Optimization of SEM Analytical Conditions for Low K and Ultra Low K Dielectric Materials

2008 ◽  
Author(s):  
Liu Binghai ◽  
Mo Zhiqiang ◽  
Hua Younan ◽  
Teong Jennifer
Keyword(s):  
Electron Beam ◽  
Radiation Damage ◽  
Decisive Role ◽  
Dielectric Materials ◽  
Condenser Lens ◽  
Probe Current ◽  
Lens Aperture ◽  
Electron Microscopy Analysis ◽  
Damage Process ◽  
Low K

Abstract Electron beam induced radiation damage presents great challenges for the electron microscopy analysis of low k and ultra low k dielectrics due to their beam sensitive nature. In order to minimize the radiation damage, it is necessary to understand the mechanisms behind the damage. This work presents detailed studies regarding the mechanisms behind the effects of probe currents, accelerating voltage and anticharging coating layers on the radiation damage to low/ultralow K dielectrics. The results indicate that the probe current shows a stronger dependence on the size of the condenser lens aperture than the accelerating voltage. Therefore, in terms of the probe current, the condenser lens aperture plays a decisive role in affecting the radiation damage process. In order to minimize the radiation damage, SEM imaging should be conducted with not only a low accelerating voltage but also a small condenser lens aperture to reduce probe current. Based on simulation results, the effects of a coating layer and accelerating voltage are related to the interaction volume and the penetration depth of the electron beam. Pt coating can act as not only an anti-charging layer, but also an effective barrier layer for reducing electron flux that interacts with the low/ultra-low dielectrics.

Variable probe current using a condenser lens in a miniature electron beam column

2009 ◽  
Author(s):  
C. S. Silver ◽  
J. P. Spallas ◽  
L. P. Muray
Keyword(s):  
Electron Beam ◽  
Condenser Lens ◽  
Probe Current

The role of radiation damage to the analysis of composition in electron microscopes

1983 ◽  
Vol 41 ◽  
pp. 380-381
Author(s):  
D. K. McElfresh ◽  
D. G. Howitt
Keyword(s):  
Electron Beam ◽  
Radiation Damage ◽  
Vacancy Concentration ◽  
Analytical Electron Microscopy ◽  
Extreme Case ◽  
Binding Energies ◽  
Local Composition ◽  
Damage Process ◽  
High Concentrations ◽  
Electron Microscopes

The effect of the illuminating electron beam on the local composition of beam sensitive specimens is an important consideration when applying the techniques of analytical electron microscopy (AEM). The decrease in the signal from certain elements is often attributed to their volitalization under beam heating, however, radiation damage to the material by the electron beam is another mechanism which can contribute to compositional changes.The ionization and displacement processes that occur within the region of the specimen irradiated by the electron beam can lead to relatively high concentrations of interstitials. The surrounding material is virtually devoid of these species and so these elements will diffuse down the concentration gradient that is generated and so reduce the X-ray or electron loss signal as the region within the probe is depleted.The radiation damage process will continue as long as the electron beam impinges on the specimen and the presence of high vacancy concentration could induce the displacement of other species as the local binding energies are reduced. In the extreme case one might expect to observe tunnels of condensed vacancies arising from the diffusion process.

TEM/FIB Technical Solutions to Electron Beam Induced Radiation Damage to Low K/Ultra Low K Dielectrics in Semiconductor Failure Analysis

2012 ◽  
Author(s):  
Liu Binghai ◽  
Chen Ye ◽  
Mo Zhiqiang ◽  
Zhao Si Ping ◽  
Wang Chue Yuin ◽  
...  
Keyword(s):  
Electron Beam ◽  
Sample Preparation ◽  
Failure Analysis ◽  
Radiation Damage ◽  
Low Dose ◽  
Imaging Techniques ◽  
Single Beam ◽  
Electron Microscopes ◽  
Technical Solutions ◽  
Low K

Abstract Electron-beam induced radiation damage can give rise to large structural collapse and deformation of low k and ultra low k IMD in semiconductor devices, posing great challenges for failure analysis by electron microscopes. Such radiation damage has been frequently observed during both sample preparation by dual-beam FIB and TEM imaging. To minimize radiation damage, in this work we performed systematic studies on every possible failure analysis step that could introduce radiation damage, i.e., pre-FIB sample preparation, FIB milling, and TEM imaging. Based on these studies, we utilized comprehensive technical solutions to radiation damage by each failure analysis step, i.e., low-dose/low-kV FIB and low-dose TEM techniques. We propose and utilize the low-dose TEM imaging techniques on conventional TEM tools without using low-dose imaging control interface/software. With these new methodologies or techniques, the electron-beam induced radiation damage to ultra low k IMD has been successfully minimized, and the combination of single-beam FIB milling and low-dose TEM imaging techniques can reduce structure collapse and shrinkage to almost zero.

