scholarly journals Hyperuniform disordered waveguides and devices for near infrared silicon photonics

2019 ◽  
Vol 9 (1) ◽  
Author(s):  
Milan M. Milošević ◽  
Weining Man ◽  
Geev Nahal ◽  
Paul J. Steinhardt ◽  
Salvatore Torquato ◽  
...  
Keyword(s):  
Integrated Circuit ◽  
Silicon Photonics ◽  
Near Infrared ◽  
Integrated Design ◽  
Temperature Stability ◽  
Photonic Devices ◽  
Silicon On Insulator ◽  
Optical Modulator ◽  
Photonic Band ◽  
Photonics Devices

AbstractWe introduce a hyperuniform-disordered platform for the realization of near-infrared photonic devices on a silicon-on-insulator platform, demonstrating the functionality of these structures in a flexible silicon photonics integrated circuit platform unconstrained by crystalline symmetries. The designs proposed advantageously leverage the large, complete, and isotropic photonic band gaps provided by hyperuniform disordered structures. An integrated design for a compact, sub-volt, sub-fJ/bit, hyperuniform-clad, electrically controlled resonant optical modulator suitable for fabrication in the silicon photonics ecosystem is presented along with simulation results. We also report results for passive device elements, including waveguides and resonators, which are seamlessly integrated with conventional silicon-on-insulator strip waveguides and vertical couplers. We show that the hyperuniform-disordered platform enables improved compactness, enhanced energy efficiency, and better temperature stability compared to the silicon photonics devices based on rib and strip waveguides.

Design and characteristics of reflectivity tunable mirror with MZI and loop waveguide on SOI

2021 ◽  
Author(s):  
Yutaka Makihara ◽  
Moataz Eissa ◽  
Tomohiro AMEMIYA ◽  
Nobuhiko Nishiyama
Keyword(s):  
Phase Shift ◽  
Coupling Coefficient ◽  
Integrated Circuit ◽  
Silicon Photonics ◽  
Silicon On Insulator ◽  
Zehnder Interferometer ◽  
Directional Couplers ◽  
Photonic Integrated Circuit ◽  
Active Elements ◽  
Measurement Results

Abstract To achieve a reconfigurable photonic integrated circuit with active elements, we proposed a reflectivity tunable mirror constructed using a Mach–Zehnder interferometer (MZI) with a micro heater and loop waveguide on a silicon photonics platform. In this paper, the principle of the operation, design, fabrication, and measurement results of the mirror are presented. In theory, the phase shift dependence of the mirror relies on the coupling coefficient of the directional couplers of the MZI. When the coupling coefficient κ2 was 0.5 and 0.15, the reflection could be turned on and off with a phase shift of π/2 and π, respectively. The reflection power of the fabricated mirror on the silicon on insulator (SOI) substrate was changed by more than 20 dB by a phase shift. In addition, it was demonstrated that the phase shift dependence of the mirror changes with the coupling coefficient of the fabricated devices.

scholarly journals Ultra-broadband silicon photonics devices based on subwavelength metamaterials -INVITED

2020 ◽  
Vol 238 ◽  
pp. 01002
Author(s):  
A. V. Velasco ◽  
D. González-Andrade ◽  
A. Herrero-Bermello ◽  
J. M. Luque-González ◽  
R. Halir ◽  
...  
Keyword(s):  
Optical Properties ◽  
Silicon Photonics ◽  
Building Blocks ◽  
Photonic Devices ◽  
Phase Shifters ◽  
Beam Splitters ◽  
Wide Range ◽  
Recent Developments ◽  
Photonics Devices

Subwavelength structured waveguides provide tailorable optical properties that can be leveraged to overcome bandwidth limitations in a wide range of photonic devices. In this invited talk, we present an overview of recent developments on subwavelength engineered building blocks, including phase shifters, mode multiplexers, polarization beam splitters and zero-birefringence waveguides.

