Study on Effect of Electron Beam Irradiation in SEM-Based Nanoprobing on MOS Transistor

2016 ◽  
Author(s):  
Hara Noriko ◽  
Bito Nanami ◽  
Ebisuda Mai ◽  
Tabata Suguru ◽  
Numazaki Naoki ◽  
...  
Keyword(s):  
Electron Beam ◽  
Failure Analysis ◽  
Oxide Layer ◽  
Electron Beam Irradiation ◽  
Gate Oxide ◽  
Mos Transistors ◽  
Beam Irradiation ◽  
Mos Transistor ◽  
Significant Change ◽  
Iv Curves

Abstract Nanoprobing is an indispensable method for failure analysis to identify failure cells and to approach the root causes, providing electric characteristics of the failure of the MOS transistor. In this paper, the characteristic degradation on MOS transistors with SEM-based nanoprobing is studied to find out the critical accelerating voltage, comparing it to the characteristic obtained by the mechanical prober. In this experiment, n-type MOS transistors with thick gate oxide layer (40nm) were used. The effect of electron beam irradiation was also investigated. Significant change was not observed in n+(drain)/p-well IV curves. The paper looks at the influence of the additional phenomena during SEM-based nanoprobing analysis on a characteristics change of a specimen. For MOS transistor with thick gate oxide used in this study, irradiation influence is possibly more notable than normal voltage cell cases.

scholarly journals In-Situ Growth of Passivation Oxide Layer on Fe-Nanoparticle under Electron-Beam Irradiation in a TEM

2006 ◽  
Vol 12 (S02) ◽  
pp. 546-547
Author(s):  
CM Wang ◽  
DR Baer ◽  
JE Amonette ◽  
MH Engelhard ◽  
JJ Antony ◽  
...  
Keyword(s):  
Electron Beam ◽  
Oxide Layer ◽  
Electron Beam Irradiation ◽  
In Situ Growth ◽  
Beam Irradiation

Extended abstract of a paper presented at Microscopy and Microanalysis 2006 in Chicago, Illinois, USA, July 30 – August 3, 2005

Electron-beam irradiation-induced gate oxide degradation

2000 ◽  
Vol 88 (11) ◽  
pp. 6731-6735 ◽  
Author(s):  
Byung Jin Cho ◽  
Pei Fen Chong ◽  
Eng Fong Chor ◽  
Moon Sig Joo ◽  
In Seok Yeo
Keyword(s):  
Electron Beam ◽  
Electron Beam Irradiation ◽  
Gate Oxide ◽  
Beam Irradiation ◽  
Oxide Degradation

ESD Failure Analysis and Robustness Design in Vertical-Diffused MOS Transistors

2014 ◽  
Vol 926-930 ◽  
pp. 456-461
Author(s):  
Shen Li Chen ◽  
Wen Ming Lee ◽  
Chi Ling Chu
Keyword(s):  
Failure Analysis ◽  
Oxide Layer ◽  
Failure Mode ◽  
Epitaxial Layer ◽  
Gate Oxide ◽  
The Other ◽  
Mos Transistors ◽  
Oxide Breakdown ◽  
Analysis Techniques ◽  
Silicon Epitaxial Layer

This paper deals with a detailed study of ESD failure mode and how to strengthen of the VDMOS used for power applications. The ESD post-zapped failure of power VDMOS transistors due to HBM, MM, and CDM stresses are examined in this work. Through standard failure analysis techniques by using EMMI and SEM were applied to identify the failure locations. The MM failure mode in this power MOSFET was caused by the gate oxide breakdown near n+ region in the source end as an ESD zapping. And, the ESD failure damage under HBM and CDM stresses were caused by the gate material molten near the gate pad and tunneled through the oxide layer into silicon epitaxial layer. Furthermore, the ESD robustness designs of power VDMOS transistors are also addressed in this work. The first ESD incorporated design is Zener diodes back-to-back clamping the gate-to-source pad, and on the other hand, another one excellent design contains two Zener diodes clamping the gate-to-source and gate-to-drain terminals of a VDMOS, respectively.

Methods to Monitor and Improve the Performance of Specimen Holders for Transmission Electron Cryomicroscopy

1996 ◽  
Vol 54 ◽  
pp. 454-455
Author(s):  
B. L. Armbruster ◽  
B. Kraus ◽  
M. Pan
Keyword(s):  
Electron Microscopy ◽  
Electron Beam ◽  
Electron Beam Irradiation ◽  
Beam Irradiation ◽  
Quality Of Data ◽  
Electron Cryomicroscopy ◽  
Thermal Equilibration ◽  
Transmission Electron ◽  
Electron Microscopes

One goal in electron microscopy of biological specimens is to improve the quality of data to equal the resolution capabilities of modem transmission electron microscopes. Radiation damage and beam- induced movement caused by charging of the sample, low image contrast at high resolution, and sensitivity to external vibration and drift in side entry specimen holders limit the effective resolution one can achieve. Several methods have been developed to address these limitations: cryomethods are widely employed to preserve and stabilize specimens against some of the adverse effects of the vacuum and electron beam irradiation, spot-scan imaging reduces charging and associated beam-induced movement, and energy-filtered imaging removes the “fog” caused by inelastic scattering of electrons which is particularly pronounced in thick specimens.Although most cryoholders can easily achieve a 3.4Å resolution specification, information perpendicular to the goniometer axis may be degraded due to vibration. Absolute drift after mechanical and thermal equilibration as well as drift after movement of a holder may cause loss of resolution in any direction.

A Study of Electron Beam Irradiation Influence on Device Contact Junction Characteristics of Advanced DRAM Using Atomic Force Probing

2013 ◽  
Author(s):  
Wei-Chih Wang ◽  
Jian-Shing Luo
Keyword(s):  
Electron Beam ◽  
Electron Beam Irradiation ◽  
Forward Bias ◽  
Irradiation Damage ◽  
Beam Irradiation ◽  
Excess Current ◽  
Atomic Force ◽  
Order Of Magnitude ◽  
Voltage Contrast ◽  
Acceleration Voltage

Abstract In this paper, we revealed p+/n-well and n+/p-well junction characteristic changes caused by electron beam (EB) irradiation. Most importantly, we found a device contact side junction characteristic is relatively sensitive to EB irradiation than its whole device characteristic; an order of magnitude excess current appears at low forward bias region after 1kV EB acceleration voltage irradiation (Vacc). Furthermore, these changes were well interpreted by our Monte Carlo simulation results, the Shockley-Read Hall (SRH) model and the Generation-Recombination (G-R) center trap theory. In addition, four essential examining items were suggested and proposed for EB irradiation damage origins investigation and evaluation. Finally, by taking advantage of the excess current phenomenon, a scanning electron microscope (SEM) passive voltage contrast (PVC) fault localization application at n-FET region was also demonstrated.

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