scholarly journals Having Your Cake and Eating It Too: A Procedure for Obtaining Plan View and Cross Section TEM Images from the Same Site

2005 ◽  
Vol 13 (1) ◽  
pp. 26-29 ◽  
Author(s):  
R.B. Irwin ◽  
A. Anciso ◽  
P.J. Jones ◽  
C. Patton
Keyword(s):  
Sample Preparation ◽  
Cross Section ◽  
Focused Ion Beam ◽  
Bulk Material ◽  
Ion Beam ◽  
Preparation Technique ◽  
Ion Milling ◽  
Plan View ◽  
Transmission Electron ◽  
Final Sample

Sample preparation for Transmission Electron Microscopy (TEM) is usually performed such that the final sample orientation is either a cross section or a plan view of the bulk material, as shown schematically in Figure 1. The object of any sample preparation technique, for either of these two orientations, is to thin a selected volume of the sample from its initial bulk state to electron transparency, ~ 100nm thick. In doing so, the final sample must be mechanically stable, vacuum compatible, and, most of all, unchanged from the initial bulk material. Many techniques have been used to achieve this goal: cleaving, sawing, mechanical polishing, chemical etching, ion milling, focused ion beam (FIB) milling, and many others.

The Focused Ion Beam Fold-Out: Sample Preparation Method for Transmission Electron Microscopy

2009 ◽  
Vol 15 (6) ◽  
pp. 558-563 ◽  
Author(s):  
Herman Carlo Floresca ◽  
Jangbae Jeon ◽  
Jinguo G. Wang ◽  
Moon J. Kim
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Sample Preparation ◽  
Focused Ion Beam ◽  
Ion Beam ◽  
Ion Milling ◽  
Plan View ◽  
Site Specific ◽  
Area Of Interest ◽  
Transmission Electron

AbstractWe have developed the focused ion beam (FIB) fold-out technique, for transmission electron microscopy (TEM) sample preparation in which there is no fine polishing or dimpling, thus saving turnaround time. It does not require a nanomanipulator yet is still site specific. The sample wafer is cut to shape, polished down, and then placed in a FIB system. A tab containing the area of interest is created by ion milling and then “folded out” from the bulk sample. This method also allows a plan-view of the sample by removing material below the wafer's surface film or device near the polished edge. In the final step, the sample is thinned to electron transparency, ready to be analyzed in the TEM. With both a cross section and plan-view, our technique gives microscopists a powerful tool in analyzing multiple zone axes in one TEM session. The nature of the polished sample edge also includes the ability to sample many areas, allowing the user to examine a very large device or sample. More importantly, this technique could make multiple site-specific e-beam transparent specimens in one polished sample, which is difficult to do when prepared by other methods.

Cutting-Edge Sample Preparation from FIB to Ar Concentrated Ion Beam Milling of Advanced Semiconductor Devices

2020 ◽  
Author(s):  
C.S. Bonifacio ◽  
P. Nowakowski ◽  
R. Li ◽  
M.L. Ray ◽  
P.E. Fischione ◽  
...  
Keyword(s):  
Sample Preparation ◽  
Failure Analysis ◽  
Focused Ion Beam ◽  
Ion Beam ◽  
Semiconductor Devices ◽  
Specific Area ◽  
Cutting Edge ◽  
Preparation Technique ◽  
Ion Milling ◽  
Sample Preparation Technique

Abstract Fast and accurate examination from the bulk to the specific area of the defect in advanced semiconductor devices is critical in failure analysis. This work presents the use of Ar ion milling methods in combination with Ga focused ion beam (FIB) milling as a cutting-edge sample preparation technique from the bulk to specific areas by FIB lift-out without sample-preparation-induced artifacts. The result is an accurately delayered sample from which electron-transparent TEM specimens of less than 15 nm are obtained.

TEM FIB Lift-Out of Mount Saint Helens Volcanic Ash

1999 ◽  
Vol 5 (S2) ◽  
pp. 908-909
Author(s):  
J.L. Drown-MacDonald ◽  
B.I. Prenitzer ◽  
T.L. Shofner ◽  
L.A. Giannuzzi
Keyword(s):  
Cross Sections ◽  
Volcanic Ash ◽  
Focused Ion Beam ◽  
Ion Beam ◽  
Specimen Preparation ◽  
Preparation Technique ◽  
Tem Analysis ◽  
Plan View ◽  
Transmission Electron ◽  
Silver Paint

Focused Ion Beam (FIB) specimen preparation for both scanning and transmission electron microscopy (SEM and TEM respectively) has seen an increase in usage over the past few years. The advantage to the FIB is that site specific cross sections (or plan view sections) may be fabricated quickly and reproducibly from numerous types of materials using a finely focused beam of Ga+ ions [1,2]. It was demonstrated by Prenitzer et al. that TEM specimens may be acquired from individual Zn powder particles by employing the FIB LO specimen preparation technique [3]. In this paper, we use the FIB LO technique to prepare TEM specimens from Mount Saint Helens volcanic ash.Volcanic ash from Mount Saint Helens was obtained at the Microscopy and Microanalysis 1998 meeting in Atlanta. TEM analysis of the ash was performed using the FIB lift out technique [1]. Ash powders were dusted onto an SEM sample stud that had been coated with silver paint.