Nondestructive Defect Imaging through Image Intensity Analysis

2007 ◽  
Author(s):  
J. Demarest ◽  
D. Bearup ◽  
A. Dalton ◽  
L. Hahn ◽  
B. Redder ◽  
...  
Keyword(s):  
Electron Beam ◽  
Dielectric Material ◽  
Natural Extension ◽  
Dielectric Materials ◽  
Intensity Analysis ◽  
Semiconductor Technology ◽  
Pixel Location ◽  
Imaging Mode ◽  
Defect Imaging ◽  
Low K

Abstract The continually shrinking dimensions of today’s semiconductor technology occasionally allow for novel approaches in imaging defects. It has become desirable to image subsurface voids prior to cross sectioning and some efforts have been made to address this need including the construction of specialized instrumentation [1]. The thickness of the metallization levels at the 65 nm technology node and smaller now allow for the use of the electron beam in a scanning electron microscope (SEM) as a material sensor. At high accelerating voltages (between 20-30 kV) in backscatter imaging mode the numerical gray level values at each pixel location can correlate to the amount of material directly under the electron beam at that location. This is particularly evident when dealing with defined geometries and material sets offering high contrast changes between materials such as those found in semiconductor technology like copper (Cu) metal and conventional dielectric materials. As a result, subsurface voids can be mapped to a reasonable representation prior to cross sectioning and precise pinpointing of the defect location in test structures can occur. This paper discusses this methodology on 65 nm technology with Cu metal lines in a low-k dielectric material for a two level metal test structure. To some extent this work represents a natural extension of a paper presented previously by the author [2].

Anisotropic radiation damage of potassium tetracyano platinate (KCP)

1978 ◽  
Vol 36 (1) ◽  
pp. 392-393
Author(s):  
N. Uyeda ◽  
E. J. Kirkland ◽  
B. M. Siegel
Keyword(s):  
Electron Diffraction ◽  
Radiation Damage ◽  
Structural Changes ◽  
High Resolution Electron Microscopy ◽  
Radiation Sensitivity ◽  
Resolution Electron ◽  
Damage Process ◽  
Diffraction Patterns ◽  
Fading Rate

The direct observation of structural change by high resolution electron microscopy will be essential for the better understanding of the damage process and its mechanism. However, this approach still involves some difficulty in quantitative interpretation mostly being due to the quality of obtained images. Electron diffraction, using crystalline specimens, has been the method most frequently applied to obtain a comparison of radiation sensitivity of various materials on the quantitative base. If a series of single crystal patterns are obtained the fading rate of reflections during the damage process give good comparative measures. The electron diffraction patterns also render useful information concerning the structural changes in the crystal. In the present work, the radiation damage of potassium tetracyano-platinate was dealt with on the basis two dimensional observation of fading rates of diffraction spots. KCP is known as an ionic crystal which possesses “one dimensional” electronic properties and it would be of great interest to know if radiation damage proceeds in a strongly asymmetric manner.

Studies of the Coefficient of Thermal Expansion of Low-k ILD Materials by X-Ray Reflectivity

2006 ◽  
Vol 914 ◽  
Author(s):  
George Andrew Antonelli ◽  
Tran M. Phung ◽  
Clay D. Mortensen ◽  
David Johnson ◽  
Michael D. Goodner ◽  
...  
Keyword(s):  
Thin Films ◽  
Thermal Expansion ◽  
Coefficient Of Thermal Expansion ◽  
Chemical Vapor ◽  
Dielectric Materials ◽  
Free Standing ◽  
Dielectric Thin Films ◽  
X Ray ◽  
Chemical Vapor Deposited ◽  
Low K

AbstractThe electrical and mechanical properties of low-k dielectric materials have received a great deal of attention in recent years; however, measurements of thermal properties such as the coefficient of thermal expansion remain minimal. This absence of data is due in part to the limited number of experimental techniques capable of measuring this parameter. Even when data does exist, it has generally not been collected on samples of a thickness relevant to current and future integrated processes. We present a procedure for using x-ray reflectivity to measure the coefficient of thermal expansion of sub-micron dielectric thin films. In particular, we elucidate the thin film mechanics required to extract this parameter for a supported film as opposed to a free-standing film. Results of measurements for a series of plasma-enhanced chemical vapor deposited and spin-on low-k dielectric thin films will be provided and compared.

Morphological and structural evolution of WS2 nanosheets irradiated with an electron beam

2015 ◽  
Vol 17 (4) ◽  
pp. 2678-2685 ◽  
Author(s):  
Yuqing Wang ◽  
Yi Feng ◽  
Yangming Chen ◽  
Fei Mo ◽  
Gang Qian ◽  
...  
Keyword(s):  
Electron Beam ◽  
Radiation Damage ◽  
Structural Evolution ◽  
Damage Mechanism ◽  
P Movement ◽  
Ws2 Nanosheets

Movement of atoms and the radiation damage mechanism in irradiated WS2 nanosheets.

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