Recombination in Green Emitting InGaN MQW LED

2006 ◽  
Vol 916 ◽  
Author(s):  
Alexander N. Cartwright ◽  
M. C-K. Cheung ◽  
F. Shahedipour-Sandvik ◽  
J. R. Grandusky ◽  
M. Jamil ◽  
...  
Keyword(s):  
Defect Density ◽  
Optical Transition ◽  
Effective Means ◽  
Green Emission ◽  
Layer Growth ◽  
Layer By Layer ◽  
Green Luminescence ◽  
Time Resolved ◽  
Photoluminescence Decay ◽  
Time Resolved Photoluminescence

AbstractTime-resolved photoluminescence studies can provide useful information for the development of InGaN/GaN heterostructures for long wavelength visible emitters. In this paper, we present results of time-resolved photoluminescence from samples grown using two different approaches to achieve green emission from InGaN/GaN MQWs. In one approach, samples, with high indium incorporation, were grown on a high quality AlN substrate to achieve green emission. The resulting photoluminescence decay of the green luminescence is long-lived and non-exponential. Quantitative analysis showed that the decay has a stretched-exponential characteristic, typical of InGaN/GaN MQW with potential fluctuation along the growth plane. This carrier localization, in a structure with low defect density, proves to be an effective means to achieve green emission. In another approach, a piezoelectric Stark-like ladder effect is used. In this case, a methodical layer-by-layer growth homogeneity optimization process was adopted to achieve an optical transition below the electron to heavy-hole (e1hh1) transition when the quantum well is subjected to the strong piezoelectric polarization dipole. This approach has proven to be successful in achieving green luminescence on conventional sapphire substrates. The resulting photoluminescence decay at 14 K, of a sample grown by this approach, is single exponential and shorter in duration than the decay observed in the first approach. This exponential decay is consistent with previous AFM studies that revealed a homogeneous active region.

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