On the recrystallization of electrodeposited zinc during mechanical polishing to electron transparency

1991 ◽  
Vol 49 ◽  
pp. 1106-1107
Author(s):  
L. A. Giannuzzi ◽  
P. R. Howell ◽  
H. W. Pickering ◽  
W. R. Bitler
Keyword(s):  
Sample Preparation ◽  
Bulk Material ◽  
Ion Beam ◽  
Primary Concern ◽  
Preparation Technique ◽  
Ion Milling ◽  
Tem Analysis ◽  
Sample Preparation Technique ◽  
Thin Foils ◽  
Recent Developments

A primary concern involving transmission electron microscopy (TEM) analysis is whether the electron transparent region under investigation is representative of the bulk material. TEM is frequently employed to examine the microstructure of electrodeposited materials due to their small grain size and high dislocation density. Previous work in this laboratory on palladium electrodeposits has shown that deformation twins and diffusion induced recrystallization may be induced during preparation of thin foils using both twin jet electropolishing and ion beam thinning. Recent developments in TEM sample preparation in the physical sciences include a procedure for the cross-section of heterogeneous layered materials which reduces or eliminates the need for ion milling. In this sample preparation technique, a tripod polisher device is used to mechanically polish the specimen to electron transparency. The purpose of this paper is to report on the influence of the tripod polisher sample preparation technique, on the microstructure of zinc electrodeposits.

Optimization of TEM Sample Preparation to Reduce the Overlapping of TEM Images

2014 ◽  
Author(s):  
Shuqing Duan ◽  
Summer Chen ◽  
Paul Yu ◽  
Ming Li ◽  
Mark Zhang ◽  
...  
Keyword(s):  
Sample Preparation ◽  
Cross Section ◽  
Ion Beam ◽  
Top Down ◽  
Preparation Methods ◽  
Plan View ◽  
Transmission Electron ◽  
Focus Ion Beam ◽  
Sample Preparation Methods ◽  
Section Sample

Abstract This paper reports optimized Transmission Electron Microscopy (TEM) sample preparation methods with Focus Ion Beam (FIB), which are used to reduce or avoid the overlapping of TEM images. Several examples of optimized cross-section sample preparation on 38nm and 45nm pitch are provided with general and novel FIB methods. And its application to plan view TEM sample preparation is also shown. The results establish that the proposed method is useful to reduce or remove pattern overlapping effects in dense structures and can produce higher quality TEM images than can be obtained using conventional top-down FIB-based TEM preparation methods.

TEM Sample Preparation for the Semiconductor Industry — Part 3

1996 ◽  
Vol 4 (6) ◽  
pp. 24-25
Author(s):  
John F. Walker
Keyword(s):  
Sample Preparation ◽  
Cross Section ◽  
Focused Ion Beam ◽  
Ion Beam ◽  
Semiconductor Industry ◽  
Focused Ion Beams ◽  
Accurate Identification ◽  
Tem Analysis ◽  
Site Specific ◽  
Transmission Electron

Part 1 of this series described how focused ion beam (FIB) microsurgery is used to successfully cross-section and prepare materialspecific samples for SEM and TEM analysis. In Part 2, we detailed how FIB is also the tool of choice to prepare site-specific samples, particularly for transmission electron microscopy (TEM) analysis. In this final article of this series, we describe actual sample preparation, cutting a selected area la size and mounting it on a grid for FIB preparation. Focused ion beams are very useful in preparing TEM specimens that have unique characteristics. In particular, the ability of such systems to image submicron features within a structure has allowed accurate identification of the precise place to make a membrane.

scholarly journals Experience with a Dicing Saw for Rapid Pre-FIB TEM Sample Preparation

2005 ◽  
Vol 13 (2) ◽  
pp. 26-29
Author(s):  
Jim Conner ◽  
James Beck ◽  
Bryan Tracy
Keyword(s):  
Sample Preparation ◽  
Cross Section ◽  
Focused Ion Beam ◽  
Ion Beam ◽  
Sample Holder ◽  
Plan View ◽  
Site Specific ◽  
Area Of Interest ◽  
Sample Edge ◽  
Unusual Amount

Since the publication of the use of a dicing saw for TEM sample preparation, several analytical labs have adopted this method as standard practice for site-specific cross section and plan view samples. In this article, we would like to provide additional practical details of these procedures, and describe several extensions, including useful notes on batch processing, preparing samples with an area of interest very close to the sample edge, and a Focused Ion Beam (FIB)-compatible sample holder. We present an unusual amount of detail in these processes to show some of the evolution of the method since its introduction and to allow others to easily reproduce these results.

