The Impact of Shallow-Trench-Isolation Mechanical Stress on the Hysteresis Effect of Partially Depleted Silicon-on-Insulator n-Type Metal-Oxide-Semiconductor Field Effects

Hysteresis Effect ◽

Silicon On Insulator ◽

Oxide Semiconductor ◽

Field Effects ◽

Trench Isolation ◽

The Impact

Impact of Reducing Shallow Trench Isolation Mechanical Stress on Active Length for 40 nm n-Type Metal–Oxide–Semiconductor Field-Effect Transistors

10.7567/jjap.50.04dc21 ◽

2011 ◽

Vol 50 (4S) ◽

pp. 04DC21 ◽

Cited By ~ 1

Author(s):

Yao-Tsung Huang ◽

San-Lein Wu ◽

Hau-Yu Lin ◽

Cheng-Wen Kuo ◽

Shoou-Jinn Chang ◽

...

Keyword(s):

Metal Oxide ◽

Mechanical Stress ◽

Field Effect ◽

Oxide Semiconductor ◽

Active Length ◽

Impact of Reducing Shallow Trench Isolation Mechanical Stress on Active Length for 40 nm n-Type Metal–Oxide–Semiconductor Field-Effect Transistors

10.1143/jjap.50.04dc21 ◽

2011 ◽

Vol 50 (4) ◽

pp. 04DC21 ◽

Cited By ~ 1

Author(s):

Yao-Tsung Huang ◽

San-Lein Wu ◽

Hau-Yu Lin ◽

Cheng-Wen Kuo ◽

Shoou-Jinn Chang ◽

...

Keyword(s):

Metal Oxide ◽

Mechanical Stress ◽

Field Effect ◽

Oxide Semiconductor ◽

Active Length ◽

Reproducing Subthreshold Characteristics of Metal-Oxide-Semiconductor Field Effect Transistors under Shallow Trench Isolation Mechanical Stress Using a Stress-Dependent Diffusion Model

10.1143/jjap.45.l849 ◽

2006 ◽

Vol 45 (No. 32) ◽

pp. L849-L851

Author(s):

Yi-Ming Sheu ◽

Sheng-Jier Yang ◽

Chih-Chiang Wang ◽

Chih-Sheng Chang ◽

Ming-Jer Chen ◽

...

Keyword(s):

Metal Oxide ◽

Mechanical Stress ◽

Diffusion Model ◽

Field Effect ◽

Oxide Semiconductor ◽

Trench Isolation ◽

Stress Dependent

Temperature Dependence of Shallow-Trench-Isolation Mechanical Stress on n-Channel Metal–Oxide–Semiconductor Field-Effect Transistors

10.1143/jjap.43.4161 ◽

2004 ◽

Vol 43 (7A) ◽

pp. 4161-4162

Author(s):

Jinn-Horng Lai ◽

Jeng Gong ◽

Tsuoe-Hsiang Liao ◽

David Cheng-Hsiung Chen

Keyword(s):

Metal Oxide ◽

Temperature Dependence ◽

Mechanical Stress ◽

Field Effect ◽

Oxide Semiconductor ◽

Fabricating high performance n-channel lateral double diffused metal–oxide–semiconductor transistors utilizing the shallow trench isolation as a salicide blocking mask of the drift region

Current Applied Physics ◽

10.1016/j.cap.2007.10.086 ◽

2009 ◽

Vol 9 (1) ◽

pp. 9-12 ◽

Cited By ~ 3

Author(s):

Kee-Yeol Na ◽

Yeong-Seuk Kim

Keyword(s):

Metal Oxide ◽

High Performance ◽

Oxide Semiconductor ◽

Drift Region ◽

Journal of Vacuum Science & Technology B Microelectronics Processing and Phenomena ◽

Chemical mechanical polishing of shallow trench isolation using the ceria-based high selectivity slurry for sub-0.18 μm complementary metal–oxide–semiconductor fabrication

10.1116/1.1475984 ◽

2002 ◽

Vol 20 (3) ◽

pp. 918 ◽

Cited By ~ 18

Author(s):

Sam-Dong Kim ◽

In-Seok Hwang ◽

Hyung-Moo Park ◽

Jin-Koo Rhee ◽

Chul-Woo Nam

Keyword(s):

Metal Oxide ◽

Chemical Mechanical Polishing ◽

High Selectivity ◽

Mechanical Polishing ◽

Oxide Semiconductor ◽

Trench Isolation ◽

Semiconductor Fabrication

Layout Dependent Induced Leakage and its Prevention with Different Shallow Trench Isolation Schemes in 0.18 µm Dual Gate Complementary Metal Oxide Semiconductor Technology

10.1143/jjap.46.375 ◽

2007 ◽

Vol 46 (1) ◽

pp. 375-377

Author(s):

Seong Yeol Mun ◽

Kyeong Cheol Shin ◽

Sang Bum Huh ◽

Je Il Ju ◽

Jae Yeong Kim ◽

...

Keyword(s):

Metal Oxide ◽

Oxide Semiconductor ◽

Semiconductor Technology ◽

Trench Isolation ◽

Dual Gate

Remarkable Effects of Introduction of SiON Materials into Shallow Trench Isolation Fabrication Process on Metal-Oxide-Semiconductor Field-Effect Transistors

10.1143/jjap.40.462 ◽

2001 ◽

Vol 40 (Part 1, No. 2A) ◽

pp. 462-466 ◽

Cited By ~ 2

Author(s):

Katsuomi Shiozawa ◽

Toshiyuki Oishi ◽

Yuji Abe ◽

Yasunori Tokuda

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Fabrication Process ◽

Oxide Semiconductor ◽

Journal of Vacuum Science & Technology B Nanotechnology and Microelectronics Materials Processing Measurement and Phenomena ◽

Shallow trench isolation stress modification by optimal shallow trench isolation process for sub-65-nm low power complementary metal oxide semiconductor technology

10.1116/1.3359612 ◽

2010 ◽

Vol 28 (2) ◽

pp. 391-397 ◽

Cited By ~ 3

Author(s):

Chan-Yuan Hu ◽

Jone F. Chen ◽

Shih-Chih Chen ◽

Shoou-Jinn Chang ◽

Shih-Ming Wang ◽

...

Keyword(s):

Metal Oxide ◽

Low Power ◽

Oxide Semiconductor ◽

Semiconductor Technology ◽

Isolation Stress ◽

Abnormal Junction Profile of Submicrometer Complementary Metal Oxide Semiconductor Devices with Co Silicidation and Shallow Trench Isolation Processes

Electrochemical and Solid-State Letters ◽

10.1149/1.1403216 ◽

2001 ◽

Vol 4 (11) ◽

pp. G88 ◽

Cited By ~ 2

Author(s):

Chel-Jong Choi ◽

Tae-Yeon Seong ◽

Key-Min Lee ◽

Joo-Hyoung Lee ◽

Young-Jin Park ◽

...

Keyword(s):

Metal Oxide ◽

Semiconductor Devices ◽

Oxide Semiconductor ◽