(Invited) High-Performance Si Optical Modulator and Ge Photodetector and Their Application to Silicon Photonics Integrated Circuit

2018 ◽  
Vol 86 (7) ◽  
pp. 17-25 ◽  
Author(s):  
Junichi Fujikata ◽  
Shigeki Takahashi ◽  
Tohru Mogami ◽  
Kazuhiko Kurata ◽  
Mitsuru Takenaka ◽  
...  
Keyword(s):  
Integrated Circuit ◽  
Silicon Photonics ◽  
High Performance ◽  
Optical Modulator

scholarly journals A Review on Terahertz Technologies Accelerated by Silicon Photonics

Nanomaterials ◽  
2021 ◽  
Vol 11 (7) ◽  
pp. 1646
Author(s):  
Jingya Xie ◽  
Wangcheng Ye ◽  
Linjie Zhou ◽  
Xuguang Guo ◽  
Xiaofei Zang ◽  
...  
Keyword(s):  
Integrated Circuit ◽  
Silicon Photonics ◽  
Large Scale ◽  
Cost Effective ◽  
Single Chip ◽  
Photonic Integrated Circuit ◽  
Hybrid Silicon ◽  
The Cost ◽  
Silicon Based ◽  
Thz Applications

In the last couple of decades, terahertz (THz) technologies, which lie in the frequency gap between the infrared and microwaves, have been greatly enhanced and investigated due to possible opportunities in a plethora of THz applications, such as imaging, security, and wireless communications. Photonics has led the way to the generation, modulation, and detection of THz waves such as the photomixing technique. In tandem with these investigations, researchers have been exploring ways to use silicon photonics technologies for THz applications to leverage the cost-effective large-scale fabrication and integration opportunities that it would enable. Although silicon photonics has enabled the implementation of a large number of optical components for practical use, for THz integrated systems, we still face several challenges associated with high-quality hybrid silicon lasers, conversion efficiency, device integration, and fabrication. This paper provides an overview of recent progress in THz technologies based on silicon photonics or hybrid silicon photonics, including THz generation, detection, phase modulation, intensity modulation, and passive components. As silicon-based electronic and photonic circuits are further approaching THz frequencies, one single chip with electronics, photonics, and THz functions seems inevitable, resulting in the ultimate dream of a THz electronic–photonic integrated circuit.

scholarly journals Temperature Characteristics of a Contour Mode MEMS AlN Piezoelectric Ring Resonator on SOI Substrate

Micromachines ◽  
2021 ◽  
Vol 12 (2) ◽  
pp. 143
Author(s):  
Sitao Fei ◽  
Hao Ren
Keyword(s):  
Quality Factor ◽  
Bottom Electrode ◽  
Temperature Stability ◽  
Cryogenic Cooling ◽  
Silicon On Insulator ◽  
Temperature Hysteresis ◽  
Sensing Applications ◽  
Doped Silicon ◽  
Heavily Doped ◽  
Contour Mode

As a result of their IC compatibility, high acoustic velocity, and high thermal conductivity, aluminum nitride (AlN) resonators have been studied extensively over the past two decades, and widely implemented for radio frequency (RF) and sensing applications. However, the temperature coefficient of frequency (TCF) of AlN is −25 ppm/°C, which is high and limits its RF and sensing application. In contrast, the TCF of heavily doped silicon is significantly lower than the TCF of AlN. As a result, this study uses an AlN contour mode ring type resonator with heavily doped silicon as its bottom electrode in order to reduce the TCF of an AlN resonator. A simple microfabrication process based on Silicon-on-Insulator (SOI) is presented. A thickness ratio of 20:1 was chosen for the silicon bottom electrode to the AlN layer in order to make the TCF of the resonator mainly dependent upon heavily doped silicon. A cryogenic cooling test down to 77 K and heating test up to 400 K showed that the resonant frequency of the AlN resonator changed linearly with temperature change; the TCF was shown to be −9.1 ppm/°C. The temperature hysteresis characteristic of the resonator was also measured, and the AlN resonator showed excellent temperature stability. The quality factor versus temperature characteristic was also studied between 77 K and 400 K. It was found that lower temperature resulted in a higher quality factor, and the quality factor increased by 56.43%, from 1291.4 at 300 K to 2020.2 at 77 K.

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