Optimization of TEM Sample Preparation to Reduce the Overlapping of TEM Images

2014 ◽  
Author(s):  
Shuqing Duan ◽  
Summer Chen ◽  
Paul Yu ◽  
Ming Li ◽  
Mark Zhang ◽  
...  
Keyword(s):  
Sample Preparation ◽  
Cross Section ◽  
Ion Beam ◽  
Top Down ◽  
Preparation Methods ◽  
Plan View ◽  
Transmission Electron ◽  
Focus Ion Beam ◽  
Sample Preparation Methods ◽  
Section Sample

Abstract This paper reports optimized Transmission Electron Microscopy (TEM) sample preparation methods with Focus Ion Beam (FIB), which are used to reduce or avoid the overlapping of TEM images. Several examples of optimized cross-section sample preparation on 38nm and 45nm pitch are provided with general and novel FIB methods. And its application to plan view TEM sample preparation is also shown. The results establish that the proposed method is useful to reduce or remove pattern overlapping effects in dense structures and can produce higher quality TEM images than can be obtained using conventional top-down FIB-based TEM preparation methods.

scholarly journals Having Your Cake and Eating It Too: A Procedure for Obtaining Plan View and Cross Section TEM Images from the Same Site

2005 ◽  
Vol 13 (1) ◽  
pp. 26-29 ◽  
Author(s):  
R.B. Irwin ◽  
A. Anciso ◽  
P.J. Jones ◽  
C. Patton
Keyword(s):  
Sample Preparation ◽  
Cross Section ◽  
Focused Ion Beam ◽  
Bulk Material ◽  
Ion Beam ◽  
Preparation Technique ◽  
Ion Milling ◽  
Plan View ◽  
Transmission Electron ◽  
Final Sample

Sample preparation for Transmission Electron Microscopy (TEM) is usually performed such that the final sample orientation is either a cross section or a plan view of the bulk material, as shown schematically in Figure 1. The object of any sample preparation technique, for either of these two orientations, is to thin a selected volume of the sample from its initial bulk state to electron transparency, ~ 100nm thick. In doing so, the final sample must be mechanically stable, vacuum compatible, and, most of all, unchanged from the initial bulk material. Many techniques have been used to achieve this goal: cleaving, sawing, mechanical polishing, chemical etching, ion milling, focused ion beam (FIB) milling, and many others.

Physical Failure Analysis Techniques for Front-End-of-Line Defect Analysis

2016 ◽  
Author(s):  
Dirk Doyle ◽  
Lawrence Benedict ◽  
Fritz Christian Awitan
Keyword(s):  
Cross Section ◽  
Focused Ion Beam ◽  
Ion Beam ◽  
Gate Oxide ◽  
Top Down ◽  
New Techniques ◽  
First Case ◽  
Transmission Electron ◽  
Scanning Transmission

Abstract Novel techniques to expose substrate-level defects are presented in this paper. New techniques such as inter-layer dielectric (ILD) thinning, high keV imaging, and XeF2 poly etch overflow are introduced. We describe these techniques as applied to two different defects types at FEOL. In the first case, by using ILD thinning and high keV imaging, coupled with focused ion beam (FIB) cross section and scanning transmission electron microscopy (STEM,) we were able to judge where to sample for TEM from a top down perspective while simultaneously providing the top down images giving both perspectives on the same sample. In the second case we show retention of the poly Si short after removal of CoSi2 formation on poly. Removal of the CoSi2 exposes the poly Si such that we can utilize XeF2 to remove poly without damaging gate oxide to reveal pinhole defects in the gate oxide. Overall, using these techniques have led to 1) increased chances of successfully finding the defects, 2) better characterization of the defects by having a planar view perspective and 3) reduced time in localizing defects compared to performing cross section alone.

