scholarly journals Effects of Anode Design and Configuration on the Growth Dynamics and Surface Morphologies of Electrodeposited Copper Films

2021 ◽  
Vol 3 (1) ◽  
pp. 22-29
Author(s):  
Choo Kan Yeep ◽  
Lim E Lin ◽  
Ong Duu Sheng ◽  
You Ah Heng
Keyword(s):  
Copper Ions ◽  
Copper Film ◽  
Growth Dynamics ◽  
Transient Current ◽  
Uniform Electric Field ◽  
Copper Films ◽  
Sem Images ◽  
Field Patterns ◽  
Progressive Growth ◽  
Surface Morphologies

The influence of different anode configurations on the growth mechanisms, transient currentsand surface morphologies of copper film using localized electrodeposition technique have been studied. Measured transient currents during electrodeposition wereused to investigate the underlying growth dynamics. SEM images were obtained and the surface morphologies of the deposited copper films were analyzed. It was found that the transient current increased when copper ions were able to grow directly on the empty surface of the copper film that was located away from the mini electrodes. This caused the copper ions to be deposited sporadically via the instantaneous growth mechanism and formed cluster of atoms on the empty surface of the copper film which led to rougher surfaces. In contrast, progressive growth was observed to occur at a faster rate for thedeposition performed using insulated mini electrodes, especially in the case of collinear double insulated mini electrodes as indicated by the reduction of the transient current with time. Besides, copper films with uniform and smoother surfaces were obtained when the depositions were performed using multiple or a large number of closely spaced mini electrodes. This was due to the fact that large number of closely spaced mini electrodes produced parallel and uniform electric field patterns.

Adhesion mechanisms of copper films deposited onto laser-irradiated alumina

1997 ◽  
Vol 12 (11) ◽  
pp. 3174-3181 ◽  
Author(s):  
Jae-Won Park ◽  
Anthony J. Pedraza ◽  
Douglas H. Lowndes ◽  
William R. Allen
Keyword(s):  
Laser Irradiation ◽  
Copper Film ◽  
Alumina Substrate ◽  
Interfacial Region ◽  
Transitional Region ◽  
Copper Films ◽  
High Adhesion ◽  
Strong Adhesion ◽  
Oxygen Excess ◽  
Higher Temperature

Strong adhesion between a deposited copper film and an alumina substrate takes place when the substrate is laser-irradiated prior to deposition. A post-deposition annealing is required to achieve the strong bonding. In this work, the interfacial region between the copper film and the alumina substrate was analyzed using Auger Electron Spectroscopy (AES). It was found that a transitional region is always present in couples that have a high adhesion strength, while little or no transitional region was found in weakly bonded couples. The transitional region depends on the laser irradiation atmosphere. In the case of laser irradiation in air, oxygen excess was found on the surface of the alumina substrate, and in the copper/alumina couple the transitional region consists of a copper oxide and a Cu–Al double oxide. When the laser irradiation was performed in a reducing atmosphere (Ar–4% H2), substoichiometric alumina and metallic aluminum were found on the surface of the substrate and also a reaction between copper and the substoichiometric aluminum oxide was detected in the subsurface. Although the substoichiometric alumina is formed on the surface irradiated in Ar–4% H2, a stable Al2O3 thin layer is formed on the outmost surface because the irradiated substrate is exposed to the atmosphere before deposition. This reoxidized layer remains whole at the interface of the couple upon low temperature (at least up to 300 °C) annealing, while it is ruptured upon higher temperature annealing (500 °C in this work). In the latter case, the copper film can contact and react with the substoichiometric alumina formed in the subsurface of the substrate irradiated in the Ar–4% H2 atmosphere. It is concluded that the Cu–Al–O interfacial compound formed in the transitional region causes the strong adhesion between the copper film and the alumina substrate.

Constitutive Response of Passivated Copper Films: Experiments and Analyses

2001 ◽  
Vol 695 ◽  
Author(s):  
Y.-L. Shen ◽  
U. Ramamurty
Keyword(s):  
Thermal Loading ◽  
Silicon Oxide ◽  
Kinematic Hardening ◽  
Copper Film ◽  
Temperature Response ◽  
Copper Interconnects ◽  
Constitutive Law ◽  
Copper Films ◽  
Rate Dependent ◽  
Constitutive Response

ABSTRACTThe constitutive behavior of passivated copper films is studied. Stresses in copper films of thickness ranging from 1000 nm to 40 nm, passivated with silicon oxide on a quartz or silicon substrate, were measured using the curvature method. The thermal cycling spans a temperature range from - 196 to 600°C. It is seen that the strong relaxation at high temperatures normally found in unpassivated films is nonexistent for passivated films. The copper film did not show any rate-dependent effect over a range of heating/cooling rate from 5 to 25°C/min. Further analyses showed that significant strain hardening exists during the course of thermal loading. In particular, the measured stress- temperature response can only be fitted with a kinematic hardening model, if a simple constitutive law within the continuum plasticity framework is to be used. The analytic procedures for extracting the film properties are presented. Implications to stress modeling of copper interconnects in actual devices are discussed.