FIB-Based Sample Preparation for Localized SCM and SSRM

2018 ◽  
Author(s):  
Frédéric Lorut ◽  
Alexia Valéry ◽  
Nicolas Chevalier ◽  
Denis Mariolle
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Sample Preparation ◽  
Cross Section ◽  
Focused Ion Beam ◽  
Ion Beam ◽  
Side View ◽  
Transmission Electron ◽  
Acceleration Voltage ◽  
Top View

Abstract Dopants imaging using scanning capacitance microscopy (SCM) and scanning spreading resistance microscopy are used for identifying doped areas within a device, the latter being analyzed either in a top view or in a side view. This paper presents a sample preparation workflow based on focused ion beam (FIB) use. A discussion is then conducted to assess advantages of the method and factors to monitor vigilantly. Dealing with FIB machining, any sample preparation geometry can be achieved, as it is for transmission electron microscopy (TEM) sample preparation: cross-section, planar, or inverted TEM preparation. This may pave the way to novel SCM imaging opportunities. As FIB milling generates a parasitic gallium implanted layer, a mechanical polishing step is needed to clean the specimen prior to SCM imaging. Efforts can be conducted to reduce the thickness of this layer, by reducing the acceleration voltage of the incident gallium ions, to ease sample cleaning.

A Selected Area Planar TEM (SAPTEM) Sample Preparation Procedure for Failure Analysis of Integrated Circuits

1998 ◽  
Author(s):  
S. Subramanian ◽  
P. Schani ◽  
E. Widener ◽  
P. Liston ◽  
J. Moss ◽  
...  
Keyword(s):  
Integrated Circuits ◽  
Sample Preparation ◽  
Failure Analysis ◽  
Cross Section ◽  
Ion Beam ◽  
Preparation Technique ◽  
Mechanical Grinding ◽  
Cross Sectional ◽  
Plan View ◽  
The Cross

Abstract A selected area planar TEM (SAPTEM) sample preparation technique for failure analysis of integrated circuits using a transmission electron microscope has been developed. The technique employs a combination of mechanical grinding, selective wet/dry chemical etching (if required) and a two step focused ion beam IIFIB) milling. The mechanical grinding steps include: (a) a backside grind to achieve a die thickness less than 30 µm, (b) the support half ring glue, and (c) a cross-section grind from one side to reach less than 35 pm to the failing site. A selective wet or dry chemical etch is applied before, between,, or after FIB thinning depending on the nature of problem and device components. The FIB milling steps involve: (is) a high ion current cross-sectional cut to reach as close as 5-8 µm to the area of interest (b) a final planar thinning with the ion beam parallel to the surface of the die. The plan view procedure offers unique geometric advantage over the cross-section method for failure analysis of problems that are limited to silicon or certain layers of the device. Iln the cross-sectional approach, a thin section (thickness less than 250 µm) of a device is available for failure analysis, whereas in the planar procedure a 20 µm2 area of any layer (thickness less than 250 µm) of the device is available. The above advantage has been successfully exploited to identify and solve the following prablems in fast static random access memories (FSRAM): (i) random gateoxide rupture that resulted in single bit failures, (ii) random dislocations from the buried contact trenching that caused single bit failures and general silicon defectivity (e.g. implant damage and spacer edge defects), and (iii) interracial reactions.

Revisiting the FIB TEM Lift-Out Specimen Preparation Technique

2000 ◽  
Vol 6 (S2) ◽  
pp. 508-509
Author(s):  
L. A. Giannuzzi ◽  
F. A. Stevie
Keyword(s):  
Focused Ion Beam ◽  
Ion Beam ◽  
Subsequent Development ◽  
Specimen Preparation ◽  
Preparation Technique ◽  
Tem Analysis ◽  
Plan View ◽  
Geological Materials ◽  
Transmission Electron ◽  
Primary Advantage

In recent years, the focused ion beam (FIB) instrument has developed into a mainstay tool for the production of specimens for both scanning and transmission electron microscopy ((S)TEM). The inception and subsequent development of the FIB TEM lift-out (LO) technique has enabled electron transparent membranes of generally uniform thickness to be produced for TEM analysis. In general, the primary advantage of the FIB is that site specific sections may be fabricated quickly (e.g., < 1 hour) and reproducibly. Specifically, the FIB LO technique has been used extensively in our laboratories to produce on the order of a thousand Si-based specimens per year and hundreds of other specimens per year that have included metals, ceramics, composites, biological materials, geological materials, polymers, particles, and fibers, prepared in cross-section, plan view, and from fracture surfaces.

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