TEM Characterization of As-Deposited and Annealed Ni/Al Multilayer Thin Film

2010 ◽  
Vol 16 (6) ◽  
pp. 662-669 ◽  
Author(s):  
S. Simões ◽  
F. Viana ◽  
A.S. Ramos ◽  
M.T. Vieira ◽  
M.F. Vieira
Keyword(s):  
Electron Microscopy ◽  
Thin Films ◽  
Transmission Electron Microscopy ◽  
Cross Section ◽  
Ion Beam ◽  
Microstructural Characterization ◽  
Multilayer Thin Films ◽  
Tem Analysis ◽  
Plan View ◽  
Transmission Electron

AbstractReactive multilayer thin films that undergo highly exothermic reactions are attractive choices for applications in ignition, propulsion, and joining systems. Ni/Al reactive multilayer thin films were deposited by dc magnetron sputtering with a period of 14 nm. The microstructure of the as-deposited and heat-treated Ni/Al multilayers was studied by transmission electron microscopy (TEM) and scanning transmission electron microscopy (STEM) in plan view and in cross section. The cross-section samples for TEM and STEM were prepared by focused ion beam lift-out technique. TEM analysis indicates that the as-deposited samples were composed of Ni and Al. High-resolution TEM images reveal the presence of NiAl in small localized regions. Microstructural characterization shows that heat treating at 450 and 700°C transforms the Ni/Al multilayered structure into equiaxed NiAl fine grains.

scholarly journals Atom Probe Tomography for Catalysis Applications: A Review

2019 ◽  
Vol 9 (13) ◽  
pp. 2721 ◽  
Author(s):  
Cédric Barroo ◽  
Austin J. Akey ◽  
David C. Bell
Keyword(s):  
Sample Preparation ◽  
Atom Probe Tomography ◽  
Ion Beam ◽  
3D Structure ◽  
Atom Probe ◽  
Atomic Scale ◽  
High Mass ◽  
Preparation Methods ◽  
Catalytic Materials ◽  
Sample Preparation Methods

Atom probe tomography is a well-established analytical instrument for imaging the 3D structure and composition of materials with high mass resolution, sub-nanometer spatial resolution and ppm elemental sensitivity. Thanks to recent hardware developments in Atom Probe Tomography (APT), combined with progress on site-specific focused ion beam (FIB)-based sample preparation methods and improved data treatment software, complex materials can now be routinely investigated. From model samples to complex, usable porous structures, there is currently a growing interest in the analysis of catalytic materials. APT is able to probe the end state of atomic-scale processes, providing information needed to improve the synthesis of catalysts and to unravel structure/composition/reactivity relationships. This review focuses on the study of catalytic materials with increasing complexity (tip-sample, unsupported and supported nanoparticles, powders, self-supported catalysts and zeolites), as well as sample preparation methods developed to obtain suitable specimens for APT experiments.

scholarly journals A Novel Sample Preparation Method for Frontside Inspection of GaN Devices after Backside Analysis

2021 ◽  
Author(s):  
Tony Colpaert ◽  
Stefaan Verleye
Keyword(s):  
Electron Microscopy ◽  
Sample Preparation ◽  
Preparation Method ◽  
Ion Beam ◽  
Sample Preparation Method ◽  
Tem Analysis ◽  
Transmission Electron ◽  
Die Surface ◽  
Emission Microscopy ◽  
Focus Ion Beam

Abstract Frontside die inspection by Scanning Electron Microscopy (SEM) is critical to investigate failures that appear dispersed over the GaN die surface and that will be very difficult to localize by the typical Focus Ion Beam (FIB) or Transmission Electron Microscopy (TEM) analysis. Frontside sample preparation is; however, extremely challenging if the device was already subjected to sample preparation for backside Photo Emission Microscopy (PEM). In this paper, a novel sample preparation method is presented where all front side layers are removed and only the 5μm GaN die is left for inspection.

Productive Polishing TEM Sample Preparation Methodology Development

2014 ◽  
Author(s):  
Huisheng Yu ◽  
Shuqing Duan ◽  
Ming Li ◽  
Qihua Zhang ◽  
Wei-Ting Kary Chien
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Sample Preparation ◽  
Batch Process ◽  
Preparation Methods ◽  
Methodology Development ◽  
Transmission Electron ◽  
Application Fields ◽  
Single Batch ◽  
Sample Preparation Methods

Abstract In this paper, three productive polishing transmission electron microscopy (TEM) sample preparation methods are reported. The methods are studied to improve the efficiency and expand the application fields. Method 1 and 2 address expanding conventional polishing method application on same or similar pattern samples. Method 1 used a laser mark to identify one of the sample; and method 2 used a Pt coated glass inserted between samples or a direct deposition of Pt on one of the samples. Method 3 was developed facilitate stacking three or more samples into a single, batch process block and improved the efficiency greatly.

