SIMULATION OF THE TIME-DEPENDENT DIELECTRIC BREAKDOWN IN THE METALLIZATION SYSTEM OF INTEGRATED CIRCUITS OF THE MODERN TOPOLOGICAL LEVEL
Keyword(s):
Low K
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In this work, simulation modeling of processes of the diffusion of ions of a metal barrier in low-k dielectric between two copper lines is performed
2021 ◽
2008 ◽
Vol 23
(6)
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pp. 1802-1808
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Keyword(s):
2017 ◽
Vol 35
(2)
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pp. 021509
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Keyword(s):