scholarly journals LIGHT ABSORBER WITH AN ULTRA-BROAD FLAT BAND BASED ON MULTI-SIZED SLOW-WAVE HYPERBOLIC METAMATERIAL THIN-FILMS (Invited Paper)

2014 ◽  
Vol 147 ◽  
pp. 69-79 ◽  
Author(s):  
Sailing He ◽  
Fei Ding ◽  
Lei Mo ◽  
Fanglin Bao
Keyword(s):  
Thin Films ◽  
Slow Wave ◽  
Flat Band ◽  
Hyperbolic Metamaterial ◽  
Light Absorber

Identification of marcasite in pyrite FeS2 thin films and the films' carrier transport characteristics

RSC Advances ◽  
2016 ◽  
Vol 6 (84) ◽  
pp. 81394-81399 ◽  
Author(s):  
Juran Kim ◽  
Gee Yeong Kim ◽  
Hankyoul Moon ◽  
Seokhyun Yoon ◽  
Il Wan Seo ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Carrier Transport ◽  
Sulfurization Temperature ◽  
Light Absorber

400 °C is optimal sulfurization temperature for pure pyrite FeS2 thin film, expecting better performance as light-absorber.

A solution-processed ternary copper halide thin films for air-stable and deep-ultraviolet-sensitive photodetector

Nanoscale ◽  
2020 ◽  
Vol 12 (33) ◽  
pp. 17213-17221 ◽  
Author(s):  
Wen-Qing Liang ◽  
Ying Li ◽  
Jing-Li Ma ◽  
Yue Wang ◽  
Jing-Jing Yan ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Copper Halide ◽  
Solution Processed ◽  
Light Absorber ◽  
Deep Ultraviolet

An air-stable and deep-ultraviolet-sensitive photodetector was fabricated using a solution-processed ternary copper halide Cs3Cu2I5 thin film as the light absorber.

scholarly journals Highly Efficient Broadband Light Absorber Based on Nonuniform Hyperbolic Metamaterial Film

2018 ◽  
Vol 2018 ◽  
pp. 1-7 ◽  
Author(s):  
Nina A. Zharova ◽  
Alexander A. Zharov ◽  
Alexander A. Zharov
Keyword(s):  
Incidence Angle ◽  
Resonant Absorption ◽  
Refraction Index ◽  
Wide Frequency Range ◽  
Anisotropy Axis ◽  
Hyperbolic Metamaterial ◽  
Highly Efficient ◽  
Spatial Shift ◽  
Light Absorber ◽  
Resonant Region

We develop a concept of highly efficient broadband light absorber based on nonuniform hyperbolic metamaterial. We suggest a gradual bending of the anisotropy axis inside the metamaterial that results in spatial shift of the area of resonant absorption depending on the incidence angle. In this resonant region the wavevector of light is parallel to the generatrix of resonant cone and the radiation losses are maximal because of extremely high value of refraction index. Changing the radiation frequency also shifts the spatial position of the resonant region so that high level of absorption may be achieved in wide frequency range. Using the model of nanowire medium (silver wires in silica host) we predict that 200 nm film of this hyperbolic metamaterial allows reaching almost total absorption of radiation throughout the visible band.

(Invited) Dielectric Properties and Flat-Band Voltages of Doped- HfO2 Thin Films

2019 ◽  
Vol 28 (2) ◽  
pp. 191-202 ◽  
Author(s):  
Frederique Ducroquet ◽  
Erwan Rauwel ◽  
Virginie Brizé ◽  
Catherine Dubourdieu
Keyword(s):  
Thin Films ◽  
Dielectric Properties ◽  
Flat Band

FT-IR, Sims and Electrical Characterization of Si3N4 Thin Films Obtained from C.V.D. Assisted by In-Situ Electrical Discharge

1992 ◽  
Vol 284 ◽  
Author(s):  
B. Balland ◽  
J. C. Bureau ◽  
C. Plossu ◽  
R. Botton
Keyword(s):  
Thin Films ◽  
Electrical Discharge ◽  
Low Frequency ◽  
Electrical Characterization ◽  
Interface State ◽  
State Density ◽  
Flat Band ◽  
Band Shift ◽  
Ft Ir

ABSTRACTAn original process has been developed enabling the fabrication of CVD insulating (Si3N4) thin films, by means of an in-situ activation of the reactions at T < 400°C and under P=1 to 2 torr. Mono-Si substrates were nitrided using a mixture of argon containing SiH4 and NH3·O2 has also been added to the reaction gases. The activation was performed by a DC electrical discharge. The substrate was not used as an electrode and was placed parallel to the discharge current. This configuration minimized the contamination of the films during their formation. The obtained layers have been analyzed using FT-IR and SIMS.M.I.S. structures have been realized, and the flat-band shift ΔVFB and the interface state density Nit have been extracted from the high and low frequency C-V characteristics. The values of the flat-band shift depend on the discharge domain and decrease with temperature. Good electrical characteristics are obtained for thin films formed at low temperature.

