scholarly journals Study the Effect of heat treatment on AgInTe2 the optical properties thin films

2019 ◽  
Vol 24 (3) ◽  
pp. 95
Author(s):  
Marwan R. Abass ◽  
Iman H. Khudayer

AgInTe2 (AIT) thin films had been prepared by the used technique of vacuum thermal evaporation, with thickness  300 nm, the deposition rate  1.7 ±0.1 nm/sec on a glass substrate at room temperature and pressure (10-5) mbar Heat treatment was performed in the range (473-673) K for samples. The AIT thin films optical properties (absorption coefficient, index of refractive, extinction coefficient, real and imaginary dielectric constant) were studied by determination using measurement absorption and transmission spectra. The results showed they are wide applications such as photovoltaic electronic applications and photovoltaic applications.   http://dx.doi.org/10.25130/tjps.24.2019.053   

2018 ◽  
Vol 26 (10) ◽  
pp. 249-256
Author(s):  
Waleed Khalid Kadhim

In this paper I present the preparation of (Sb2o3) thin films using thermal evaporation in vacuum, procedure with different thickness  (100 ,150 ,200 ,and 250) nm, by using ( hot plate) from Molybdenum matter at temperature in ( 9000c) and the period of time (15mint) ,the prepared in a manner thermal evaporation in a vacuum and precipitated on glass bases, pure Antimony Trioxide (sb2o3 ) thin films with various condition have been successfully deposited by (T.E.V) on glass slide substrates. The substrates temperature of about 100oC and the vacuum of about 10-6 torr, to investigated oxidation of evaporated, measure spectra for prepared films in arrange of wavelength (250 – 1100 nm). The following optical properties have been calculated: the absorption coefficient, the forbidden (Eg) for direct and indirect transitions "absorbance, refractive index,  extinction coefficient, real and imaginary parts" of the dielectric constant.


2012 ◽  
Vol 26 (31) ◽  
pp. 1250137 ◽  
Author(s):  
M. AMIRHOSEINY ◽  
Z. HASSAN ◽  
S. S. NG ◽  
L. S. CHUAH ◽  
M. A. AHMAD ◽  
...  

We have fabricated photoconductors of indium nitride (InN) grown by radio frequency (RF) sputtering. The InN thin films were deposited on Si (100), Si (110) and Si (111) substrates at room temperature. The Ag/Al contact has been deposited by thermal evaporation in vacuum (10-5 Torr ) and then annealed under the flowing of the nitrogen gas environment in order to relieve stress and also induce any favorable reactions between metals and the semiconductor. Current–voltage (I–V) measurements after heat treatment at 400°C were carried out for samples in dark and illumination conditions. It was found that Ag/Al formed a good ohmic contact on top of InN . In addition, the characteristics of the contacts were significantly affected by the orientation of substrates.


RSC Advances ◽  
2020 ◽  
Vol 10 (70) ◽  
pp. 42744-42753
Author(s):  
P. Knotek ◽  
P. Kutálek ◽  
E. Černošková ◽  
M. Vlček ◽  
L. Tichý

Amorphous As2S3, As2Se3 and As1Se99 bulk glasses and thin films were prepared on different substrates by melt quenching technique and vacuum thermal evaporation. The resulting properties were compared.


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