Thermomechanical Stresses in Copper Films at Elevated Temperature

2010 ◽  
Vol 2010 (HITEC) ◽  
pp. 000129-000135 ◽  
Author(s):  
Martin Lederer ◽  
Javad Zarbakhsh ◽  
Rui Huang ◽  
Thomas Detzel ◽  
Brigitte Weiss
Keyword(s):  
Elevated Temperature ◽  
Thermal Cycling ◽  
Copper Film ◽  
Film Stress ◽  
Elastic Response ◽  
Copper Films ◽  
Thermomechanical Stress ◽  
Wafer Curvature ◽  
Electronic Parts ◽  
Stoney Formula

Thermomechanical stresses in metallic films are a root cause for material fatigue which limits the lifetime of electronic devices. Since the yield stress of metals is temperature dependent, plastic deformations during thermal cycling are increased at elevated temperature. This effect reduces the reliability of electronic parts. In order to investigate this problem, a 20μm thick copper film was deposited on a silicon wafer. After annealing at 400°C, the sample was exposed to thermal cycles in the temperature range between room temperature and 600°C. The different values for the CTE of copper and silicon lead to a curvature of the sample. The wafer curvature was measured by a multi-laser beam method. On the basis of the experimental results, a new theoretical model was developed, which describes the stress evolution in the film during thermal cycling. In this investigation, the relation between wafer curvature and film stress is calculated by analogy to a model by Freund [1] which is an improvement to the well known Stoney formula. In addition to the elastic response, the new model considers plasticity of the copper film as well as temperature dependence of creep. It is demonstrated that the model can well describe the experiment and thus thermomechanical stress in copper films.

Room Temperature Self-Annealing of Electroplated and Sputtered Copper Films

1999 ◽  
Vol 562 ◽  
Author(s):  
Michelle Chen ◽  
Suraj Rengarajan ◽  
Peter Hey ◽  
Yezdi Dordi ◽  
Hong Zhang ◽  
...  
Keyword(s):  
Electron Microscopy ◽  
Room Temperature ◽  
Copper Film ◽  
Copper Films ◽  
Organic Additives ◽  
X Ray Diffraction ◽  
X Ray ◽  
Transmission Electron ◽  
Electroplated Copper ◽  
Effect Of Copper

ABSTRACTSelf-annealing properties of electroplated and sputtered copper films at room temperature were investigated in this study, in particular, the effect of copper film thickness, electrolyte systems used, as well as their level of organic additives for electroplating. Real-time grain growth was observed by transmission electron microscopy. Sheet resistance and X-ray diffraction measurements further confirmed the recrystallization of the electroplated copper film with time. The recrystallization of electroplated films was then compared with that of sputtered copper films.

Photonic Curing of Copper Ink Films on Liquid Crystal Polymer Substrate

MRS Advances ◽  
2020 ◽  
Vol 5 (42) ◽  
pp. 2191-2199 ◽  
Author(s):  
Andrew Luce ◽  
Guinevere Strack ◽  
Oshadha Ranasingha ◽  
Edward Kingsely ◽  
Craig Armiento ◽  
...  
Keyword(s):  
Liquid Crystal ◽  
Energy Density ◽  
Copper Film ◽  
High Energy ◽  
Liquid Crystal Polymer ◽  
High Energy Density ◽  
Ambient Conditions ◽  
Sem Images ◽  
Total Energy Density ◽  
Crystal Polymer

AbstractThe application of intense pulsed light (IPL) to printed copper nanoparticle (CuNP) films enables rapid curing on low temperature substrates in ambient conditions. In this work, we printed CuNP ink on liquid crystal polymer (LCP; Vectra A resin) and then cured the films using a high energy density light pulse. High-resolution SEM images of the cured films revealed that the CuNPs on LCP were fused together. Optimal curing parameters were a 5 ms pulse, 75% duty cycle, and an energy density range of 4.2–5.2 J⋅cm-2. Sheet resistance, Rs, values as low as ~0.1 Ω⋅sq-1were obtained. The LCP substrate took on a yellowed appearance after the application of five pulses and exhibited a surface free energy increase. A filter that blocked wavelengths <450 nm was placed over the printed copper film on LCP. As expected, the presence of the filter decreased the total energy density and produced a cured film with high Rs; however, when the energy density was increased in the presence of the filter, the Rs remained high (0.95 Ω⋅sq-1). This preliminary work indicates that additional studies are required not only to understand low thermal budget curing on LCP, but also to elucidate the properties of substrates that enable low Rs.