Study of metal gate work function modulation using plasma and SiH4 treated TiN thin films

2003 ◽  
Vol 786 ◽  
Author(s):  
F. Fillot ◽  
S. Maîtrejean ◽  
T. Farjot ◽  
B. Guillaumot ◽  
B. Chenevier ◽  
...  
Keyword(s):  
Thin Films ◽  
Work Function ◽  
Film Growth ◽  
Gate Oxide ◽  
Oxide Thickness ◽  
Flat Band ◽  
Metal Gate ◽  
Polysilicon Gate ◽  
Tin Thin Films ◽  
Tin Metal

ABSTRACTAs gate oxide thickness decreases, the capacitance associated with the depleted layer in polysilicon gate becomes significant, making it necessary to consider alternative gate electrodes. Titanium nitride (TiN) films elaborated with TiCl4 precursor is widely studied as metal gate in semi-conductor technology. In this work, a study of TiN metal gate deposited by MOCVD using TDMAT (Tetrakisdimethylamino titanium) precursor is proposed. N2, H2 plasma application and SiH4 treatment after TiN thin film growth modify composition and microstructure. Consequently, they alter the physical properties of films. Such treatments may be a way to modulate work function and thus to control threshold voltage.Metallic layers were deposited in a chamber using a commercial 8 inch wafer deposition tool. In this study, structural and compositional properties of TiN were correlated with work function measurements. Firstly, the composition evolution (carbon content) was studied by AES and SIMS as a function of plasma and SiH4 treatments; XRD gave details on the microstructure. Secondly, MOS structures were processed on uniformly p-type doped wafers. C-V curves of capacitors were used to estimate the flat band voltage (VFB) and gave access to the work function, the effect of oxide fixed charges and the density of interface states. It is shown that as-deposited amorphous films exhibit a work function of 4.4 eV. Exposure to SiH4 is shown to increase this work function of about 150 meV. Thin films properties are not impacted by anneal treatments. Work function stability was tested at 425 °C, 900 °C and 1050 °C. Thermodynamic compatibility with gate oxide was verified thanks to experimental results and calculations.

Preparation and Characterization of N-CdS Thin Films and its Schottky Barrier

2013 ◽  
Vol 665 ◽  
pp. 307-310
Author(s):  
K.D. Patel ◽  
Keyur S. Hingarajiya ◽  
Mayur M. Patel ◽  
V.M. Pathak ◽  
R. Srivastava
Keyword(s):  
Thin Films ◽  
Barrier Height ◽  
Thermionic Emission ◽  
Cadmium Sulphide ◽  
Optical Characterization ◽  
Point Of View ◽  
Flat Band ◽  
Zero Bias ◽  
Cds Thin Films

Cadmium sulphide (CdS), a member of group II-VI semiconductors is one of the promising materials from its applications point of view. The present investigations are about the preparation, structural and optical characterization of CdS thin films and their use as Schottky diode with Aluminum. Thin films of CdS having thickness around 700nm have been deposited by thermal evaporation. The chemical composition of the deposited CdS thin films has been made using EDAX technique. The structural characterization of this films was carried out using XRD. The structure of CdS after the deposition was found to be Cubic. Also, the lattice parameters were evaluated from the XRD data. From TEM of CdS thin films, the polycrystalline nature was confirmed. Optical characterization has been carried out using UV-VIS-IR spectroscopy. The direct as well as indirect band gaps obtained are 1.64eV and 1.48eV respectively. Schottky junctions were formed by a thermal vapor-deposition of 500nm Al films on pre-coated CdS glass substrates. Diode parameters, such as the zero bias barrier height φb0, the flat band barrier height φbf and the ideality factorη, were calculated using thermionic emission theory at room temperature.

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