scholarly journals Influence of Nd and Ce doping on the structural, optical and electrical properties of V2O5 thin films

2019 ◽  
Vol 14 (30) ◽  
pp. 73-82
Author(s):  
I. K. Jassim
Keyword(s):  
Thin Films ◽  
Spray Pyrolysis Technique ◽  
Chemical Spray Pyrolysis ◽  
X Ray Diffraction ◽  
Transition Band ◽  
X Ray ◽  
Chemical Spray ◽  
V2o5 Thin Films ◽  
P Type ◽  
Nano Grains

Nano-structural of vanadium pentoxide (V2O5) thin films weredeposited by chemical spray pyrolysis technique (CSPT). Nd and Cedoped vanadium oxide films were prepared, adding Neodymiumchloride (NdCl3) and ceric sulfate (Ce(SO4)2) of 3% in separatesolution. These precursor solutions were used to deposit un-dopedV2O5 and doped with Nd and Ce films on the p-type Si (111) andglass substrate at 250°C. The structural, optical and electricalproperties were investigated. The X-ray diffraction study revealed apolycrystalline nature of the orthorhombic structure with thepreferred orientation of (010) with nano-grains. Atomic forcemicroscopy (AFM) was used to characterize the morphology of thefilms. Un-doped V2O5 and doped with 3% concentration of Nd andCe films have direct allowed transition band gap. The mechanisms ofdc-conductivity of un-doped V2O5 and doped with Nd and Ce filmsat the range 303 K to 473 K have been discussed.

Morphological and Structural Study of Nanostructured Tin Dioxide (SnO2) Thin Films by Spray Pyrolysis

2012 ◽  
Vol 626 ◽  
pp. 672-676
Author(s):  
Boon Hoong Ong ◽  
Heng Choy Lee ◽  
Sharifah Bee Abdul Hamid
Keyword(s):  
Thin Films ◽  
Grain Size ◽  
Substrate Temperature ◽  
Spray Pyrolysis ◽  
Tin Dioxide ◽  
Spray Pyrolysis Technique ◽  
Chemical Spray Pyrolysis ◽  
X Ray Diffraction ◽  
X Ray ◽  
Chemical Spray

Nanostructured SnO2 thin films were deposited on glass substrate using chemical spray pyrolysis technique. Three influent synthesis parameters, namely (i) the precursor concentration (0.2M and 0.5M), (ii) the substrate temperature (250°C and 350°C) and (iii) doping with zinc (Zn) were investigated in term of their effects on the morphology and structure of SnO2 thin films. These films were characterized by X-ray diffraction (XRD), field emission scanning electron microscopy (FESEM) and energy dispersive X-ray spectrometry (EDX) techniques. The grain size of the films was observed to increase as the concentration of the precursors is increased. Substrate temperature is proved to be crucial in determining the crystallinity of the films as the films are reported to grow at temperature above 270°C. Besides, the addition of dopant was found to reduce the grain size of the film.

scholarly journals Influence of Ag-Dopant on Structural Optical and Electrical Properties of Cu(1-x)AgxO Thin Films Prepared By Chemical Spray Pyrolysis Technique

2018 ◽  
Vol 4 (5) ◽  
pp. 542-545 ◽  
Author(s):  
R. Shabu ◽  
A. Moses Ezhil Raj
Keyword(s):  
Thin Films ◽  
Band Gap ◽  
Spray Pyrolysis ◽  
Optical Band Gap ◽  
Spray Pyrolysis Technique ◽  
Precursor Solution ◽  
Oxide Semiconductor ◽  
Chemical Spray Pyrolysis ◽  
Chemical Spray Pyrolysis Technique ◽  
Chemical Spray

As major attention has been paid to transition metal oxide semiconductor suitable for solar cell, photo detector and gas sensor, present study embark on the structural, optical and electrical characterization of Ag doped CuO thin films prepared using chemical spray pyrolysis technique at the constant substrate temperature of 350 �C. For Ag doping, various concentrations of silver acetate (0.5-3.0 wt.%) was used in the sprayed precursor solution. Confirmed monoclinic lattice shows the tenorite phase formation of CuO in the pure and Ag doped films. The optical band gap of the films was in the range of 2.4 -3.4 eV. A minimum resistivity of 0.0017x103 ohmcm was achieved in the 0.5 wt.% Ag doped film, and its optical band gap was 2.74 eV.

