InN PHOTOCONDUCTORS ON DIFFERENT ORIENTATIONS OF Si SUBSTRATES

2012 ◽  
Vol 26 (31) ◽  
pp. 1250137 ◽  
Author(s):  
M. AMIRHOSEINY ◽  
Z. HASSAN ◽  
S. S. NG ◽  
L. S. CHUAH ◽  
M. A. AHMAD ◽  
...  
Keyword(s):  
Thin Films ◽  
Heat Treatment ◽  
Ohmic Contact ◽  
Room Temperature ◽  
Thermal Evaporation ◽  
Indium Nitride ◽  
Rf Sputtering ◽  
Nitrogen Gas ◽  
Si Substrates ◽  
Current Voltage

We have fabricated photoconductors of indium nitride (InN) grown by radio frequency (RF) sputtering. The InN thin films were deposited on Si (100), Si (110) and Si (111) substrates at room temperature. The Ag/Al contact has been deposited by thermal evaporation in vacuum (10-5 Torr ) and then annealed under the flowing of the nitrogen gas environment in order to relieve stress and also induce any favorable reactions between metals and the semiconductor. Current–voltage (I–V) measurements after heat treatment at 400°C were carried out for samples in dark and illumination conditions. It was found that Ag/Al formed a good ohmic contact on top of InN . In addition, the characteristics of the contacts were significantly affected by the orientation of substrates.

scholarly journals Annealing Effect on the Thermoelectric Properties of Bi2Te3Thin Films Prepared by Thermal Evaporation Method

2013 ◽  
Vol 2013 ◽  
pp. 1-6 ◽  
Author(s):  
Jyun-Min Lin ◽  
Ying-Chung Chen ◽  
Chi-Pi Lin
Keyword(s):  
Thin Films ◽  
Seebeck Coefficient ◽  
Thermoelectric Properties ◽  
Power Factor ◽  
Room Temperature ◽  
Annealing Temperature ◽  
Thermal Evaporation ◽  
Thermal Evaporation Method ◽  
Si Substrates ◽  
Seebeck Coefficients

Bismuth telluride-based compounds are known to be the best thermoelectric materials within room temperature region, which exhibit potential applications in cooler or power generation. In this paper, thermal evaporation processes were adopted to fabricate the n-type Bi2Te3thin films on SiO2/Si substrates. The influence of thermal annealing on the microstructures and thermoelectric properties of Bi2Te3thin films was investigated in temperature range 100–250°C. The crystalline structures and morphologies were characterized by X-ray diffraction and field emission scanning electron microscope analyses. The Seebeck coefficients, electrical conductivity, and power factor were measured at room temperature. The experimental results showed that both the Seebeck coefficient and power factor were enhanced as the annealing temperature increased. When the annealing temperature increased to 250°C for 30 min, the Seebeck coefficient and power factor of n-type Bi2Te3-based thin films were found to be about −132.02 μV/K and 6.05 μW/cm·K2, respectively.

Reactive Sputtering Growth and Characterizations of InN Thin Films on Si Substrates

2012 ◽  
Vol 545 ◽  
pp. 290-293
Author(s):  
Maryam Amirhoseiny ◽  
Hassan Zainuriah ◽  
Ng Shashiong ◽  
Mohd Anas Ahmad
Keyword(s):  
Thin Films ◽  
Room Temperature ◽  
Rf Magnetron Sputtering ◽  
Rf Power ◽  
X Ray Diffraction ◽  
Nitrogen Gas ◽  
X Ray ◽  
Force Microscopy ◽  
Si Substrates ◽  
Atomic Force

We have studied the effects of deposition conditions on the crystal structure of InN films deposited on Si substrate. InN thin films have been deposited on Si(100) substrates by reactive radio frequency (RF) magnetron sputtering method with pure In target at room temperature. The nitrogen gas pressure, applied RF power and the distance between target and substrate were 2×10-2 Torr, 60 W and 8 cm, respectively. The effects of the Ar–N2 sputtering gas mixture on the structural properties of the films were investigated by using scanning electron microscope, energy-dispersive X-ray spectroscopy, atomic force microscopy and X-ray diffraction techniques.

scholarly journals Influence of Deposition Rate on the Thermoelectric Properties of Sb2Te3Thin Films by Thermal Evaporation Method

2015 ◽  
Vol 2015 ◽  
pp. 1-5 ◽  
Author(s):  
Jyun-Min Lin ◽  
Ying-Chung Chen ◽  
Wei Chen
Keyword(s):  
Thin Films ◽  
Seebeck Coefficient ◽  
Figure Of Merit ◽  
Room Temperature ◽  
Thermal Evaporation ◽  
X Ray Diffraction ◽  
Thermal Evaporation Method ◽  
X Ray ◽  
Si Substrates ◽  
Cooling Devices

