scholarly journals SEE Sensitivity Evaluation for Commercial 16 nm SRAM-FPGA

Electronics ◽  
2019 ◽  
Vol 8 (12) ◽  
pp. 1531 ◽  
Author(s):  
Chang Cai ◽  
Shuai Gao ◽  
Peixiong Zhao ◽  
Jian Yu ◽  
Kai Zhao ◽  
...  
Keyword(s):  
Integrated Circuits ◽  
Cross Sections ◽  
Radiation Effects ◽  
Large Scale ◽  
Random Access ◽  
Radiation Sensitivity ◽  
Heavy Ion ◽  
High Energy ◽  
Radiation Environment ◽  
Single Event

Radiation effects can induce severe and diverse soft errors in digital circuits and systems. A Xilinx commercial 16 nm FinFET static random-access memory (SRAM)-based field-programmable gate array (FPGA) was selected to evaluate the radiation sensitivity and promote the space application of FinFET ultra large-scale integrated circuits (ULSI). Picosecond pulsed laser and high energy heavy ions were employed for irradiation. Before the tests, SRAM-based configure RAMs (CRAMs) were initialized and configured. The 100% embedded block RAMs (BRAMs) were utilized based on the Vivado implementation of the compiled hardware description language. No hard error was observed in both the laser and heavy-ion test. The thresholds for laser-induced single event upset (SEU) were ~3.5 nJ, and the SEU cross-sections were correlated positively to the laser’s energy. Multi-bit upsets were measured in heavy-ion and high-energy laser irradiation. Moreover, latch-up and functional interrupt phenomena were common, especially in the heavy-ion tests. The single event effect results for the 16 nm FinFET process were significant, and some radiation tolerance strategies were required in a radiation environment.

scholarly journals Investigation of Heavy-Ion Induced Single-Event Transient in 28 nm Bulk Inverter Chain

Symmetry ◽  
2020 ◽  
Vol 12 (4) ◽  
pp. 624
Author(s):  
Anquan Wu ◽  
Bin Liang ◽  
Yaqing Chi ◽  
Zhenyu Wu
Keyword(s):  
Integrated Circuits ◽  
Heavy Ions ◽  
Heavy Ion ◽  
High Energy ◽  
Advanced Technology ◽  
Sensitive Volume ◽  
Single Event ◽  
Space Applications ◽  
Order Of Magnitude ◽  
28 Nm

The reliability of integrated circuits under advanced process nodes is facing more severe challenges. Single-event transients (SET) are an important cause of soft errors in space applications. The SET caused by heavy ions in the 28 nm bulk silicon inverter chains was studied. A test chip with good symmetry layout design was fabricated based on the 28 nm process, and the chip was struck by using 5 kinds of heavy ions with different linear energy transfer (LET) values on heavy-ion accelerator. The research results show that in advanced technology, smaller sensitive volume makes SET cross-section measured at 28 nm smaller than 65 nm by an order of magnitude, the lower critical charge required to generate SET will increase the reliability threat of low-energy ions to the circuit, and high-energy ions are more likely to cause single-event multiple transient (SEMT), which cannot be ignored in practical circuits. The transients pulse width data can be used as a reference for SET modeling in complex circuits.

scholarly journals Evaluation Method of Heavy-Ion-Induced Single-Event Upset in 3D-Stacked SRAMs

Electronics ◽  
2020 ◽  
Vol 9 (8) ◽  
pp. 1230
Author(s):  
Peixiong Zhao ◽  
Tianqi Liu ◽  
Chang Cai ◽  
Ze He ◽  
Dongqing Li ◽  
...  
Keyword(s):  
Cross Sections ◽  
Evaluation Method ◽  
Ion Irradiation ◽  
Three Dimensional ◽  
Random Access ◽  
Cosmic Ray ◽  
Heavy Ion ◽  
Ultrahigh Energy ◽  
Single Event ◽  
Heavy Ion Irradiation

