Pulsed Laser Stimulation Coupled with Optical Failure Analysis Technique—A Methodology to Help Space Application Electrical Designers

Abstract Pulsed laser for radiation sensitivity evaluation has become a common tool used in research and industrial laboratory. This paper aims to highlight an approach to understand weaknesses of a component under radiation environment using a short pulsed width laser beam coupled to thermography technique, heavy ions test inputs and physical analysis. This paper is based on a study of a PWM device embedded on voltage converter.

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Irradiation Induced Changes in Semiconducting Thin Films

Defect and Diffusion Forum ◽

10.4028/www.scientific.net/ddf.341.181 ◽

2013 ◽

Vol 341 ◽

pp. 181-210 ◽

Cited By ~ 1

Author(s):

S.K. Tripathi

Keyword(s):

Thin Films ◽

Solar Cells ◽

Heavy Ions ◽

Semiconductor Device ◽

High Energy ◽

Device Fabrication ◽

Electrical Performance ◽

Radiation Environment ◽

Extended Defects ◽

Semiconducting Thin Films

High-energy electron, proton, neutron, photon and ion irradiation of semiconductor diodes and solar cells has long been a topic of considerable interest in the field of semiconductor device fabrication. The inevitable damage production during the process of irradiation is used to study and engineer the defects in semiconductors. In a strong radiation environment in space, the electrical performance of solar cells is degraded due to direct exposure to energetically charged particles. A considerable amount of work has been reported on the study of radiation damage in various solar cell materials and devices in the recent past. In most cases, high-energy heavy ions damage the material by producing a large amount of extended defects, but high-energy light ions are suitable for producing and modifying the intrinsic point defects. The defects can play a variety of electronically active roles that affect the electrical, structural and optical properties of a semiconductor. This review article aims to present an overview of the advancement of research in the modification of glassy semiconducting thin films using different types of radiations (light, proton and swift heavy ions). The work which has been done in our laboratory related to irradiation induced effects in semiconducting thin films will also be compared with the existing literature.

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SEE Sensitivity Evaluation for Commercial 16 nm SRAM-FPGA

Electronics ◽

10.3390/electronics8121531 ◽

2019 ◽

Vol 8 (12) ◽

pp. 1531 ◽

Cited By ~ 1

Author(s):

Chang Cai ◽

Shuai Gao ◽

Peixiong Zhao ◽

Jian Yu ◽

Kai Zhao ◽

...

Keyword(s):

Integrated Circuits ◽

Cross Sections ◽

Radiation Effects ◽

Large Scale ◽

Random Access ◽

Radiation Sensitivity ◽

Heavy Ion ◽

High Energy ◽

Radiation Environment ◽

Single Event

Radiation effects can induce severe and diverse soft errors in digital circuits and systems. A Xilinx commercial 16 nm FinFET static random-access memory (SRAM)-based field-programmable gate array (FPGA) was selected to evaluate the radiation sensitivity and promote the space application of FinFET ultra large-scale integrated circuits (ULSI). Picosecond pulsed laser and high energy heavy ions were employed for irradiation. Before the tests, SRAM-based configure RAMs (CRAMs) were initialized and configured. The 100% embedded block RAMs (BRAMs) were utilized based on the Vivado implementation of the compiled hardware description language. No hard error was observed in both the laser and heavy-ion test. The thresholds for laser-induced single event upset (SEU) were ~3.5 nJ, and the SEU cross-sections were correlated positively to the laser’s energy. Multi-bit upsets were measured in heavy-ion and high-energy laser irradiation. Moreover, latch-up and functional interrupt phenomena were common, especially in the heavy-ion tests. The single event effect results for the 16 nm FinFET process were significant, and some radiation tolerance strategies were required in a radiation environment.

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Effect of Swift Heavy Ions on Pulsed Laser Deposited Ag Doped CdS Nanocrystalline Thin Films

Advanced Science Letters ◽

10.1166/asl.2014.5456 ◽

2014 ◽

Vol 20 (5) ◽

pp. 977-983 ◽

Cited By ~ 6

Author(s):

Pragati Kumar ◽

Nupur Saxena ◽

Vinay Gupta ◽

Kun Gao ◽

Fouran Singh ◽

...

Keyword(s):

Thin Films ◽

Heavy Ions ◽

Pulsed Laser ◽

Swift Heavy Ions ◽

Nanocrystalline Thin Films

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The Observation of Electrical Hysteric Behavior in Synthesized V2O5Nanoplates by Recrystallization

Journal of Nanomaterials ◽

10.1155/2013/807895 ◽

2013 ◽

Vol 2013 ◽

pp. 1-7 ◽

Cited By ~ 3

Author(s):

Chang-Hee Kim ◽

Yong Ju Yun ◽

Byung Hoon Kim ◽

Won G. Hong ◽

Yark Yeon Kim ◽

...

Keyword(s):

Electron Microscopy ◽

Annealing Temperature ◽

Electrical Conductance ◽

Anomalous Behavior ◽

Physical Analysis ◽

Scanning Calorimetry ◽

Transmission Electron ◽

Analysis Technique ◽

Voltage Dependent ◽

Current Characteristics

The anomalous electrical conductance for the V2O5foam synthesized via a foaming process was measured. In the annealing process, the synthesized V2O5foam is recrystallized with the increase of annealing temperature. The recrystallization procedure was characterized by using physical analysis tools such as thermogravimetric analysis (TGA), differential scanning calorimetry (DSC), scanning electron microscopy (SEM), high-resolution transmission electron microscopy (HRTEM), and X-ray diffractometer. In the electrical analysis technique of current-voltage characteristics as a function of annealing temperature, an anomalous hysteric behavior appears at the annealing temperature of 400°C. We conclude that the recrystallization of V2O5nanoplates results in the anomalous behavior in voltage-dependent current characteristics.

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