Formation of p-type Cu3BiS3 absorber thin films by annealing chemically deposited Bi2S3–CuS thin films

1997 ◽  
Vol 12 (3) ◽  
pp. 651-656 ◽  
Author(s):  
P. K. Nair ◽  
L. Huang ◽  
M. T. S. Nair ◽  
Hailin Hu ◽  
E. A. Meyers ◽  
...  
Keyword(s):  
Thin Films ◽  
Visible Region ◽  
Atomic Diffusion ◽  
Optical Coatings ◽  
X Ray Diffraction ◽  
X Ray ◽  
Cell Structures ◽  
Potential Applications ◽  
Xrd Patterns ◽  
P Type

Formation of the ternary compound Cu3BiS3 during annealing of chemically deposited CuS (∼0.3 μm) films on Bi2S3 film (∼0.1 μm on glass substrate) is reported. The interfacial atomic diffusion leading to the formation of the compound during the annealing is indicated in x-ray photoelectron depth profile spectra of the films. The formation of Cu3BiS3 (Wittichenite, JCPDS 9-488) is confirmed by the x-ray diffraction (XRD) patterns. The films are optically absorbing in the entire visible region (absorption coefficient 4 × 104 cm−1 at 2.48 eV or 0.50 μm) and are p-type with electrical conductivity of 102−103 Ω−1 cm−1. Potential applications of these films as optical coatings in the control of solar energy transmittance through glazings and as a p-type absorber film in solar cell structures are indicated.

SnO2:F Thin Films with High Fluorine Contents Produced by Spray Pyrolysis at Constant Substrate Temperature

1996 ◽  
Vol 441 ◽  
Author(s):  
D. R. Acosta ◽  
E. Zironi ◽  
W. Estrada ◽  
E. Montoya
Keyword(s):  
Electron Microscopy ◽  
Thin Films ◽  
Spray Pyrolysis ◽  
Tin Oxide ◽  
Spray Pyrolysis Technique ◽  
Structural Parameters ◽  
Final Concentration ◽  
X Ray Diffraction ◽  
Electrical And Optical Properties ◽  
X Ray

AbstractFluorine doped tin oxide thin films were prepared from solutions with high fluorine contents using the spray pyrolysis technique; the resulting films were studied by electron and X-ray diffraction methods; the resonant nuclear reaction (RNR) method was used to determine the final concentration of fluorine atoms in our films for different doping levels. Also, electrical and optical properties of SnO2:F films were measured and correlated with deposition and structural parameters obtained from X-Ray diffraction and electron microscopy studies.

PROPERTIES OF (Bi0.92Ce0.08)2Ti2O7 THIN FILMS PREPARED ON Si(100) BY CHEMICAL SOLUTION DECOMPOSITION

2009 ◽  
Vol 16 (06) ◽  
pp. 869-873 ◽  
Author(s):  
GUANGHUI XU ◽  
XIANGYANG JING ◽  
YIN ZHANG ◽  
BAIBIAO HUANG
Keyword(s):  
Thin Films ◽  
Phase Stability ◽  
Decomposition Method ◽  
Dielectric Constants ◽  
Ferroelectric Thin Films ◽  
Chemical Solution ◽  
X Ray Diffraction ◽  
X Ray ◽  
Ce Modification ◽  
P Type

( Bi 0.92 Ce 0.08)2 Ti 2 O 7 thin films have been successfully prepared on P-type Si (100) substrates by a chemical solution decomposition method. The structural properties of the films were studied by X-ray diffraction. The phase stability of Bi 2 Ti 2 O 7 was improved after Ce ions were doped. The dielectric constants of ( Bi 0.92 Ce 0.08)2 Ti 2 O 7 thin films annealed at 650° and 700°C were higher than that of Bi 2 Ti 2 O 7 without Ce modification. The thin films annealed at 650°C showed the highest permittivity. The memory windows in the C – V loops were studied, indicating that the thin films were not ferroelectric thin films. All of these results showed that Ce -doped Bi 2 Ti 2 O 7 thin films had potential for DRAM and MOS applications.

Direct preparation and microstructure investigation of p-type transparent conducting Ga-doped SnO2 thin films

2010 ◽  
Vol 25 (S1) ◽  
pp. S36-S39 ◽  
Author(s):  
Tieying Yang ◽  
Xiubo Qin ◽  
Huan-hua Wang ◽  
Quanjie Jia ◽  
Runsheng Yu ◽  
...  
Keyword(s):  
Thin Films ◽  
Rf Magnetron Sputtering ◽  
Photoelectron Spectra ◽  
X Ray Diffraction ◽  
X Ray ◽  
Fine Microstructure ◽  
Direct Preparation ◽  
Sno2 Thin Films ◽  
P Type ◽  
Reactive Rf Magnetron Sputtering

Transparent p-type conducting Ga-doped SnO2 thin films were prepared using reactive rf-magnetron sputtering. Good p-type conduction was directly realized without the need of postdeposition annealing. The p-type conductivity was found to be very sensitive to the growth condition and process, suggesting that the carrier behavior is strongly related to the fine microstructure of the films. The microstructures of the films were characterized using synchrotron X-ray diffraction and specular reflectivity techniques. The valence state of the Ga dopant was measured from X-ray photoelectron spectra to explain the origin of net holes presented in the films.

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