Thermoelectric (TE) materials are crucial because they can be used in power generation and cooling devices. Sb2Te3-based compounds are the most favorable TE materials because of their excellent figure of merit at room temperature. In this study, Sb2Te3thin films were prepared on SiO2/Si substrates through thermal evaporation. The influence of the evaporation current on the microstructures and TE properties of Sb2Te3thin films were investigated. The crystalline structures and morphologies of the thin films were analyzed using X-ray diffraction and field emission scanning electron microscopy. The Seebeck coefficient, electrical conductivity, and power factor (PF) were measured at room temperature. The experimental results showed that the Seebeck coefficient increased and conductivity decreased with increasing evaporation current. The Seebeck coefficient reached a maximum of 387.58 μV/K at an evaporation current of 80 A. Conversely, a PF of 3.57 µW/cmK2was obtained at room temperature with evaporation current of 60 A.

scholarly journals Effect of Substrate Temperature on the Thermoelectric Properties of the Sb2Te3Thin Films Deposition by Using Thermal Evaporation Method

2015 ◽  
Vol 2015 ◽  
pp. 1-6
Author(s):  
Jyun-Min Lin ◽  
Ying-Chung Chen ◽  
Cheng-Fu Yang ◽  
Wei Chen
Keyword(s):  
Thin Films ◽  
Substrate Temperature ◽  
Thermoelectric Properties ◽  
Room Temperature ◽  
Thermal Evaporation ◽  
Thermal Evaporation Method ◽  
Evaporation Method ◽  
Si Substrates ◽  
Seebeck Coefficients ◽  
Thermoelectric Thin Films

The antimony-telluride (Sb2Te3) thermoelectric thin films were prepared on SiO2/Si substrates by thermal evaporation method. The substrate temperature that ranged from room temperature to 150°C was adopted to deposit the Sb2Te3thin films. The effects of substrate temperature on the microstructures and thermoelectric properties of the Sb2Te3thin films were investigated. The crystal structure and surface morphology of the Sb2Te3thin films were characterized by X-ray diffraction analyses and field emission scanning electron microscope observation. The RT-deposited Sb2Te3thin films showed the amorphous phase. Te and Sb2Te3phases were coexisted in the Sb2Te3-based thin films as the substrate temperature was higher than room temperature. The average grain sizes of the Sb2Te3-based thin films were 39 nm, 45 nm, 62 nm, 84 nm, and 108 nm, as the substrate temperatures were 50°C, 75°C, 100°C, 125°C, and 150°C, respectively. The Seebeck coefficients, electrical conductivity, and power factor were measured at room temperature; we had found that they were critically dependent on the substrate temperature.

scholarly journals Study the Effect of heat treatment on AgInTe2 the optical properties thin films

2019 ◽  
Vol 24 (3) ◽  
pp. 95
Author(s):  
Marwan R. Abass ◽  
Iman H. Khudayer
Keyword(s):  
Thin Films ◽  
Heat Treatment ◽  
Dielectric Constant ◽  
Optical Properties ◽  
Room Temperature ◽  
Thermal Evaporation ◽  
Transmission Spectra ◽  
Vacuum Thermal Evaporation ◽  
Photovoltaic Applications ◽  
Temperature And Pressure

AgInTe2 (AIT) thin films had been prepared by the used technique of vacuum thermal evaporation, with thickness  300 nm, the deposition rate  1.7 ±0.1 nm/sec on a glass substrate at room temperature and pressure (10-5) mbar Heat treatment was performed in the range (473-673) K for samples. The AIT thin films optical properties (absorption coefficient, index of refractive, extinction coefficient, real and imaginary dielectric constant) were studied by determination using measurement absorption and transmission spectra. The results showed they are wide applications such as photovoltaic electronic applications and photovoltaic applications.   http://dx.doi.org/10.25130/tjps.24.2019.053   

Interactions Between Al and Cr Thin Films

1976 ◽  
Vol 34 ◽  
pp. 638-639
Author(s):  
R. M. Anderson ◽  
T. M. Reith ◽  
M. J. Sullivan ◽  
E. K. Brandis
Keyword(s):  
Thin Films ◽  
Room Temperature ◽  
Vacuum System ◽  
Processing Temperature ◽  
Diffusion Couples ◽  
Electronic Circuits ◽  
Intermetallic Formation ◽  
Si Substrates ◽  
Aluminum Silicon

Thin films of aluminum or aluminum-silicon can be used in conjunction with thin films of chromium in integrated electronic circuits. For some applications, these films exhibit undesirable reactions; in particular, intermetallic formation below 500 C must be inhibited or prevented. The Al films, being the principal current carriers in interconnective metal applications, are usually much thicker than the Cr; so one might expect Al-rich intermetallics to form when the processing temperature goes out of control. Unfortunately, the JCPDS and the literature do not contain enough data on the Al-rich phases CrAl7 and Cr2Al11, and the determination of these data was a secondary aim of this work.To define a matrix of Cr-Al diffusion couples, Cr-Al films were deposited with two sets of variables: Al or Al-Si, and broken vacuum or single pumpdown. All films were deposited on 2-1/4-inch thermally oxidized Si substrates. A 500-Å layer of Cr was deposited at 120 Å/min on substrates at room temperature, in a vacuum system that had been pumped to 2 x 10-6 Torr. Then, with or without vacuum break, a 1000-Å layer of Al or Al-Si was deposited at 35 Å/s, with the substrates still at room temperature.