TEM Sample Preparation for the Semiconductor Industry — Part 3

1996 ◽  
Vol 4 (6) ◽  
pp. 24-25
Author(s):  
John F. Walker
Keyword(s):  
Sample Preparation ◽  
Cross Section ◽  
Focused Ion Beam ◽  
Ion Beam ◽  
Semiconductor Industry ◽  
Focused Ion Beams ◽  
Accurate Identification ◽  
Tem Analysis ◽  
Site Specific ◽  
Transmission Electron

Part 1 of this series described how focused ion beam (FIB) microsurgery is used to successfully cross-section and prepare materialspecific samples for SEM and TEM analysis. In Part 2, we detailed how FIB is also the tool of choice to prepare site-specific samples, particularly for transmission electron microscopy (TEM) analysis. In this final article of this series, we describe actual sample preparation, cutting a selected area la size and mounting it on a grid for FIB preparation. Focused ion beams are very useful in preparing TEM specimens that have unique characteristics. In particular, the ability of such systems to image submicron features within a structure has allowed accurate identification of the precise place to make a membrane.

Wedge Cleaving and Ultramicrotomy as Alternative TEM Sample Preparation Methods in Materials Science

1990 ◽  
Vol 199 ◽  
Author(s):  
P. Ruterana ◽  
D. Laub ◽  
P-A. Buffat
Keyword(s):  
Sample Preparation ◽  
Cross Section ◽  
Chemical Etching ◽  
Materials Science ◽  
Development Stage ◽  
Thin Layers ◽  
Preparation Methods ◽  
Faithful Interpretation ◽  
Sample Preparation Methods ◽  
Lower Angle

ABSTRACTThe use of two methods for preparation of TEM samples has been investigated. It has been possible to show the practical details of the wedge cleaving method and illustrate it with original results on III-V semiconductors and on metallic thin layers on Silicon. Chemical etching of AlGaAs in heterostructures was clearly observed and can further be quantified. Preferred oxidation of AlAs was shown to be important this can be a problem to a faithful interpretation of images from cross section samples prepared in more conventional ways. Efficient microtomy for use in materials science is still in the development stage, however we think to have found the best conditions for sectioning very soft metals like copper. We hope to decrease the compression in these materials by using lower angle diamond knives

scholarly journals Experience with a Dicing Saw for Rapid Pre-FIB TEM Sample Preparation

2005 ◽  
Vol 13 (2) ◽  
pp. 26-29
Author(s):  
Jim Conner ◽  
James Beck ◽  
Bryan Tracy
Keyword(s):  
Sample Preparation ◽  
Cross Section ◽  
Focused Ion Beam ◽  
Ion Beam ◽  
Sample Holder ◽  
Plan View ◽  
Site Specific ◽  
Area Of Interest ◽  
Sample Edge ◽  
Unusual Amount

Since the publication of the use of a dicing saw for TEM sample preparation, several analytical labs have adopted this method as standard practice for site-specific cross section and plan view samples. In this article, we would like to provide additional practical details of these procedures, and describe several extensions, including useful notes on batch processing, preparing samples with an area of interest very close to the sample edge, and a Focused Ion Beam (FIB)-compatible sample holder. We present an unusual amount of detail in these processes to show some of the evolution of the method since its introduction and to allow others to easily reproduce these results.

New Methods for Cross-Section Sample Preparation Using Broad Argon Ion Beam

2007 ◽  
Vol 13 (S02) ◽  
Author(s):  
K Ogura ◽  
M Kamidaira ◽  
S Asahina ◽  
N Erdman
Keyword(s):  
Sample Preparation ◽  
Cross Section ◽  
Ion Beam ◽  
New Methods ◽  
Argon Ion ◽  
Section Sample
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