COPPER PLATING FROM NON-CYANIDE ALKALINE BATHS

2014 ◽  
Vol 21 (01) ◽  
pp. 1450009
Author(s):  
MINGGANG LI ◽  
GUOYING WEI ◽  
JIANFANG WANG ◽  
MENG LI ◽  
XIXI ZHAO ◽  
...  
Keyword(s):  
Thin Films ◽  
Bath Temperature ◽  
Complexing Agents ◽  
Copper Films ◽  
Higher Temperature ◽  
Alkaline Bath ◽  
Xrd Patterns ◽  
Surface Morphologies ◽  
Alkaline Baths ◽  
Hydrolysis Of

Non-cyanide alkaline bath was used to prepare copper thin films. Influences of various temperatures on deposition rates, surface morphologies and microstructures of films were investigated. Copper thin films prepared from non-cyanide alkaline bath show typical nodular structures. Copper films fabricated at higher temperature possess rough surface due to hydrolysis of complexing agents. According to the XRD patterns, all deposited films were crystalline and showed Cu (111), Cu (200) and Cu (220) peaks. The intensity of peak (200) increases gradually with the rise on bath temperatures. Films with maximum thickness (7.5 μm) could be obtained at the temperature of 40°C. From the cyclic voltammetry curve, it was found that the cathodic polarization decreased slightly with increase of bath temperatures. In addition, when the bath temperature was equal to 50°C, current efficiency could reach to 96.95%.

Copper-Coated Cylindrical Internal Reflection Elements for Investigating Interfacial Phenomena

1986 ◽  
Vol 40 (7) ◽  
pp. 1062-1065 ◽  
Author(s):  
Teiki Iwaoka ◽  
Peter R. Griffiths ◽  
John T. Kitasako ◽  
Gill G. Geesey
Keyword(s):  
Copper Film ◽  
Internal Reflection ◽  
Interfacial Phenomena ◽  
Aqueous Environment ◽  
Copper Films ◽  
Depth Of Penetration ◽  
Exponential Relationship ◽  
Copper Surfaces ◽  
Copper Coatings ◽  
The Stability

Techniques for coating thin copper films on the surface of cylindrical germanium internal reflection elements are described. These films were then characterized in an aqueous environment. The expected exponential relationship between the depth of penetration of the evanescent wave into water and the thickness of the copper film was verified experimentally. The stability of vacuum-deposited copper coatings was strong enough that the internal reflection element could be exposed to an aqueous solution of a polysaccharide for more than 40 h. The weak adhesion of polysaccharides to copper surfaces was studied spectroscopically.

Copper Film Deposition by Hydrogen Atom Reactions with Copper Compounds

1990 ◽  
Vol 203 ◽  
Author(s):  
Hongwen Li ◽  
Robert R. Reeves
Keyword(s):  
Metal Film ◽  
Copper Film ◽  
Film Deposition ◽  
Copper Films ◽  
Hydrogen Atoms ◽  
Good Adhesion ◽  
Metal Compounds ◽  
Copper Compounds ◽  
Substrate Temperatures ◽  
Purity Copper

ABSTRACTA novel low temperature CVD process - atom reaction CVD process for metal film depositions has been developed by using hydrogen atoms reacting with metal compounds. High purity copper films, with low resistivity of ∼ 2 μΩ cm, good step coverage to submicron holes and good adhesion to various substrates, were obtained by using this process with Cu(HFA)2 source at substrate temperatures below 150 °C.

Room Temperature Self-Annealing of Electroplated and Sputtered Copper Films

1999 ◽  
Vol 564 ◽  
Author(s):  
Michelle Chen ◽  
Suraj Rengarajan ◽  
Peter Hey ◽  
Yezdi Dordi ◽  
Hong Zhang ◽  
...  
Keyword(s):  
Electron Microscopy ◽  
Room Temperature ◽  
Copper Film ◽  
Copper Films ◽  
Organic Additives ◽  
X Ray Diffraction ◽  
X Ray ◽  
Transmission Electron ◽  
Electroplated Copper ◽  
Effect Of Copper

AbstractSelf-annealing properties of electroplated and sputtered copper films at room temperature were investigated in this study, in particular, the effect of copper film thickness, electrolyte systems used, as well as their level of organic additives for electroplating. Real-time grain growth was observed by transmission electron microscopy. Sheet resistance and X-ray diffraction measurements further confirmed the recrystallization of the electroplated copper film with time. The recrystallization of electroplated films was then compared with that of sputtered copper films.

The Effects of Copper on the Interfacial Failure of Gold Films

2001 ◽  
Vol 695 ◽  
Author(s):  
N. R. Moody ◽  
D. P. Adams ◽  
M. J. Cordill ◽  
N. Yang ◽  
D. F. Bahr
Keyword(s):  
Copper Alloy ◽  
Copper Film ◽  
Alloy Film ◽  
Solid Solution Hardening ◽  
Nanoindentation Test ◽  
Additional Stress ◽  
Gold Films ◽  
Copper Films ◽  
Solution Hardening ◽  
Fracture Susceptibility

ABSTRACTNanoindentation test techniques were combined with deposition of highly stressed overlayers to study the interfacial fracture susceptibility of gold-on-copper and gold-2w/o-copper alloy films. The gold-on-copper film blistered readily following deposition of stressed tungsten overlayers. Additional stress from nanoindentation was required to trigger delamination and blister formation in the gold-copper alloy film. Fracture energies were then determined using mechanics-based models. The results show that the gold-copper alloy exhibited higher fracture energies than the gold-on-copper films. This increase scaled with film strength suggesting that the higher measured fracture energies in the gold-copper alloy film were due to solid solution hardening.

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