Interface motion during recrystallization of amorphous NiSi2

1990 ◽  
Vol 48 (4) ◽  
pp. 524-525
Author(s):  
J. L. Batstone ◽  
D.A. Smith
Keyword(s):  
Thin Films ◽  
Room Temperature ◽  
Amorphous Film ◽  
Nucleation And Growth ◽  
Recrystallization Process ◽  
Amorphous Films ◽  
Interface Motion ◽  
Si Substrates ◽  
Spherical Caps ◽  
Crystal Interfaces

Recrystallization of amorphous NiSi2 involves nucleation and growth processes which can be studied dynamically in the electron microscope. Previous studies have shown thatCoSi2 recrystallises by nucleating spherical caps which then grow with a constant radial velocity. Coalescence results in the formation of hyperbolic grain boundaries. Nucleation of the isostructural NiSi2 results in small, approximately round grains with very rough amorphous/crystal interfaces. In this paper we show that the morphology of the rccrystallizcd film is dramatically affected by variations in the stoichiometry of the amorphous film.Thin films of NiSi2 were prepared by c-bcam deposition of Ni and Si onto Si3N4, windows supported by Si substrates at room temperature. The base pressure prior to deposition was 6 × 107 torr. In order to investigate the effect of stoichiomctry on the recrystallization process, the Ni/Si ratio was varied in the range NiSi1.8-2.4. The composition of the amorphous films was determined by Rutherford Backscattering.

Ferroelectric Property and Microstructures of La-Doped Bi4Ti3O12 Thin Films

2013 ◽  
Vol 537 ◽  
pp. 114-117
Author(s):  
X.A. Mei ◽  
Rui Fang Liu ◽  
C.Q. Huang ◽  
J. Liu
Keyword(s):  
Thin Films ◽  
Hysteresis Loops ◽  
Differential Resistance ◽  
Rf Magnetron Sputtering ◽  
Layered Perovskite ◽  
Random Orientation ◽  
Si Substrates ◽  
Current Voltage ◽  
Current Voltage Characteristics ◽  
La Doped

La-doped bismuth titanate (Bi4-xLaxTi3O12: BLT) and pure Bi4Ti3O12 (BIT) thin films with random orientation were fabricated on Pt/Ti/SiO2/Si substrates by rf magnetron sputtering technique. These samples had polycrystalline Bi-layered perovskite structure without preferred orientation, and consisted of well developed rod-like grains with random orientation. For the samples with x=0.25 and 1.0 the current-voltage characteristics exhibited negative differential resistance behaviors and their P-V hysteresis loops were characterized by large leakage current, whereas for the samples with x=0.5 and 0.75 the current-voltage characteristics showed simple ohmic behaviors and their P-V hysteresis loops were the saturated and undistorted hysteresis loops. The remanent polarization ( Pr ) and coercive field (Ec) of the BLT ceramic with x=0.75 were above 20μC/cm2 and 85KV/cm , respectively.

The Heat Treatment Characteristics of Hydroxyapatite Thin Films Deposited by RF Sputtering

2007 ◽  
pp. 1433-1436
Author(s):  
Chan Hoi Jung ◽  
Soon Kook Kim ◽  
Chang Woo Jang ◽  
Jun Hee Lee ◽  
Su Ho Lee ◽  
...  
Keyword(s):  
Thin Films ◽  
Heat Treatment ◽  
Rf Sputtering ◽  
Treatment Characteristics

Effect of Hydrogen Treatment on Room -Temperature Electric-Field Induced Properties in Narrow-Gap ZnCdHgTe Thin Films

2004 ◽  
Vol 813 ◽  
Author(s):  
Galina M. Khlyap ◽  
Petro G. Sydorchuk ◽  
Jacek Polit
Keyword(s):  
Thin Films ◽  
Room Temperature ◽  
Hydrogen Treatment ◽  
Narrow Gap ◽  
Glass Substrates ◽  
Semiconductor Thin Films ◽  
Visible Wavelength Range ◽  
Current Voltage ◽  
Before And After ◽  
First Time

ABSTRACTThe effect of hydrogen treatment on room temperature electric properties of narrow-gap semiconductor thin films ZnxCdyHg1−z−yTe (0 < x < 0.50, 0.20 < y < 0.40) is investigated for the first time. ZnCdHgTe films of 2 – 5 [.proportional]m thickness were grown on glass substrates by pulsed laser deposition technique. As-grown films were thermally treated in the flow of molecular H2 at 200°C during 24 hours. Comparison between electric characteristics measured before and after hydrogenation showed sufficient changes of the film resistance and appearance of photosensitivity in the visible wavelength range. Study of current-voltage characteristics of the films revealed appearance and significant change of diode-like properties.

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