The interaction of radiation with three-dimensional (3D) electronic devices can be determined through the detection of single-event effects (SEU). In this study, we propose a method for the evaluation of SEUs in 3D static random-access memories (SRAMs) induced by heavy-ion irradiation. The cross-sections (CSs) of different tiers, as a function of the linear energy transfer (LET) under high, medium, and low energy heavy-ion irradiation, were obtained through Monte Carlo simulations. The simulation results revealed that the maximum value of the CS was obtained under the medium-energy heavy-ion penetration, and the effect of penetration range of heavy ions was observed in different tiers of 3D-stacked devices. The underlying physical mechanisms of charge collection under different heavy-ion energies were discussed. Thereafter, we proposed an equation of the critical heavy-ion range that can be used to obtain the worst CS curve was proposed. Considering both the LET spectra and flux of galactic cosmic ray (GCR) and the variation in the heavy-ion Bragg peak values with the atomic number, we proposed a heavy-ion irradiation test guidance for 3D-stacked devices. In addition, the effectiveness of this method was verified through simulations of the three-tier vertically stacked SRAM and the ultrahigh-energy heavy-ion irradiation experiment of the two-tier vertically stacked SRAM. this study provides a theoretical framework for the detection of SEUs induced by heavy-ion irradiation in 3D-integrated devices.

scholarly journals TSV Technology and High-Energy Heavy Ions Radiation Impact Review

Electronics ◽  
2018 ◽  
Vol 7 (7) ◽  
pp. 112 ◽  
Author(s):  
Wenchao Tian ◽  
Tianran Ma ◽  
Xiaohan Liu
Keyword(s):  
Integrated Circuits ◽  
Research Methods ◽  
Heavy Ions ◽  
High Performance ◽  
Ion Irradiation ◽  
Low Cost ◽  
Three Dimensional ◽  
Heavy Ion ◽  
High Energy ◽  
Radiation Environment

Three-dimensional integrated circuits (3D IC) based on TSV (Through Silicon Via) technology is the latest packaging technology with the smallest size and quality. As a result, it can effectively reduce parasitic effects, improve work efficiency, reduce the power consumption of the chip, and so on. TSV-based silicon interposers have been applied in the ground environment. In order to meet the miniaturization, high performance and low-cost requirements of aerospace equipment, the adapter substrate is a better choice. However, the transfer substrate, as an important part of 3D integrated circuits, may accumulate charge due to heavy ion irradiation and further reduce the performance of the entire chip package in harsh space radiation environment or cause it to fail completely. Little research has been carried out until now. This article summarizes the research methods and conclusions of the research on silicon interposers and TSV technology in recent years, as well as the influence of high-energy heavy ions on semiconductor devices. Based on this, a series of research methods to study the effect of high-energy heavy ions on TSV and silicon adapter plates is proposed.

scholarly journals SINGLE-EVENT HANBURY-BROWN–TWISS INTERFEROMETRY

2007 ◽  
Vol 16 (10) ◽  
pp. 3271-3279 ◽  
Author(s):  
CHEUK-YIN WONG ◽  
WEI-NING ZHANG
Keyword(s):  
Heavy Ion Collisions ◽  
Large Scale ◽  
Heavy Ion ◽  
High Energy ◽  
Density Fluctuations ◽  
Spatial Density ◽  
Single Event ◽  
Central Collisions ◽  
Ion Collisions ◽  
Many Sources

Large spatial density fluctuations in high energy heavy-ion collisions can come from many sources: initial transverse density fluctuations, non-central collisions, phase transitions, surface tension, and fragmentations. The common presence of some of these sources in high energy heavy-ion collisions suggests that large scale density fluctuations may often occur. The detection of large density fluctuations by single-event Hanbury-Brown–Twiss interferometry in heavy-ion collisions will provide useful information on density fluctuations and the dynamics of heavy-ion collisions.

Radiation Effects on Integrated Circuits Used in High Energy Research

1990 ◽  
pp. 527-531
Author(s):  
Alvin S. Kanofsky ◽  
Bert Yost ◽  
Werner Farr
Keyword(s):  
Integrated Circuits ◽  
Radiation Effects ◽  
High Energy ◽  
Energy Research

scholarly journals Application of Radiation-Thermal Treatment to Suppress Sensitivity of Silicon Microcircuits to Single Radiation Effects

2021 ◽  
Vol 8 (3) ◽  
pp. 99-103
Author(s):  
P. B. Lagov ◽  
◽  
A. S. Drenin ◽  
A. A. Meshcheryakov ◽  
N. A. Yudanov ◽  
...  
Keyword(s):  
Thermal Treatment ◽  
Integrated Circuits ◽  
Radiation Effects ◽  
Experimental Tests ◽  
High Energy ◽  
Particle Accelerators ◽  
Transfer Coefficients ◽  
Heavy Charged Particles ◽  
Equilibrium Charge ◽  
Technological Tool

