Electrical analysis of mechanical stress induced by shallow trench isolation [MOSFETs]

2004 ◽  
Author(s):  
C. Gallon ◽  
G. Reimbold ◽  
G. Ghibaudo ◽  
R.A. Blanchi ◽  
R. Gwoziecki ◽  
...  
Keyword(s):  
Mechanical Stress ◽  
Shallow Trench Isolation ◽  
Trench Isolation ◽  
Electrical Analysis

Micro-Raman Spectroscopy Evaluation of the Local Mechanical Stress in Shallow Trench Isolation CMOS Structures: Correlation with Defect Generation and Diode Leakage

1998 ◽  
Author(s):  
I. De Wolf ◽  
G. Groeseneken ◽  
H.E. Maes ◽  
M. Bolt ◽  
K. Barla ◽  
...  
Keyword(s):  
Raman Spectroscopy ◽  
Mechanical Stress ◽  
Defect Formation ◽  
Active Area ◽  
Wet Oxidation ◽  
Leakage Currents ◽  
Shallow Trench Isolation ◽  
Micro Raman Spectroscopy ◽  
Silicon Devices ◽  
Trench Isolation

Abstract It is shown, using micro-Raman spectroscopy, that Shallow Trench Isolation introduces high stresses in the active area of silicon devices when wet oxidation steps are used. These stresses result in defect formation in the active area, leading to high diode leakage currents. The stress levels are highest near the outer edges of line structures and at square structures. They also increase with decreasing active area dimensions.

Channel width dependence of mechanical stress effects induced by shallow trench isolation on device performance of nanoscale nMOSFETs

2012 ◽  
Vol 52 (9-10) ◽  
pp. 1949-1952 ◽  
Author(s):  
Seonhaeng Lee ◽  
Dongwoo Kim ◽  
Cheolgyu Kim ◽  
Chiho Lee ◽  
Jeongsoo Park ◽  
...  
Keyword(s):  
Mechanical Stress ◽  
Channel Width ◽  
Device Performance ◽  
Shallow Trench Isolation ◽  
Stress Effects ◽  
Trench Isolation

Influence of dummy active patterns on mechanical stress induced by spin-on-glass-filled shallow trench isolation in n-MOSFETs

2011 ◽  
Vol 88 (6) ◽  
pp. 882-887 ◽  
Author(s):  
Dongwoo Kim ◽  
Seonhaeng Lee ◽  
T.K. Oh ◽  
S.Y. Cha ◽  
S.J. Hong ◽  
...  
Keyword(s):  
Mechanical Stress ◽  
Shallow Trench Isolation ◽  
Trench Isolation

scholarly journals Identification of Yield Limiting Defects in a 0.5 Micron, Shallow Trench Isolation Technology

1999 ◽  
Author(s):  
Christopher L. Henderson ◽  
Charles E. Hembree ◽  
Jerry M. Soden ◽  
Thomas J. Headley ◽  
Bruce L. Draper
Keyword(s):  
Power Supply ◽  
Random Access ◽  
Shallow Trench Isolation ◽  
Root Cause ◽  
Trench Isolation ◽  
Static Random Access Memories ◽  
Cause Of Failure ◽  
Radiation Hardened ◽  
Supply Current ◽  
Electrical Analysis

Abstract During the development and qualification of a radiation-hardened, 0.5 μm shallow trench isolation technology, several yield-limiting defects were observed. The 256K (32K x 8) static-random access memories (SRAMs) used as a technology characterization vehicle had elevated power supply current during wafer probe testing. Many of the die sites were functional, but exhibited quiescent power supply current (IDDQ) in excess of 100 μA, the present limit for this particular SRAM. Initial electrical analysis indicated that many of the die sites exhibited unstable IDDQ that fluctuated rapidly. We refer to this condition as “jitter.” The IDDQ jitter appeared to be independent of temperature and predominately associated with the larger 256K SRAMs and not as prevalent in the 16K SRAMs (on the same reticle set). The root cause of failure was found to be two major processing problems: salicide bridging and stress-induced dislocations in the silicon island

Mechanical Stress Characterization of Shallow Trench Isolation by Kelvin Probe Force Microscopy

1999 ◽  
Vol 568 ◽  
Author(s):  
Hernan Rueda ◽  
James Slinkman ◽  
Dureseti Chidambarrao ◽  
Leon Moszkowicz ◽  
Phil Kaszuba ◽  
...  
Keyword(s):  
Finite Element ◽  
Work Function ◽  
Mechanical Stress ◽  
Mechanical Strain ◽  
Kelvin Probe Force Microscopy ◽  
Kelvin Probe ◽  
Shallow Trench Isolation ◽  
Force Microscopy ◽  
Trench Isolation

ABSTRACTmethod for characterizing the mechanical stress induced in silicon technology is described. Analysis by scanning Kelvin probe force microscopy (SKPM) coupled with finite-element (FE) mechanical strain simulations is performed. The SKPM technique detects variations in the semiconductor work function due to strain influences on the band gap. This technique is then used to analyze the strain induced by shallow trench isolation processes for electrical isolation. The SKPM measurements agree with the FE simulations qualitatively.

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