Single Crystal Silicon as a Macro-World Structural Material: Design of Compact, Lightweight High Pressure Vessels

2008 ◽  
Author(s):  
Tanya Garza ◽  
Alan Epstein
Keyword(s):  
High Pressure ◽  
Structural Material ◽  
Single Crystal ◽  
Single Crystal Silicon ◽  
Material Design ◽  
Pressure Vessels ◽  
Crystal Silicon

Basic Characteristics of a Simultaneous Double-Side CMP Machine, Housed in a Sealed, Pressure-Resistant Container

2010 ◽  
Vol 447-448 ◽  
pp. 61-65 ◽  
Author(s):  
Kei Kitamura ◽  
Toshiro K. Doi ◽  
Syuhei Kurokawa ◽  
Yoji Umezaki ◽  
Yoji Matsukawa ◽  
...  
Keyword(s):  
High Pressure ◽  
Single Crystal ◽  
Effective Action ◽  
Single Crystal Silicon ◽  
Crystal Silicon ◽  
Pressure Oxygen ◽  
Gas Atmosphere ◽  
High Pressure Oxygen ◽  
Oxygen Gas ◽  
Basic Characteristics

We designed and manufactured a prototype of a unique CMP machine, which can perform double-side CMP simultaneously in a sealed and pressure container as regarding effective action of the processing atmosphere around workpieces as important. Polishing experiments with single crystal silicon (Si) wafers (100) are performed by charging the container with various gases. As a result, the removal rates increased by up to 25% under high pressure oxygen gas atmosphere.

Ductile Regime Nanomachining of Single-Crystal Silicon Carbide

2004 ◽  
Vol 127 (3) ◽  
pp. 522-532 ◽  
Author(s):  
John Patten ◽  
Wei Gao ◽  
Kudo Yasuto
Keyword(s):  
Silicon Carbide ◽  
High Pressure ◽  
Single Crystal ◽  
Single Point ◽  
Single Crystal Silicon ◽  
Diamond Turning ◽  
High Pressure Phase ◽  
Ductile Material ◽  
Crystal Silicon ◽  
Pressure Phase

We have demonstrated the ability to perform a ductile material removal operation, via single-point diamond turning, on single-crystal silicon carbide (6H). To our knowledge, this is the first reported work on the ductile machining of single-crystal silicon carbide (SiC). SiC experiences a ductile-to-brittle transition similar to other nominally brittle materials such as silicon, germanium, and silicon nitride. It is believed that the ductility of SiC during machining is due to the formation of a high-pressure phase at the cutting edge, which encompasses the chip formation zone and its associated material volume. This high-pressure phase transformation mechanism is similar to that found with other semiconductors and ceramics, leading to a plastic response rather than brittle fracture at small size scales.

Analysis of Silicon-On-Insulator Structures Formed By Oxygen Ion Implantation

1985 ◽  
Vol 43 ◽  
pp. 300-301
Author(s):  
N. Lewis ◽  
E. L. Hall ◽  
A. Mogro-Campero ◽  
R. P. Love
Keyword(s):  
Ion Implantation ◽  
Single Crystal ◽  
Single Crystal Silicon ◽  
Silicon Layer ◽  
Device Fabrication ◽  
Silicon On Insulator ◽  
High Dose ◽  
Crystal Silicon ◽  
Oxygen Ion ◽  
Oxygen Ion Implantation

The formation of buried oxide structures in single crystal silicon by high-dose oxygen ion implantation has received considerable attention recently for applications in advanced electronic device fabrication. This process is performed in a vacuum, and under the proper implantation conditions results in a silicon-on-insulator (SOI) structure with a top single crystal silicon layer on an amorphous silicon dioxide layer. The top Si layer has the same orientation as the silicon substrate. The quality of the outermost portion of the Si top layer is important in device fabrication since it either can be used directly to build devices, or epitaxial Si may be grown on this layer. Therefore, careful characterization of the results of the ion implantation process is essential.

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