The paper analyses the possibility to reduce the sensitivity of silicon integrated circuits (ICs) to single radiation effects by means of radiation-thermal treatment including irradiation in charged particle accelerators and subsequent low-temperature heat treatment. It is shown that reduction in sensitivity to single radiation effects is provided by formation of thermostable recombination centers in semiconductor IC structure in necessary concentrations. At the same time a decrease in primary photocurrent generated by heavy charged particles or high-energy protons, reduction in transfer coefficients of parasitic bipolar transistors forming thyristor structures, reduction in carrier avalanche multiplication coefficients at high electric field strengths can be provided. Radiationthermal treatment can be introduced in the manufacturing process of ICs of various classes at the end of the manufacturing cycle and does not require correction of the basic technology. A possible undesirable growth of inverse currents and preservation of values of other electrical parameters within acceptable values when using radiation-thermal treatment is provided by choosing optimal modes of irradiation and annealing which are established in the course of experimental tests. The calculated evaluation has shown that using radiation-thermal treatment in the technology of IC fabrication can provide a decrease in the effective collection length of non-equilibrium charge carriers generated under the influence of single radiation effects by at least 10 times which allows considering radiation-thermal treatment as an effective technological tool to suppress the sensitivity to single radiation effects.

scholarly journals Impact of Energy Dependence on Ground Level and Avionic SEE Rate Prediction When Applying Standard Test Procedures

Aerospace ◽  
2019 ◽  
Vol 6 (11) ◽  
pp. 119
Author(s):  
Matteo Cecchetto ◽  
Rubén García Alía ◽  
Frédéric Wrobel
Keyword(s):  
Cross Sections ◽  
Random Access ◽  
Ground Level ◽  
High Energy ◽  
Standard Test ◽  
Fissile Material ◽  
Test Procedures ◽  
Relative Contribution ◽  
Standard Procedures ◽  
Commercial Flight

Single event effects (SEEs) in ground level and avionic applications are mainly induced by neutrons and protons, of which the relative contribution of the latter is larger with increasing altitude. Currently, there are two main applicable standards—JEDEC JESD89A for ground level and IEC 62396 for avionics—that address the procedure for testing and qualifying electronics for these environments. In this work, we extracted terrestrial spectra at different altitudes from simulations and compared them with data available from the standards. Second, we computed the SEE rate using different approaches for three static random access memory (SRAM) types, which present a strong SEE response dependence with energy. Due to the presence of tungsten, a fissile material when interacting with high energy hadrons, the neutron and proton SEE cross sections do not saturate after 200 MeV, but still increase up to several GeV. For these memories, we found standard procedures could underestimate the SEE rate by a factor of up to 4-even in ground level applications—and up to 12 times at 12 km. Moreover, for such memories, the contribution from high energy protons is able to play a significant role, comparable to that of neutrons, even at commercial flight altitudes, and greater at higher altitudes.

scholarly journals Influence of Orbital Parameters on SEU Rate of Low-Energy Proton in Nano-SRAM Device

Symmetry ◽  
2020 ◽  
Vol 12 (12) ◽  
pp. 2030
Author(s):  
Bing Ye ◽  
Li-Hua Mo ◽  
Tao Liu ◽  
You-Mei Sun ◽  
Jie Liu
Keyword(s):  
Heavy Ion ◽  
High Energy ◽  
Low Energy ◽  
Single Event Upset ◽  
Single Event ◽  
High Energy Proton ◽  
Orbital Parameters ◽  
Energy Proton ◽  
Orbital Height ◽  
Selection Of

The on-orbit single-event upset (SEU) rate of nanodevices is closely related to the orbital parameters. In this paper, the on-orbit SEU rate (OOSR) induced by a heavy ion (HI), high-energy proton (HEP) and low-energy proton (LEP) for a 65 nm SRAM device is calculated by using the software SPACE RADIATION under different orbits based on the experimental data. The results indicate that the OOSR induced by the HI, HEP and LEP varies with the orbital parameters. In particular, the orbital height, inclination and shieling thickness are the key parameters that affect the contribution of the LEP to the total OOSR. Our results provide guidance for the selection of nanodevices on different orbits.

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